JPS57183035A - Formation of pattern for mask matching - Google Patents
Formation of pattern for mask matchingInfo
- Publication number
- JPS57183035A JPS57183035A JP6957381A JP6957381A JPS57183035A JP S57183035 A JPS57183035 A JP S57183035A JP 6957381 A JP6957381 A JP 6957381A JP 6957381 A JP6957381 A JP 6957381A JP S57183035 A JPS57183035 A JP S57183035A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- region
- sio2 film
- formation
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 238000009792 diffusion process Methods 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 230000002411 adverse Effects 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000012545 processing Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To form an alignment pattern without reducing the production rate of non-defective chip by a method wherein an alignment pattern is provided in necessary functioning element. CONSTITUTION:An SiO2 film is formed on the surface of an Si substrate 1, the SiO2 film is selectively left over, and an alignment pattern 5 is formed. The formation of the pattern 5 is performed simultaneously with the SiO2 film mask which will be used for formation of a base region 3, and the pattern 5 is formed within the expected region where base diffusion will be performed. Subsequently, a base diffusion region 3 is formed, an SiO2 film 6 is newly formed on the surface of the region 3, and the thickness of the SiO2 film on the pattern section 5 is increased. At this time, the depth Xj of the base diffusion is provided larger than the width W of the pattern 5. Accordingly, the section 8 directly below the pattern 5 can also be included in the same diffusion region as the region 3 by performing a lateral diffusion from both sides of the pattern 5, and even after various processings are performed, an alignment pattern without inflicting an adverse effect to the characteristics can be formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6957381A JPS57183035A (en) | 1981-05-06 | 1981-05-06 | Formation of pattern for mask matching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6957381A JPS57183035A (en) | 1981-05-06 | 1981-05-06 | Formation of pattern for mask matching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57183035A true JPS57183035A (en) | 1982-11-11 |
Family
ID=13406659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6957381A Pending JPS57183035A (en) | 1981-05-06 | 1981-05-06 | Formation of pattern for mask matching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57183035A (en) |
-
1981
- 1981-05-06 JP JP6957381A patent/JPS57183035A/en active Pending
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