NL155984B - Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een metallisatiepatroon en aldus vervaardigde halfgeleiderinrichting. - Google Patents

Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een metallisatiepatroon en aldus vervaardigde halfgeleiderinrichting.

Info

Publication number
NL155984B
NL155984B NL7217010.A NL7217010A NL155984B NL 155984 B NL155984 B NL 155984B NL 7217010 A NL7217010 A NL 7217010A NL 155984 B NL155984 B NL 155984B
Authority
NL
Netherlands
Prior art keywords
semi
manufacture
metallization pattern
semiconductor device
device provided
Prior art date
Application number
NL7217010.A
Other languages
English (en)
Dutch (nl)
Other versions
NL7217010A (xx
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL7217010A publication Critical patent/NL7217010A/xx
Publication of NL155984B publication Critical patent/NL155984B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/945Special, e.g. metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
NL7217010.A 1971-12-20 1972-12-14 Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een metallisatiepatroon en aldus vervaardigde halfgeleiderinrichting. NL155984B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00209560A US3808108A (en) 1971-12-20 1971-12-20 Semiconductor device fabrication using nickel to mask cathodic etching

Publications (2)

Publication Number Publication Date
NL7217010A NL7217010A (xx) 1973-06-22
NL155984B true NL155984B (nl) 1978-02-15

Family

ID=22779246

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7217010.A NL155984B (nl) 1971-12-20 1972-12-14 Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een metallisatiepatroon en aldus vervaardigde halfgeleiderinrichting.

Country Status (10)

Country Link
US (1) US3808108A (xx)
JP (1) JPS5117871B2 (xx)
BE (1) BE792908A (xx)
CA (1) CA956039A (xx)
CH (1) CH544409A (xx)
DE (1) DE2261337B2 (xx)
FR (1) FR2164684B1 (xx)
IT (1) IT976112B (xx)
NL (1) NL155984B (xx)
SE (1) SE381536B (xx)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2328284A1 (fr) * 1975-10-15 1977-05-13 Labo Electronique Physique Diode fonctionnant dans le domaine des ondes millimetriques et son procede de fabrication
JPS52136590A (en) * 1976-05-11 1977-11-15 Matsushita Electric Ind Co Ltd Production of semiconductor device
CA1109927A (en) * 1978-06-26 1981-09-29 Edmund T. Marciniec Manufacture of thin film thermal print head
US4206541A (en) * 1978-06-26 1980-06-10 Extel Corporation Method of manufacturing thin film thermal print heads
US4232440A (en) * 1979-02-27 1980-11-11 Bell Telephone Laboratories, Incorporated Contact structure for light emitting device
US4375390A (en) * 1982-03-15 1983-03-01 Anderson Nathaniel C Thin film techniques for fabricating narrow track ferrite heads
US4514751A (en) * 1982-12-23 1985-04-30 International Business Machines Corporation Compressively stresses titanium metallurgy for contacting passivated semiconductor devices
AU2002357640A1 (en) 2001-07-24 2003-04-22 Cree, Inc. Insulting gate algan/gan hemt
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US8212290B2 (en) * 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
US8729156B2 (en) 2009-07-17 2014-05-20 Arkema France Polyhydroxyalkanoate composition exhibiting improved impact resistance at low levels of impact modifier
WO2014085241A1 (en) * 2012-11-29 2014-06-05 Corning Incorporated Joining methods for bulk metallic glasses
TWI733069B (zh) * 2017-12-31 2021-07-11 美商羅門哈斯電子材料有限公司 單體、聚合物及包含其的微影組合物

Also Published As

Publication number Publication date
JPS5117871B2 (xx) 1976-06-05
JPS4886473A (xx) 1973-11-15
IT976112B (it) 1974-08-20
US3808108A (en) 1974-04-30
FR2164684A1 (xx) 1973-08-03
NL7217010A (xx) 1973-06-22
CH544409A (de) 1973-11-15
DE2261337A1 (de) 1973-07-26
FR2164684B1 (xx) 1977-04-08
CA956039A (en) 1974-10-08
DE2261337B2 (de) 1977-09-15
BE792908A (fr) 1973-04-16
SE381536B (sv) 1975-12-08

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: WEST ELECTRIC