NL170901C - Werkwijze voor het vervaardigen van een halfgeleiderinrichting. - Google Patents

Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Info

Publication number
NL170901C
NL170901C NLAANVRAGE7104496,A NL7104496A NL170901C NL 170901 C NL170901 C NL 170901C NL 7104496 A NL7104496 A NL 7104496A NL 170901 C NL170901 C NL 170901C
Authority
NL
Netherlands
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
NLAANVRAGE7104496,A
Other languages
English (en)
Other versions
NL7104496A (nl
NL170901B (nl
Inventor
Else Dr Kooi
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE7104496,A priority Critical patent/NL170901C/nl
Priority to DE19722215351 priority patent/DE2215351C3/de
Priority to CH467272A priority patent/CH542513A/de
Priority to SE7204115A priority patent/SE381955B/xx
Priority to GB1502272A priority patent/GB1388486A/en
Priority to BE781538A priority patent/BE781538A/fr
Priority to FR7211541A priority patent/FR2132347B1/fr
Priority to AT283372A priority patent/AT324430B/de
Priority to IT68034/72A priority patent/IT954586B/it
Priority to ES401405A priority patent/ES401405A1/es
Priority to BR721920A priority patent/BR7201920D0/pt
Priority to AR241272A priority patent/AR192354A1/es
Priority to JP47033423A priority patent/JPS51438B1/ja
Priority to CA138,769A priority patent/CA963173A/en
Publication of NL7104496A publication Critical patent/NL7104496A/xx
Priority to US437005A priority patent/US3873383A/en
Priority to US05/458,526 priority patent/US3961356A/en
Priority to ES428726A priority patent/ES428726A1/es
Priority to HK597/76*UA priority patent/HK59776A/xx
Publication of NL170901B publication Critical patent/NL170901B/nl
Application granted granted Critical
Publication of NL170901C publication Critical patent/NL170901C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
NLAANVRAGE7104496,A 1971-04-03 1971-04-03 Werkwijze voor het vervaardigen van een halfgeleiderinrichting. NL170901C (nl)

Priority Applications (18)

Application Number Priority Date Filing Date Title
NLAANVRAGE7104496,A NL170901C (nl) 1971-04-03 1971-04-03 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
DE19722215351 DE2215351C3 (de) 1971-04-03 1972-03-29 Verfahren zur Herstellung eines Halbleiterbauelements
CH467272A CH542513A (de) 1971-04-03 1972-03-29 Halbleiteranordnung und Verfahren zur Herstellung derselben
SE7204115A SE381955B (sv) 1971-04-03 1972-03-29 Halvledaranordning och sett att framstella densamma
GB1502272A GB1388486A (en) 1971-04-03 1972-03-30 Semiconductor device manufacture
IT68034/72A IT954586B (it) 1971-04-03 1972-03-31 Dispositivo semiconduttore e pro cedimento per la sua fabbricazione
FR7211541A FR2132347B1 (nl) 1971-04-03 1972-03-31
AT283372A AT324430B (de) 1971-04-03 1972-03-31 Halbleiteranordnung und verfahren zur herstellung derselben
BE781538A BE781538A (fr) 1971-04-03 1972-03-31 Dispositif semiconducteur et son procede de fabrication
ES401405A ES401405A1 (es) 1971-04-03 1972-04-01 Un dispositivo semiconductor.
AR241272A AR192354A1 (es) 1971-04-03 1972-04-03 Dispositivo semiconductor y metodo de fabricacion del dispositivo semiconductor
JP47033423A JPS51438B1 (nl) 1971-04-03 1972-04-03
BR721920A BR7201920D0 (pt) 1971-04-03 1972-04-03 Dispositivo semicondutor e processo de fabricar o mesmo
CA138,769A CA963173A (en) 1971-04-03 1972-04-04 Semiconductor device and method of manufacturing the semiconductor device
US437005A US3873383A (en) 1971-04-03 1974-01-28 Integrated circuits with oxidation-junction isolation and channel stop
US05/458,526 US3961356A (en) 1971-04-03 1974-04-08 Integrated circuit with oxidation-junction isolation and channel stop
ES428726A ES428726A1 (es) 1971-04-03 1974-07-29 Un metodo de fabricacion de un dispositivo semiconductor.
HK597/76*UA HK59776A (en) 1971-04-03 1976-09-23 Semiconductor device manufacture

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
NLAANVRAGE7104496,A NL170901C (nl) 1971-04-03 1971-04-03 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US23878472A 1972-03-28 1972-03-28
US437005A US3873383A (en) 1971-04-03 1974-01-28 Integrated circuits with oxidation-junction isolation and channel stop
US05/458,526 US3961356A (en) 1971-04-03 1974-04-08 Integrated circuit with oxidation-junction isolation and channel stop

Publications (3)

Publication Number Publication Date
NL7104496A NL7104496A (nl) 1972-10-05
NL170901B NL170901B (nl) 1982-08-02
NL170901C true NL170901C (nl) 1983-01-03

Family

ID=27483791

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7104496,A NL170901C (nl) 1971-04-03 1971-04-03 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Country Status (7)

Country Link
US (2) US3873383A (nl)
AT (1) AT324430B (nl)
CA (1) CA963173A (nl)
CH (1) CH542513A (nl)
FR (1) FR2132347B1 (nl)
GB (1) GB1388486A (nl)
NL (1) NL170901C (nl)

