NL159817B - PROCESS FOR THE MANUFACTURE OF A SEMI-CONDUCTOR DEVICE. - Google Patents
PROCESS FOR THE MANUFACTURE OF A SEMI-CONDUCTOR DEVICE.Info
- Publication number
- NL159817B NL159817B NL7002384A NL7002384A NL159817B NL 159817 B NL159817 B NL 159817B NL 7002384 A NL7002384 A NL 7002384A NL 7002384 A NL7002384 A NL 7002384A NL 159817 B NL159817 B NL 159817B
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- manufacture
- conductor device
- conductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
Priority Applications (16)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7002384A NL159817B (en) | 1966-10-05 | 1970-02-19 | PROCESS FOR THE MANUFACTURE OF A SEMI-CONDUCTOR DEVICE. |
NL7010208A NL7010208A (en) | 1966-10-05 | 1970-07-10 | |
DE19712105178 DE2105178C3 (en) | 1966-10-05 | 1971-02-04 | Integrated semiconductor circuit |
CA105325A CA920281A (en) | 1970-02-19 | 1971-02-15 | Method of manufacturing a semiconductor device and semiconductor device obtained by using the method |
AT130671A AT339959B (en) | 1966-10-05 | 1971-02-16 | PROCESS FOR PRODUCING AN INTEGRATED MONOLITHIC SEMICONDUCTOR ARRANGEMENT WITH A RECESSED INSULATING LAYER |
CH222571A CH526858A (en) | 1966-10-05 | 1971-02-16 | Fabrication of a semiconductor device |
IT2062271A IT976361B (en) | 1970-02-19 | 1971-02-16 | MANUFACTURING METHOD OF A SEMICONDUCTING SITIVE DEVICE AND A SEMICONDUCTING DEVICE OBTAINED WITH THE AID OF THIS METHOD |
SE197871A SE372139B (en) | 1966-10-05 | 1971-02-16 | |
ES388379A ES388379A2 (en) | 1970-02-19 | 1971-02-17 | Integrated semiconductor device |
BE763112A BE763112R (en) | 1970-02-19 | 1971-02-17 | SEMICONDUCTOR DEVICE AND METHOD FOR ITS |
BR108971A BR7101089D0 (en) | 1970-02-19 | 1971-02-17 | SEMICONDUCTOR AND SEMICONDUCTOR DEVICE MANUFACTURING PROCESS OBTAINED BY THAT PROCESS |
FR7105551A FR2081017A2 (en) | 1966-10-05 | 1971-02-18 | Fabrication of a semiconductor device |
DE19712133980 DE2133980C3 (en) | 1966-10-05 | 1971-07-08 | Method for manufacturing an integrated semiconductor circuit |
JP14123875A JPS5176087A (en) | 1970-02-19 | 1975-11-27 | SHUSEKIHANDOTAISOCHI |
JP13535380A JPS56153748A (en) | 1970-02-19 | 1980-09-30 | Integrated semiconductor device |
JP6715583A JPS58212148A (en) | 1970-02-19 | 1983-04-18 | Integrated semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL666614016A NL153374B (en) | 1966-10-05 | 1966-10-05 | PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE PROVIDED WITH AN OXIDE LAYER AND SEMI-CONDUCTOR DEVICE MANUFACTURED ACCORDING TO THE PROCEDURE. |
NL7002384A NL159817B (en) | 1966-10-05 | 1970-02-19 | PROCESS FOR THE MANUFACTURE OF A SEMI-CONDUCTOR DEVICE. |
Publications (2)
Publication Number | Publication Date |
---|---|
NL7002384A NL7002384A (en) | 1971-08-23 |
NL159817B true NL159817B (en) | 1979-03-15 |
Family
ID=26644100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7002384A NL159817B (en) | 1966-10-05 | 1970-02-19 | PROCESS FOR THE MANUFACTURE OF A SEMI-CONDUCTOR DEVICE. |
Country Status (5)
Country | Link |
---|---|
AT (1) | AT339959B (en) |
DE (1) | DE2105178C3 (en) |
FR (1) | FR2081017A2 (en) |
NL (1) | NL159817B (en) |
SE (1) | SE372139B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL170901C (en) * | 1971-04-03 | 1983-01-03 | Philips Nv | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
US4044454A (en) * | 1975-04-16 | 1977-08-30 | Ibm Corporation | Method for forming integrated circuit regions defined by recessed dielectric isolation |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3254277A (en) * | 1963-02-27 | 1966-05-31 | United Aircraft Corp | Integrated circuit with component defining groove |
US3411051A (en) * | 1964-12-29 | 1968-11-12 | Texas Instruments Inc | Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface |
US3386865A (en) * | 1965-05-10 | 1968-06-04 | Ibm | Process of making planar semiconductor devices isolated by encapsulating oxide filled channels |
NL153374B (en) * | 1966-10-05 | 1977-05-16 | Philips Nv | PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE PROVIDED WITH AN OXIDE LAYER AND SEMI-CONDUCTOR DEVICE MANUFACTURED ACCORDING TO THE PROCEDURE. |
NL6815286A (en) * | 1967-10-28 | 1969-05-01 | ||
US3488564A (en) * | 1968-04-01 | 1970-01-06 | Fairchild Camera Instr Co | Planar epitaxial resistors |
US3649386A (en) * | 1968-04-23 | 1972-03-14 | Bell Telephone Labor Inc | Method of fabricating semiconductor devices |
-
1970
- 1970-02-19 NL NL7002384A patent/NL159817B/en unknown
-
1971
- 1971-02-04 DE DE19712105178 patent/DE2105178C3/en not_active Expired
- 1971-02-16 AT AT130671A patent/AT339959B/en not_active IP Right Cessation
- 1971-02-16 SE SE197871A patent/SE372139B/xx unknown
- 1971-02-18 FR FR7105551A patent/FR2081017A2/en active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2081017A2 (en) | 1971-11-26 |
NL7002384A (en) | 1971-08-23 |
DE2105178C3 (en) | 1983-12-22 |
DE2105178A1 (en) | 1971-09-02 |
SE372139B (en) | 1974-12-09 |
FR2081017B2 (en) | 1976-03-19 |
AT339959B (en) | 1977-11-25 |
DE2105178B2 (en) | 1979-07-12 |
ATA130671A (en) | 1977-03-15 |
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Legal Events
Date | Code | Title | Description |
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NZ80 | Patents of addition are not granted since law of 1.1.78 |
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