BE752608A - Procede de fabrication d'un dispositif - Google Patents
Procede de fabrication d'un dispositifInfo
- Publication number
- BE752608A BE752608A BE752608DA BE752608A BE 752608 A BE752608 A BE 752608A BE 752608D A BE752608D A BE 752608DA BE 752608 A BE752608 A BE 752608A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01072—Hafnium [Hf]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US84105369A | 1969-07-11 | 1969-07-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE752608A true BE752608A (fr) | 1970-12-01 |
Family
ID=25283899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE752608D BE752608A (fr) | 1969-07-11 | 1970-06-26 | Procede de fabrication d'un dispositif |
Country Status (6)
Country | Link |
---|---|
US (1) | US3632436A (fr) |
JP (1) | JPS5417631B1 (fr) |
BE (1) | BE752608A (fr) |
DE (1) | DE2033532C3 (fr) |
FR (1) | FR2051687B1 (fr) |
GB (1) | GB1317014A (fr) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3753774A (en) * | 1971-04-05 | 1973-08-21 | Rca Corp | Method for making an intermetallic contact to a semiconductor device |
DE2207012C2 (de) * | 1972-02-15 | 1985-10-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Kontaktierung von Halbleiterbauelementen |
US3769688A (en) * | 1972-04-21 | 1973-11-06 | Rca Corp | Method of making an electrically-insulating seal between a metal body and a semiconductor device |
US3925572A (en) * | 1972-10-12 | 1975-12-09 | Ncr Co | Multilevel conductor structure and method |
US4106051A (en) * | 1972-11-08 | 1978-08-08 | Ferranti Limited | Semiconductor devices |
US3900344A (en) * | 1973-03-23 | 1975-08-19 | Ibm | Novel integratable schottky barrier structure and method for the fabrication thereof |
US4096510A (en) * | 1974-08-19 | 1978-06-20 | Matsushita Electric Industrial Co., Ltd. | Thermal printing head |
US4024569A (en) * | 1975-01-08 | 1977-05-17 | Rca Corporation | Semiconductor ohmic contact |
JPS5268376A (en) * | 1975-12-05 | 1977-06-07 | Nec Corp | Semiconductor device |
DE2555187A1 (de) * | 1975-12-08 | 1977-06-16 | Siemens Ag | Verfahren zum herstellen einer halbleitervorrichtung |
US4600933A (en) * | 1976-12-14 | 1986-07-15 | Standard Microsystems Corporation | Semiconductor integrated circuit structure with selectively modified insulation layer |
JPS543480A (en) * | 1977-06-09 | 1979-01-11 | Fujitsu Ltd | Manufacture of semiconductor device |
US4297393A (en) * | 1980-02-28 | 1981-10-27 | Rca Corporation | Method of applying thin metal deposits to a substrate |
JPS58500680A (ja) * | 1981-05-04 | 1983-04-28 | モトロ−ラ・インコ−ポレ−テツド | 低抵抗合成金属導体を具えた半導体デバイスおよびその製造方法 |
US4407860A (en) * | 1981-06-30 | 1983-10-04 | International Business Machines Corporation | Process for producing an improved quality electrolessly deposited nickel layer |
US4648175A (en) * | 1985-06-12 | 1987-03-10 | Ncr Corporation | Use of selectively deposited tungsten for contact formation and shunting metallization |
ATE67897T1 (de) * | 1985-10-22 | 1991-10-15 | Siemens Ag | Integrierte halbleiterschaltung mit einem elektrisch leitenden flaechenelement. |
US4910049A (en) * | 1986-12-15 | 1990-03-20 | International Business Machines Corporation | Conditioning a dielectric substrate for plating thereon |
DE68928253T2 (de) * | 1988-06-23 | 1998-01-15 | Toshiba Kawasaki Kk | Verfahren zur Herstellung von metallischen Verbindungen auf Halbleiterbauelemente |
ATE376201T1 (de) * | 2003-08-19 | 2007-11-15 | Mallinckrodt Baker Inc | Ablös- und reinigungszusammensetzungen für die mikroelektronik |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL97268C (fr) * | 1955-04-22 | 1900-01-01 | ||
US3189973A (en) * | 1961-11-27 | 1965-06-22 | Bell Telephone Labor Inc | Method of fabricating a semiconductor device |
NL303035A (fr) * | 1963-02-06 | 1900-01-01 | ||
GB1030540A (en) * | 1964-01-02 | 1966-05-25 | Gen Electric | Improvements in and relating to semi-conductor diodes |
US3523038A (en) * | 1965-06-02 | 1970-08-04 | Texas Instruments Inc | Process for making ohmic contact to planar germanium semiconductor devices |
FR1535286A (fr) * | 1966-09-26 | 1968-08-02 | Gen Micro Electronics | Transistor semi-conducteur à oxyde métallique à effet de champ et son procédé de fabrication |
US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
US3460007A (en) * | 1967-07-03 | 1969-08-05 | Rca Corp | Semiconductor junction device |
-
1969
- 1969-07-11 US US841053A patent/US3632436A/en not_active Expired - Lifetime
-
1970
- 1970-06-26 BE BE752608D patent/BE752608A/fr unknown
- 1970-07-03 GB GB3238870A patent/GB1317014A/en not_active Expired
- 1970-07-07 DE DE702033532A patent/DE2033532C3/de not_active Expired
- 1970-07-08 JP JP5981570A patent/JPS5417631B1/ja active Pending
- 1970-07-08 FR FR7025428A patent/FR2051687B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3632436A (en) | 1972-01-04 |
DE2033532C3 (de) | 1979-03-08 |
DE2033532B2 (de) | 1978-07-06 |
GB1317014A (en) | 1973-05-16 |
DE2033532A1 (de) | 1971-01-28 |
FR2051687A1 (fr) | 1971-04-09 |
FR2051687B1 (fr) | 1976-03-19 |
JPS5417631B1 (fr) | 1979-07-02 |
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