CH514935A - Verfahren zur Herstellung eines Halbleiterbauelements und durch dieses Verfahren hergestelltes Halbleiterbauelement - Google Patents
Verfahren zur Herstellung eines Halbleiterbauelements und durch dieses Verfahren hergestelltes HalbleiterbauelementInfo
- Publication number
- CH514935A CH514935A CH1934069A CH1934069A CH514935A CH 514935 A CH514935 A CH 514935A CH 1934069 A CH1934069 A CH 1934069A CH 1934069 A CH1934069 A CH 1934069A CH 514935 A CH514935 A CH 514935A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor component
- manufacturing
- manufactured
- component manufactured
- semiconductor
- Prior art date
Links
- 238000000034 method Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/945—Special, e.g. metal
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB61953/68A GB1244225A (en) | 1968-12-31 | 1968-12-31 | Improvements in and relating to methods of manufacturing semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH514935A true CH514935A (de) | 1971-10-31 |
Family
ID=10487686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1934069A CH514935A (de) | 1968-12-31 | 1969-12-29 | Verfahren zur Herstellung eines Halbleiterbauelements und durch dieses Verfahren hergestelltes Halbleiterbauelement |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US3650019A (de) |
| JP (1) | JPS4816034B1 (de) |
| AT (1) | AT311420B (de) |
| BE (1) | BE743829A (de) |
| BR (1) | BR6915650D0 (de) |
| CH (1) | CH514935A (de) |
| DE (1) | DE1965799C3 (de) |
| DK (1) | DK125220B (de) |
| ES (1) | ES374906A1 (de) |
| FR (1) | FR2027452B1 (de) |
| GB (1) | GB1244225A (de) |
| NL (1) | NL6919463A (de) |
| SE (1) | SE347392B (de) |
| ZA (1) | ZA698728B (de) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE759057A (de) * | 1969-11-19 | 1971-05-17 | Philips Nv | |
| GB1289740A (de) * | 1969-12-24 | 1972-09-20 | ||
| FR2129992B1 (de) * | 1971-03-25 | 1974-06-21 | Lecrosnier Daniel | |
| US3874937A (en) * | 1973-10-31 | 1975-04-01 | Gen Instrument Corp | Method for manufacturing metal oxide semiconductor integrated circuit of reduced size |
| FR2289051A1 (fr) * | 1974-10-22 | 1976-05-21 | Ibm | Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions |
| US3912546A (en) * | 1974-12-06 | 1975-10-14 | Hughes Aircraft Co | Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor |
| US3930893A (en) * | 1975-03-03 | 1976-01-06 | Honeywell Information Systems, Inc. | Conductivity connected charge-coupled device fabrication process |
| US4061506A (en) * | 1975-05-01 | 1977-12-06 | Texas Instruments Incorporated | Correcting doping defects |
| US4011105A (en) * | 1975-09-15 | 1977-03-08 | Mos Technology, Inc. | Field inversion control for n-channel device integrated circuits |
| JPS53128281A (en) * | 1977-04-15 | 1978-11-09 | Hitachi Ltd | Insulated gate field effect type semiconductor device for large power |
| US4171229A (en) * | 1977-06-24 | 1979-10-16 | International Business Machines Corporation | Improved process to form bucket brigade device |
| US4142199A (en) * | 1977-06-24 | 1979-02-27 | International Business Machines Corporation | Bucket brigade device and process |
| US4224733A (en) * | 1977-10-11 | 1980-09-30 | Fujitsu Limited | Ion implantation method |
| US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| US4280271A (en) * | 1979-10-11 | 1981-07-28 | Texas Instruments Incorporated | Three level interconnect process for manufacture of integrated circuit devices |
| JPH0834297B2 (ja) * | 1988-12-28 | 1996-03-29 | 三菱電機株式会社 | 半導体装置 |
| AU657930B2 (en) * | 1991-01-30 | 1995-03-30 | Canon Kabushiki Kaisha | Nozzle structures for bubblejet print devices |
| US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
| JP6356516B2 (ja) * | 2014-07-22 | 2018-07-11 | 東芝メモリ株式会社 | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3328210A (en) * | 1964-10-26 | 1967-06-27 | North American Aviation Inc | Method of treating semiconductor device by ionic bombardment |
| NL6604962A (de) * | 1966-04-14 | 1967-10-16 | ||
| GB1233545A (de) * | 1967-08-18 | 1971-05-26 | ||
| US3470609A (en) * | 1967-08-18 | 1969-10-07 | Conductron Corp | Method of producing a control system |
| US3558366A (en) * | 1968-09-17 | 1971-01-26 | Bell Telephone Labor Inc | Metal shielding for ion implanted semiconductor device |
-
1968
- 1968-12-31 GB GB61953/68A patent/GB1244225A/en not_active Expired
-
1969
- 1969-12-15 ZA ZA698728A patent/ZA698728B/xx unknown
- 1969-12-23 DK DK683869AA patent/DK125220B/da unknown
- 1969-12-24 ES ES374906A patent/ES374906A1/es not_active Expired
- 1969-12-25 NL NL6919463A patent/NL6919463A/xx unknown
- 1969-12-29 BR BR215650/69A patent/BR6915650D0/pt unknown
- 1969-12-29 SE SE17986/69A patent/SE347392B/xx unknown
- 1969-12-29 CH CH1934069A patent/CH514935A/de not_active IP Right Cessation
- 1969-12-29 JP JP44105411A patent/JPS4816034B1/ja active Pending
- 1969-12-29 US US888543A patent/US3650019A/en not_active Expired - Lifetime
- 1969-12-29 BE BE743829D patent/BE743829A/xx unknown
- 1969-12-30 AT AT1211869A patent/AT311420B/de not_active IP Right Cessation
- 1969-12-30 FR FR6945393A patent/FR2027452B1/fr not_active Expired
- 1969-12-30 DE DE1965799A patent/DE1965799C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE347392B (de) | 1972-07-31 |
| DE1965799A1 (de) | 1970-07-23 |
| FR2027452A1 (de) | 1970-09-25 |
| US3650019A (en) | 1972-03-21 |
| NL6919463A (de) | 1970-07-02 |
| GB1244225A (en) | 1971-08-25 |
| ES374906A1 (es) | 1972-03-16 |
| BR6915650D0 (pt) | 1973-01-02 |
| BE743829A (de) | 1970-06-29 |
| DK125220B (da) | 1973-01-15 |
| FR2027452B1 (de) | 1974-02-01 |
| AT311420B (de) | 1973-11-12 |
| DE1965799B2 (de) | 1977-09-29 |
| JPS4816034B1 (de) | 1973-05-18 |
| ZA698728B (en) | 1971-07-28 |
| DE1965799C3 (de) | 1978-06-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |