NL159817B - Werkwijze ter vervaardiging van een halfgeleiderinrichting. - Google Patents
Werkwijze ter vervaardiging van een halfgeleiderinrichting.Info
- Publication number
- NL159817B NL159817B NL7002384A NL7002384A NL159817B NL 159817 B NL159817 B NL 159817B NL 7002384 A NL7002384 A NL 7002384A NL 7002384 A NL7002384 A NL 7002384A NL 159817 B NL159817 B NL 159817B
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- manufacture
- conductor device
- conductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
Priority Applications (16)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7002384A NL159817B (nl) | 1966-10-05 | 1970-02-19 | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
NL7010208A NL7010208A (nl) | 1966-10-05 | 1970-07-10 | |
DE19712105178 DE2105178C3 (de) | 1966-10-05 | 1971-02-04 | Integrierte Halbleiterschaltung |
CA105325A CA920281A (en) | 1970-02-19 | 1971-02-15 | Method of manufacturing a semiconductor device and semiconductor device obtained by using the method |
CH222571A CH526858A (de) | 1966-10-05 | 1971-02-16 | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung |
IT2062271A IT976361B (it) | 1970-02-19 | 1971-02-16 | Metodo di fabbricazione di un dispo sitivo semiconduttore e dispositivo semiconduttore ottenuto con l ausi lio di tale metodo |
AT130671A AT339959B (de) | 1966-10-05 | 1971-02-16 | Verfahren zum herstellen einer integrierten monolithischen halbleiteranordnung mit versenkter isolierschicht |
SE197871A SE372139B (nl) | 1966-10-05 | 1971-02-16 | |
BE763112A BE763112R (fr) | 1970-02-19 | 1971-02-17 | Dispositif semiconducteur et procede pour sa |
ES388379A ES388379A2 (es) | 1970-02-19 | 1971-02-17 | Un metodo de fabricar un dispositivo semiconductor. |
BR108971A BR7101089D0 (pt) | 1970-02-19 | 1971-02-17 | Processo de fabricacao de dispositivo semicondutor e semicondutor obtido por esse processo |
FR7105551A FR2081017A2 (en) | 1966-10-05 | 1971-02-18 | Fabrication of a semiconductor device |
DE19712133980 DE2133980C3 (de) | 1966-10-05 | 1971-07-08 | Verfahren zur Herstellung einer integrierten Halbleiterschaltung |
JP14123875A JPS5176087A (ja) | 1970-02-19 | 1975-11-27 | Shusekihandotaisochi |
JP13535380A JPS56153748A (en) | 1970-02-19 | 1980-09-30 | Integrated semiconductor device |
JP6715583A JPS58212148A (ja) | 1970-02-19 | 1983-04-18 | 集積半導体装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL666614016A NL153374B (nl) | 1966-10-05 | 1966-10-05 | Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze. |
NL7002384A NL159817B (nl) | 1966-10-05 | 1970-02-19 | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
Publications (2)
Publication Number | Publication Date |
---|---|
NL7002384A NL7002384A (nl) | 1971-08-23 |
NL159817B true NL159817B (nl) | 1979-03-15 |
Family
ID=26644100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7002384A NL159817B (nl) | 1966-10-05 | 1970-02-19 | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
Country Status (5)
Country | Link |
---|---|
AT (1) | AT339959B (nl) |
DE (1) | DE2105178C3 (nl) |
FR (1) | FR2081017A2 (nl) |
NL (1) | NL159817B (nl) |
SE (1) | SE372139B (nl) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL170901C (nl) * | 1971-04-03 | 1983-01-03 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
US4044454A (en) * | 1975-04-16 | 1977-08-30 | Ibm Corporation | Method for forming integrated circuit regions defined by recessed dielectric isolation |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3254277A (en) * | 1963-02-27 | 1966-05-31 | United Aircraft Corp | Integrated circuit with component defining groove |
US3411051A (en) * | 1964-12-29 | 1968-11-12 | Texas Instruments Inc | Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface |
US3386865A (en) * | 1965-05-10 | 1968-06-04 | Ibm | Process of making planar semiconductor devices isolated by encapsulating oxide filled channels |
NL153374B (nl) * | 1966-10-05 | 1977-05-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze. |
NL6815286A (nl) * | 1967-10-28 | 1969-05-01 | ||
US3488564A (en) * | 1968-04-01 | 1970-01-06 | Fairchild Camera Instr Co | Planar epitaxial resistors |
US3649386A (en) * | 1968-04-23 | 1972-03-14 | Bell Telephone Labor Inc | Method of fabricating semiconductor devices |
-
1970
- 1970-02-19 NL NL7002384A patent/NL159817B/nl unknown
-
1971
- 1971-02-04 DE DE19712105178 patent/DE2105178C3/de not_active Expired
- 1971-02-16 AT AT130671A patent/AT339959B/de not_active IP Right Cessation
- 1971-02-16 SE SE197871A patent/SE372139B/xx unknown
- 1971-02-18 FR FR7105551A patent/FR2081017A2/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
DE2105178B2 (de) | 1979-07-12 |
AT339959B (de) | 1977-11-25 |
FR2081017A2 (en) | 1971-11-26 |
ATA130671A (de) | 1977-03-15 |
DE2105178A1 (de) | 1971-09-02 |
SE372139B (nl) | 1974-12-09 |
FR2081017B2 (nl) | 1976-03-19 |
DE2105178C3 (de) | 1983-12-22 |
NL7002384A (nl) | 1971-08-23 |
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Legal Events
Date | Code | Title | Description |
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NZ80 | Patents of addition are not granted since law of 1.1.78 |
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