CH544409A - Verfahren zur Herstellung eines Halbleiterbauelementes - Google Patents

Verfahren zur Herstellung eines Halbleiterbauelementes

Info

Publication number
CH544409A
CH544409A CH1855472A CH1855472A CH544409A CH 544409 A CH544409 A CH 544409A CH 1855472 A CH1855472 A CH 1855472A CH 1855472 A CH1855472 A CH 1855472A CH 544409 A CH544409 A CH 544409A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor component
semiconductor
component
Prior art date
Application number
CH1855472A
Other languages
English (en)
Inventor
Kenneth Herb George
Franklin Labuda Edward
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH544409A publication Critical patent/CH544409A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/945Special, e.g. metal
CH1855472A 1971-12-20 1972-12-20 Verfahren zur Herstellung eines Halbleiterbauelementes CH544409A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00209560A US3808108A (en) 1971-12-20 1971-12-20 Semiconductor device fabrication using nickel to mask cathodic etching

Publications (1)

Publication Number Publication Date
CH544409A true CH544409A (de) 1973-11-15

Family

ID=22779246

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1855472A CH544409A (de) 1971-12-20 1972-12-20 Verfahren zur Herstellung eines Halbleiterbauelementes

Country Status (10)

Country Link
US (1) US3808108A (de)
JP (1) JPS5117871B2 (de)
BE (1) BE792908A (de)
CA (1) CA956039A (de)
CH (1) CH544409A (de)
DE (1) DE2261337B2 (de)
FR (1) FR2164684B1 (de)
IT (1) IT976112B (de)
NL (1) NL155984B (de)
SE (1) SE381536B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2328284A1 (fr) * 1975-10-15 1977-05-13 Labo Electronique Physique Diode fonctionnant dans le domaine des ondes millimetriques et son procede de fabrication
JPS52136590A (en) * 1976-05-11 1977-11-15 Matsushita Electric Ind Co Ltd Production of semiconductor device
CA1109927A (en) * 1978-06-26 1981-09-29 Edmund T. Marciniec Manufacture of thin film thermal print head
US4206541A (en) * 1978-06-26 1980-06-10 Extel Corporation Method of manufacturing thin film thermal print heads
US4232440A (en) * 1979-02-27 1980-11-11 Bell Telephone Laboratories, Incorporated Contact structure for light emitting device
US4375390A (en) * 1982-03-15 1983-03-01 Anderson Nathaniel C Thin film techniques for fabricating narrow track ferrite heads
US4514751A (en) * 1982-12-23 1985-04-30 International Business Machines Corporation Compressively stresses titanium metallurgy for contacting passivated semiconductor devices
WO2003032397A2 (en) 2001-07-24 2003-04-17 Cree, Inc. INSULTING GATE AlGaN/GaN HEMT
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US8212290B2 (en) 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
US8729156B2 (en) 2009-07-17 2014-05-20 Arkema France Polyhydroxyalkanoate composition exhibiting improved impact resistance at low levels of impact modifier
WO2014085241A1 (en) * 2012-11-29 2014-06-05 Corning Incorporated Joining methods for bulk metallic glasses
TWI733069B (zh) * 2017-12-31 2021-07-11 美商羅門哈斯電子材料有限公司 單體、聚合物及包含其的微影組合物

Also Published As

Publication number Publication date
JPS5117871B2 (de) 1976-06-05
DE2261337B2 (de) 1977-09-15
NL155984B (nl) 1978-02-15
FR2164684B1 (de) 1977-04-08
NL7217010A (de) 1973-06-22
US3808108A (en) 1974-04-30
DE2261337A1 (de) 1973-07-26
SE381536B (sv) 1975-12-08
JPS4886473A (de) 1973-11-15
IT976112B (it) 1974-08-20
BE792908A (fr) 1973-04-16
FR2164684A1 (de) 1973-08-03
CA956039A (en) 1974-10-08

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Legal Events

Date Code Title Description
PL Patent ceased