FR2331153A1 - Procede de fabrication d'un dispositif semi-conducteur - Google Patents
Procede de fabrication d'un dispositif semi-conducteurInfo
- Publication number
- FR2331153A1 FR2331153A1 FR7633828A FR7633828A FR2331153A1 FR 2331153 A1 FR2331153 A1 FR 2331153A1 FR 7633828 A FR7633828 A FR 7633828A FR 7633828 A FR7633828 A FR 7633828A FR 2331153 A1 FR2331153 A1 FR 2331153A1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/630,490 US4001050A (en) | 1975-11-10 | 1975-11-10 | Method of fabricating an isolated p-n junction |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2331153A1 true FR2331153A1 (fr) | 1977-06-03 |
FR2331153B1 FR2331153B1 (fr) | 1979-03-09 |
Family
ID=24527389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7633828A Granted FR2331153A1 (fr) | 1975-11-10 | 1976-11-10 | Procede de fabrication d'un dispositif semi-conducteur |
Country Status (7)
Country | Link |
---|---|
US (1) | US4001050A (fr) |
JP (1) | JPS5260068A (fr) |
DE (1) | DE2650865A1 (fr) |
FR (1) | FR2331153A1 (fr) |
GB (1) | GB1522269A (fr) |
IT (1) | IT1067265B (fr) |
NL (1) | NL7612257A (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3044132A1 (de) * | 1980-11-24 | 1982-07-15 | Siemens AG, 1000 Berlin und 8000 München | Dynamische halbleiter-speicherzelle mit wahlfreiem zugriff und verfahren zu ihrer herstellung |
US5250461A (en) * | 1991-05-17 | 1993-10-05 | Delco Electronics Corporation | Method for dielectrically isolating integrated circuits using doped oxide sidewalls |
US5250837A (en) * | 1991-05-17 | 1993-10-05 | Delco Electronics Corporation | Method for dielectrically isolating integrated circuits using doped oxide sidewalls |
US6509237B2 (en) * | 2001-05-11 | 2003-01-21 | Hynix Semiconductor America, Inc. | Flash memory cell fabrication sequence |
US6492710B1 (en) * | 2001-06-07 | 2002-12-10 | Cypress Semiconductor Corp. | Substrate isolated transistor |
US6905955B2 (en) * | 2003-02-04 | 2005-06-14 | Micron Technology, Inc. | Methods of forming conductive connections, and methods of forming nanofeatures |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3717507A (en) * | 1969-06-19 | 1973-02-20 | Shibaura Electric Co Ltd | Method of manufacturing semiconductor devices utilizing ion-implantation and arsenic diffusion |
NL96608C (fr) * | 1969-10-03 | |||
BE759667A (fr) * | 1969-12-01 | 1971-06-01 | Philips Nv | Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur obtenu par la mise en oeuvre de ce procede |
US3856578A (en) * | 1972-03-13 | 1974-12-24 | Bell Telephone Labor Inc | Bipolar transistors and method of manufacture |
US3756861A (en) * | 1972-03-13 | 1973-09-04 | Bell Telephone Labor Inc | Bipolar transistors and method of manufacture |
US3891480A (en) * | 1973-10-01 | 1975-06-24 | Honeywell Inc | Bipolar semiconductor device construction |
US3898105A (en) * | 1973-10-25 | 1975-08-05 | Mostek Corp | Method for making FET circuits |
-
1975
- 1975-11-10 US US05/630,490 patent/US4001050A/en not_active Expired - Lifetime
-
1976
- 1976-10-20 JP JP51125081A patent/JPS5260068A/ja active Granted
- 1976-10-27 GB GB44551/76A patent/GB1522269A/en not_active Expired
- 1976-11-04 NL NL7612257A patent/NL7612257A/xx not_active Application Discontinuation
- 1976-11-06 DE DE19762650865 patent/DE2650865A1/de active Pending
- 1976-11-08 IT IT29115/76A patent/IT1067265B/it active
- 1976-11-10 FR FR7633828A patent/FR2331153A1/fr active Granted
Non-Patent Citations (1)
Title |
---|
MICROELECTRONICS, VOL. 4, NO. 4, 1973, LONDON GB , R.W.LUTZ ET AL: "NEW DEVELOPMENTS IN CONSUMER INTEGRATED CIRCUITS", PAGES 3-9) * |
Also Published As
Publication number | Publication date |
---|---|
NL7612257A (nl) | 1977-05-12 |
DE2650865A1 (de) | 1977-05-18 |
JPS6156607B2 (fr) | 1986-12-03 |
JPS5260068A (en) | 1977-05-18 |
IT1067265B (it) | 1985-03-16 |
FR2331153B1 (fr) | 1979-03-09 |
US4001050A (en) | 1977-01-04 |
GB1522269A (en) | 1978-08-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |