FR2454698A1 - Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede - Google Patents
Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procedeInfo
- Publication number
- FR2454698A1 FR2454698A1 FR7910086A FR7910086A FR2454698A1 FR 2454698 A1 FR2454698 A1 FR 2454698A1 FR 7910086 A FR7910086 A FR 7910086A FR 7910086 A FR7910086 A FR 7910086A FR 2454698 A1 FR2454698 A1 FR 2454698A1
- Authority
- FR
- France
- Prior art keywords
- integrated circuits
- mask
- devices obtained
- producing integrated
- multilayer mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PROCEDE DE REALISATION DE CIRCUITS INTEGRES A L'AIDE D'UN MASQUE MULTICOUCHE. LA GRAVURE DES COUCHES 46, 47, 48 DU MASQUE COMPREND UNE ATTAQUE LATERALE CONTROLEE DE LA SOUS-COUCHE 47 FAISANT APPARAITRE, EN LISIERE DE LA COUCHE AUXILIAIRE 46 DES BORDS 58, QUI CONT ELIMINES, EN PARTIE 58A, 58C AVANT FORMATION D'UNE COUCHE ISOLANTE 63, EN PARTIE 58B, 58D APRES LADITE FORMATION, APRES QUOI EN RELIQUAT 4613 D'ILOT DE MASQUE EST AUSSI ELIMINE, LES ELIMINATIONS DETERMINANT DES OUVERTURES PERMETTANT LA FORMATION DE ZONES 71, 73, 78. CIRCUITS INTEGRES HAUTES FREQUENCES.
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7910086A FR2454698A1 (fr) | 1979-04-20 | 1979-04-20 | Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede |
CA000349582A CA1165901A (fr) | 1979-04-20 | 1980-04-10 | Methode de fabrication de circuits integres au moyen d'un masque multicouche |
US06/139,932 US4368573A (en) | 1979-04-20 | 1980-04-14 | Method of manufacturing integrated circuits by means of a multilayer mask |
DE19803014363 DE3014363A1 (de) | 1979-04-20 | 1980-04-15 | Verfahren zur herstellung integrierter schaltungen mit hilfe einer mehrschichtenmaske und durch dieses verfahren hergestellte anordnungen |
NL8002199A NL8002199A (nl) | 1979-04-20 | 1980-04-16 | Werkwijze voor het vervaardigen van geintegreerde schakelingen met behulp van een meerlagenmasker en inrichtingen verkregen met deze werkwijze. |
GB8012671A GB2047960B (en) | 1979-04-20 | 1980-04-17 | Bipolar transistor manufacture |
AU57536/80A AU5753680A (en) | 1979-04-20 | 1980-04-17 | Manufacturing integrated circuits by means of a multilayer mask |
JP5180980A JPS55141753A (en) | 1979-04-20 | 1980-04-21 | Method of fabricating semiconductor device |
US06/768,190 US4608588A (en) | 1979-04-20 | 1985-08-23 | Semiconductor device manufactured by using a multilayer mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7910086A FR2454698A1 (fr) | 1979-04-20 | 1979-04-20 | Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2454698A1 true FR2454698A1 (fr) | 1980-11-14 |
FR2454698B1 FR2454698B1 (fr) | 1982-09-03 |
Family
ID=9224560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7910086A Granted FR2454698A1 (fr) | 1979-04-20 | 1979-04-20 | Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede |
Country Status (8)
Country | Link |
---|---|
US (2) | US4368573A (fr) |
JP (1) | JPS55141753A (fr) |
AU (1) | AU5753680A (fr) |
CA (1) | CA1165901A (fr) |
DE (1) | DE3014363A1 (fr) |
FR (1) | FR2454698A1 (fr) |
GB (1) | GB2047960B (fr) |
NL (1) | NL8002199A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3208259A1 (de) * | 1981-03-11 | 1982-09-23 | Mitsubishi Denki K.K., Tokyo | Verfahren zur herstellung einer halbleiteranordnung |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4443932A (en) * | 1982-01-18 | 1984-04-24 | Motorla, Inc. | Self-aligned oxide isolated process and device |
JPS58127374A (ja) * | 1982-01-25 | 1983-07-29 | Hitachi Ltd | 半導体装置の製造方法 |
