DE2551961A1 - Verfahren zur herstellung eines halbleiterbauelementes - Google Patents

Verfahren zur herstellung eines halbleiterbauelementes

Info

Publication number
DE2551961A1
DE2551961A1 DE19752551961 DE2551961A DE2551961A1 DE 2551961 A1 DE2551961 A1 DE 2551961A1 DE 19752551961 DE19752551961 DE 19752551961 DE 2551961 A DE2551961 A DE 2551961A DE 2551961 A1 DE2551961 A1 DE 2551961A1
Authority
DE
Germany
Prior art keywords
producing
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19752551961
Other languages
English (en)
Inventor
Atsuo Hotta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2551961A1 publication Critical patent/DE2551961A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
DE19752551961 1974-11-22 1975-11-19 Verfahren zur herstellung eines halbleiterbauelementes Pending DE2551961A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13365874A JPS5329555B2 (de) 1974-11-22 1974-11-22

Publications (1)

Publication Number Publication Date
DE2551961A1 true DE2551961A1 (de) 1976-05-26

Family

ID=15109906

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752551961 Pending DE2551961A1 (de) 1974-11-22 1975-11-19 Verfahren zur herstellung eines halbleiterbauelementes

Country Status (3)

Country Link
US (1) US4045249A (de)
JP (1) JPS5329555B2 (de)
DE (1) DE2551961A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5485029A (en) * 1994-06-30 1996-01-16 International Business Machines Corporation On-chip ground plane for semiconductor devices to reduce parasitic signal propagation

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240977A (en) * 1975-09-26 1977-03-30 Matsushita Electric Ind Co Ltd Process for production of semiconductor device
US4179311A (en) * 1977-01-17 1979-12-18 Mostek Corporation Method of stabilizing semiconductor device by converting doped poly-Si to polyoxides
US4099987A (en) * 1977-07-25 1978-07-11 International Business Machines Corporation Fabricating integrated circuits incorporating high-performance bipolar transistors
US4195307A (en) * 1977-07-25 1980-03-25 International Business Machines Corporation Fabricating integrated circuits incorporating high-performance bipolar transistors
NL7709363A (nl) * 1977-08-25 1979-02-27 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze.
FR2454698A1 (fr) * 1979-04-20 1980-11-14 Radiotechnique Compelec Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede
JPS5946065A (ja) * 1982-09-09 1984-03-15 Toshiba Corp 半導体装置の製造方法
US5236856A (en) * 1991-08-30 1993-08-17 Micron Technology, Inc. Method for minimizing diffusion of conductivity enhancing impurities from one region of polysilicon layer to another region and a semiconductor device produced according to the method
US5273924A (en) * 1991-08-30 1993-12-28 Micron Technology, Inc. Method for forming an SRAM by minimizing diffusion of conductivity enhancing impurities from one region of a polysilicon layer to another region
US6780718B2 (en) * 1993-11-30 2004-08-24 Stmicroelectronics, Inc. Transistor structure and method for making same
US5998277A (en) * 1998-03-13 1999-12-07 Texas Instruments - Acer Incorporated Method to form global planarized shallow trench isolation
US6175147B1 (en) * 1998-05-14 2001-01-16 Micron Technology Inc. Device isolation for semiconductor devices
TW495859B (en) * 2001-07-23 2002-07-21 Mosel Vitelic Inc Method for preventing gate oxide thinning
JP4556376B2 (ja) * 2001-09-12 2010-10-06 セイコーエプソン株式会社 半導体基板の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622382A (en) * 1969-05-05 1971-11-23 Ibm Semiconductor isolation structure and method of producing
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming
US3947299A (en) * 1971-05-22 1976-03-30 U.S. Philips Corporation Method of manufacturing semiconductor devices
US3748187A (en) * 1971-08-03 1973-07-24 Hughes Aircraft Co Self-registered doped layer for preventing field inversion in mis circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5485029A (en) * 1994-06-30 1996-01-16 International Business Machines Corporation On-chip ground plane for semiconductor devices to reduce parasitic signal propagation

Also Published As

Publication number Publication date
JPS5329555B2 (de) 1978-08-22
JPS5160474A (de) 1976-05-26
US4045249A (en) 1977-08-30

Similar Documents

Publication Publication Date Title
AT340134B (de) Verfahren zur herstellung verzweigter polymerisate
AT341055B (de) Verfahren zur herstellung eines lackbindemittels
DD129644A5 (de) Verfahren zur herstellung neuer prostaglandinvorprodukte
CH529395A (de) Verfahren zur Herstellung eines Wertzeichens
AT342040B (de) Verfahren zur herstellung neuer 2-phenyl-indolderivate
DE2551961A1 (de) Verfahren zur herstellung eines halbleiterbauelementes
AT339051B (de) Verfahren zur herstellung eines anorganisch-organischen kunststoffes
AT337166B (de) Verfahren zur herstellung neuer substituierter benzocycloalkenylalkane
ATA639275A (de) Verfahren zur herstellung neuer rifamycine
CH544409A (de) Verfahren zur Herstellung eines Halbleiterbauelementes
AT347971B (de) Verfahren zur herstellung neuer phosphor- organischer verbindungen
AT338968B (de) Verfahren zur herstellung eines arzneimittels
ATA727575A (de) Verfahren zur herstellung eines copolymerisationsproduktes
ATA939874A (de) Bindepechs eines verfahren zur herstellung
AT356264B (de) Verfahren zur herstellung eines trockenen anti- biotischen medikaments
DD122963A5 (de) Verfahren zur herstellung fluorierter verbindungen
ATA986075A (de) Verfahren zur herstellung neuer indolderivate
AT347050B (de) Verfahren zur herstellung eines neuen 6-mehtyl- 8beta- (substituierten)-methylergolins
AT343250B (de) Verfahren zur herstellung eines detergens
AT335485B (de) Verfahren zur herstellung eines harnstoff-formaldehyd-dungers
DD129783A5 (de) Verfahren zur herstellung eines enons
ATA924875A (de) Verfahren zur herstellung neuer 5-nitroimida- zolderivate
AT343130B (de) Verfahren zur herstellung selen-haltiger alfa-aminosauren
AT359562B (de) Verfahren zur herstellung einer planaren integrierten halbleiterschaltung
AT351525B (de) Verfahren zur herstellung neuer thiazol- derivate

Legal Events

Date Code Title Description
OHN Withdrawal