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US4005453A (en) * 1971-04-14 1977-01-25 U.S. Philips Corporation Semiconductor device with isolated circuit elements and method of making
US3992232A (en) * 1973-08-06 1976-11-16 Hitachi, Ltd. Method of manufacturing semiconductor device having oxide isolation structure and guard ring
GB1457139A (en) * 1973-09-27 1976-12-01 Hitachi Ltd Method of manufacturing semiconductor device
US3979765A (en) * 1974-03-07 1976-09-07 Signetics Corporation Silicon gate MOS device and method
US4023195A (en) * 1974-10-23 1977-05-10 Smc Microsystems Corporation MOS field-effect transistor structure with mesa-like contact and gate areas and selectively deeper junctions
US3993513A (en) * 1974-10-29 1976-11-23 Fairchild Camera And Instrument Corporation Combined method for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors and the resulting structures
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
US3967002A (en) * 1974-12-31 1976-06-29 International Business Machines Corporation Method for making high density magnetic bubble domain system
DE2510593C3 (de) * 1975-03-11 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Integrierte Halbleiter-Schaltungsanordnung
US4013484A (en) * 1976-02-25 1977-03-22 Intel Corporation High density CMOS process
US4137109A (en) * 1976-04-12 1979-01-30 Texas Instruments Incorporated Selective diffusion and etching method for isolation of integrated logic circuit
US4047217A (en) * 1976-04-12 1977-09-06 Fairchild Camera And Instrument Corporation High-gain, high-voltage transistor for linear integrated circuits
US4197143A (en) * 1976-09-03 1980-04-08 Fairchild Camera & Instrument Corporation Method of making a junction field-effect transistor utilizing a conductive buried region
US4149177A (en) * 1976-09-03 1979-04-10 Fairchild Camera And Instrument Corporation Method of fabricating conductive buried regions in integrated circuits and the resulting structures
US4198649A (en) * 1976-09-03 1980-04-15 Fairchild Camera And Instrument Corporation Memory cell structure utilizing conductive buried regions
US4064527A (en) * 1976-09-20 1977-12-20 Intersil, Inc. Integrated circuit having a buried load device
JPS5356972A (en) * 1976-11-01 1978-05-23 Mitsubishi Electric Corp Mesa type semiconductor device
US4149906A (en) * 1977-04-29 1979-04-17 International Business Machines Corporation Process for fabrication of merged transistor logic (MTL) cells
US4316319A (en) * 1977-10-25 1982-02-23 International Business Machines Corporation Method for making a high sheet resistance structure for high density integrated circuits
US4140558A (en) * 1978-03-02 1979-02-20 Bell Telephone Laboratories, Incorporated Isolation of integrated circuits utilizing selective etching and diffusion
JPS5951743B2 (ja) * 1978-11-08 1984-12-15 株式会社日立製作所 半導体集積装置
JPS5852339B2 (ja) * 1979-03-20 1983-11-22 富士通株式会社 半導体装置の製造方法
JPS55153342A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Semiconductor device and its manufacture
US4289550A (en) * 1979-05-25 1981-09-15 Raytheon Company Method of forming closely spaced device regions utilizing selective etching and diffusion
US4261763A (en) * 1979-10-01 1981-04-14 Burroughs Corporation Fabrication of integrated circuits employing only ion implantation for all dopant layers
JPS5673446A (en) * 1979-11-21 1981-06-18 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4373965A (en) * 1980-12-22 1983-02-15 Ncr Corporation Suppression of parasitic sidewall transistors in locos structures
US4824797A (en) * 1985-10-31 1989-04-25 International Business Machines Corporation Self-aligned channel stop
DE4119904A1 (de) * 1991-06-17 1992-12-24 Telefunken Electronic Gmbh Halbleiteranordnung
US6087677A (en) * 1997-11-10 2000-07-11 Integrated Silicon Solutions Inc. High density self-aligned antifuse
DE19840032C1 (de) * 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
US6819089B2 (en) * 2001-11-09 2004-11-16 Infineon Technologies Ag Power factor correction circuit with high-voltage semiconductor component
US6828609B2 (en) * 2001-11-09 2004-12-07 Infineon Technologies Ag High-voltage semiconductor component

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GB1095413A (nl) * 1964-12-24
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
NL159817B (nl) * 1966-10-05 1979-03-15 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
NL152707B (nl) * 1967-06-08 1977-03-15 Philips Nv Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.
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NL169936C (nl) * 1970-07-10 1982-09-01 Philips Nv Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
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US3796613A (en) * 1971-06-18 1974-03-12 Ibm Method of forming dielectric isolation for high density pedestal semiconductor devices

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Publication number Publication date
NL7104496A (nl) 1972-10-05
US3873383A (en) 1975-03-25
NL170901B (nl) 1982-08-02
FR2132347B1 (nl) 1977-08-26
DE2215351A1 (de) 1972-10-12
US3961356A (en) 1976-06-01
CH542513A (de) 1973-11-15
AT324430B (de) 1975-08-25
FR2132347A1 (nl) 1972-11-17
CA963173A (en) 1975-02-18
GB1388486A (en) 1975-03-26
DE2215351B2 (de) 1977-05-05

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