JPS58130575A (ja) * | 1982-01-29 | 1983-08-04 | Hitachi Ltd | 電界効果トランジスタの製造方法 |
US4561168A (en) * | 1982-11-22 | 1985-12-31 | Siliconix Incorporated | Method of making shadow isolated metal DMOS FET device |
US4586243A (en) * | 1983-01-14 | 1986-05-06 | General Motors Corporation | Method for more uniformly spacing features in a semiconductor monolithic integrated circuit |
US4571817A (en) * | 1985-03-15 | 1986-02-25 | Motorola, Inc. | Method of making closely spaced contacts to PN-junction using stacked polysilicon layers, differential etching and ion implantations |
NL8501992A (nl) * | 1985-07-11 | 1987-02-02 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
NL8503408A (nl) * | 1985-12-11 | 1987-07-01 | Philips Nv | Hoogfrequenttransistor en werkwijze ter vervaardiging daarvan. |
US4748103A (en) * | 1986-03-21 | 1988-05-31 | Advanced Power Technology | Mask-surrogate semiconductor process employing dopant protective region |
US4812417A (en) * | 1986-07-30 | 1989-03-14 | Mitsubishi Denki Kabushiki Kaisha | Method of making self aligned external and active base regions in I.C. processing |
JPS63182860A (ja) * | 1987-01-26 | 1988-07-28 | Toshiba Corp | 半導体装置とその製造方法 |
GB2204992A (en) * | 1987-05-05 | 1988-11-23 | British Telecomm | Bipolar transistor |
US4933295A (en) * | 1987-05-08 | 1990-06-12 | Raytheon Company | Method of forming a bipolar transistor having closely spaced device regions |
US5064773A (en) * | 1988-12-27 | 1991-11-12 | Raytheon Company | Method of forming bipolar transistor having closely spaced device regions |
DE3915650A1 (de) * | 1989-05-12 | 1990-11-15 | Siemens Ag | Verfahren zur strukturierung einer auf einem halbleiterschichtaufbau angeordneten schicht |
US5198298A (en) * | 1989-10-24 | 1993-03-30 | Advanced Micro Devices, Inc. | Etch stop layer using polymers |
DE4308958A1 (de) * | 1993-03-21 | 1994-09-22 | Prema Paezisionselektronik Gmb | Verfahren zur Herstellung von Bipolartransistoren |
US5470801A (en) * | 1993-06-28 | 1995-11-28 | Lsi Logic Corporation | Low dielectric constant insulation layer for integrated circuit structure and method of making same |
JP3772456B2 (ja) * | 1997-04-23 | 2006-05-10 | 三菱電機株式会社 | 太陽電池及びその製造方法、半導体製造装置 |
US6339024B1 (en) * | 2000-06-28 | 2002-01-15 | International Business Machines Corporation | Reinforced integrated circuits |
US9893088B2 (en) * | 2013-05-29 | 2018-02-13 | Joled Inc. | Thin film transistor device, method for manufacturing same and display device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2292333A1 (fr) * | 1974-11-25 | 1976-06-18 | Styapas Styapono | Procede de fabrication de dispositifs a semi-conducteurs |
FR2305022A1 (fr) * | 1975-03-21 | 1976-10-15 | Western Electric Co | Procede de fabrication de transistors |
FR2312856A1 (fr) * | 1975-05-27 | 1976-12-24 | Fairchild Camera Instr Co | Procede de gravure des bords et structure pour produire des ouvertures etroites aboutissant a la surface de matieres |
FR2316741A1 (fr) * | 1975-06-30 | 1977-01-28 | Philips Nv | Dispositif semi-conducteur et procede pour sa fabrication |
US4061530A (en) * | 1976-07-19 | 1977-12-06 | Fairchild Camera And Instrument Corporation | Process for producing successive stages of a charge coupled device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3717507A (en) * | 1969-06-19 | 1973-02-20 | Shibaura Electric Co Ltd | Method of manufacturing semiconductor devices utilizing ion-implantation and arsenic diffusion |
US3940288A (en) * | 1973-05-16 | 1976-02-24 | Fujitsu Limited | Method of making a semiconductor device |
JPS5329555B2 (fr) * | 1974-11-22 | 1978-08-22 | ||
JPS5816337B2 (ja) * | 1975-06-13 | 1983-03-30 | 日本電気株式会社 | 半導体装置の製造方法 |
US4127864A (en) * | 1975-06-30 | 1978-11-28 | U.S. Philips Corporation | Semiconductor device |
US4115797A (en) * | 1976-10-04 | 1978-09-19 | Fairchild Camera And Instrument Corporation | Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector |
US4111726A (en) * | 1977-04-01 | 1978-09-05 | Burroughs Corporation | Bipolar integrated circuit process by separately forming active and inactive base regions |
NL7703941A (nl) * | 1977-04-12 | 1978-10-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgelei- derinrichting en inrichting, vervaardigd door toepassing van de werkwijze. |
US4131497A (en) * | 1977-07-12 | 1978-12-26 | International Business Machines Corporation | Method of manufacturing self-aligned semiconductor devices |
US4267557A (en) * | 1978-06-08 | 1981-05-12 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device |
US4261763A (en) * | 1979-10-01 | 1981-04-14 | Burroughs Corporation | Fabrication of integrated circuits employing only ion implantation for all dopant layers |
US4392149A (en) * | 1980-03-03 | 1983-07-05 | International Business Machines Corporation | Bipolar transistor |
-
1979
- 1979-04-20 FR FR7910086A patent/FR2454698A1/fr active Granted
-
1980
- 1980-04-10 CA CA000349582A patent/CA1165901A/fr not_active Expired
- 1980-04-14 US US06/139,932 patent/US4368573A/en not_active Expired - Lifetime
- 1980-04-15 DE DE19803014363 patent/DE3014363A1/de active Granted
- 1980-04-16 NL NL8002199A patent/NL8002199A/nl not_active Application Discontinuation
- 1980-04-17 GB GB8012671A patent/GB2047960B/en not_active Expired
- 1980-04-17 AU AU57536/80A patent/AU5753680A/en not_active Abandoned
- 1980-04-21 JP JP5180980A patent/JPS55141753A/ja active Granted
-
1985
- 1985-08-23 US US06/768,190 patent/US4608588A/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2292333A1 (fr) * | 1974-11-25 | 1976-06-18 | Styapas Styapono | Procede de fabrication de dispositifs a semi-conducteurs |
FR2305022A1 (fr) * | 1975-03-21 | 1976-10-15 | Western Electric Co | Procede de fabrication de transistors |
FR2312856A1 (fr) * | 1975-05-27 | 1976-12-24 | Fairchild Camera Instr Co | Procede de gravure des bords et structure pour produire des ouvertures etroites aboutissant a la surface de matieres |
FR2316741A1 (fr) * | 1975-06-30 | 1977-01-28 | Philips Nv | Dispositif semi-conducteur et procede pour sa fabrication |
US4061530A (en) * | 1976-07-19 | 1977-12-06 | Fairchild Camera And Instrument Corporation | Process for producing successive stages of a charge coupled device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3208259A1 (de) * | 1981-03-11 | 1982-09-23 | Mitsubishi Denki K.K., Tokyo | Verfahren zur herstellung einer halbleiteranordnung |
Also Published As
Publication number | Publication date |
---|---|
CA1165901A (fr) | 1984-04-17 |
GB2047960B (en) | 1983-04-20 |
US4608588A (en) | 1986-08-26 |
GB2047960A (en) | 1980-12-03 |
DE3014363A1 (de) | 1980-11-06 |
US4368573A (en) | 1983-01-18 |
JPH0147901B2 (fr) | 1989-10-17 |
AU5753680A (en) | 1980-10-23 |
FR2454698B1 (fr) | 1982-09-03 |
DE3014363C2 (fr) | 1987-11-26 |
JPS55141753A (en) | 1980-11-05 |
NL8002199A (nl) | 1980-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CA | Change of address | ||
CD | Change of name or company name | ||
ST | Notification of lapse |