BE792908A - Procede de fabrication de dispositifs semi-conducteurs - Google Patents

Procede de fabrication de dispositifs semi-conducteurs

Info

Publication number
BE792908A
BE792908A BE792908DA BE792908A BE 792908 A BE792908 A BE 792908A BE 792908D A BE792908D A BE 792908DA BE 792908 A BE792908 A BE 792908A
Authority
BE
Belgium
Prior art keywords
semiconductor devices
manufacturing semiconductor
manufacturing
devices
semiconductor
Prior art date
Application number
Other languages
English (en)
French (fr)
Inventor
G K Herb
E F Labuda
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE792908A publication Critical patent/BE792908A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/945Special, e.g. metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
BE792908D 1971-12-20 Procede de fabrication de dispositifs semi-conducteurs BE792908A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00209560A US3808108A (en) 1971-12-20 1971-12-20 Semiconductor device fabrication using nickel to mask cathodic etching

Publications (1)

Publication Number Publication Date
BE792908A true BE792908A (fr) 1973-04-16

Family

ID=22779246

Family Applications (1)

Application Number Title Priority Date Filing Date
BE792908D BE792908A (fr) 1971-12-20 Procede de fabrication de dispositifs semi-conducteurs

Country Status (10)

Country Link
US (1) US3808108A (de)
JP (1) JPS5117871B2 (de)
BE (1) BE792908A (de)
CA (1) CA956039A (de)
CH (1) CH544409A (de)
DE (1) DE2261337B2 (de)
FR (1) FR2164684B1 (de)
IT (1) IT976112B (de)
NL (1) NL155984B (de)
SE (1) SE381536B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2328284A1 (fr) * 1975-10-15 1977-05-13 Labo Electronique Physique Diode fonctionnant dans le domaine des ondes millimetriques et son procede de fabrication
JPS52136590A (en) * 1976-05-11 1977-11-15 Matsushita Electric Ind Co Ltd Production of semiconductor device
US4206541A (en) * 1978-06-26 1980-06-10 Extel Corporation Method of manufacturing thin film thermal print heads
CA1109927A (en) * 1978-06-26 1981-09-29 Edmund T. Marciniec Manufacture of thin film thermal print head
US4232440A (en) * 1979-02-27 1980-11-11 Bell Telephone Laboratories, Incorporated Contact structure for light emitting device
US4375390A (en) * 1982-03-15 1983-03-01 Anderson Nathaniel C Thin film techniques for fabricating narrow track ferrite heads
US4514751A (en) * 1982-12-23 1985-04-30 International Business Machines Corporation Compressively stresses titanium metallurgy for contacting passivated semiconductor devices
JP2005527102A (ja) 2001-07-24 2005-09-08 クリー インコーポレイテッド 高電子移動度トランジスタ及びその製造方法
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US8212290B2 (en) 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
US8729156B2 (en) 2009-07-17 2014-05-20 Arkema France Polyhydroxyalkanoate composition exhibiting improved impact resistance at low levels of impact modifier
WO2014085241A1 (en) * 2012-11-29 2014-06-05 Corning Incorporated Joining methods for bulk metallic glasses
TWI733069B (zh) * 2017-12-31 2021-07-11 美商羅門哈斯電子材料有限公司 單體、聚合物及包含其的微影組合物

Also Published As

Publication number Publication date
SE381536B (sv) 1975-12-08
FR2164684B1 (de) 1977-04-08
DE2261337B2 (de) 1977-09-15
NL7217010A (de) 1973-06-22
DE2261337A1 (de) 1973-07-26
JPS5117871B2 (de) 1976-06-05
CH544409A (de) 1973-11-15
NL155984B (nl) 1978-02-15
FR2164684A1 (de) 1973-08-03
IT976112B (it) 1974-08-20
US3808108A (en) 1974-04-30
CA956039A (en) 1974-10-08
JPS4886473A (de) 1973-11-15

Similar Documents

Publication Publication Date Title
FR2276692A1 (fr) Procede de fabrication de dispositifs semiconducteurs
BE785150A (fr) Procede pour la fabrication de dispositifs semiconducteurs
BE822852A (fr) Dispositifs semi-conducteurs stabilises en procede de fabrication
FR2006784A1 (fr) Procede de fabrication de dispositifs a semi-conducteurs
BE779788R (fr) Procede de fabrication de pates de
BE766395A (fr) Procede de fabrication du 1,1-difluorethane,
BE790694A (fr) Procede de fabrication de nitroparaffines
BE790289A (fr) Procede de fabrication de zeaxanthine
BE785287A (fr) Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs
BE792908A (fr) Procede de fabrication de dispositifs semi-conducteurs
BE789534A (fr) Procede de fabrication de silanes
BE803528A (fr) Procede de fabrication de dispositifs semi-conducteurs
BE781368A (fr) Procede de fabrication de capsules minuscules
BE787642A (fr) Procede de fabrication de cristaux de grenat
BE786889A (fr) Procede de fabrication de dispositifs a semi-conducteurs
BE778430A (fr) Procede de fabrication de dispositifs
BE789174A (fr) Procede de fabrication de circuits
BE763537A (fr) Procede de fabrication de pieces moulees en silicium
BE779087A (fr) Procede de fabrication de dispositifs a avalanche
FR95067E (fr) Procédé de fabrication de dispositifs semi-conducteurs.
BE768643A (fr) Procede de fabrication de gaufrettes semiconductrices ultraminces
FR2332801A1 (fr) Procede de fabrication de dispositifs semi-conducteurs
BE766651A (fr) Procede pour la fabrication de dispositifs semiconducteurs a circuits integres
FR2298189A1 (fr) Procede pour fabriquer des dispositifs semicon
CH548374A (fr) Procede de fabrication de cyclo-alcanonoximes.