NL158024B - Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze. - Google Patents

Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.

Info

Publication number
NL158024B
NL158024B NL6706734.A NL6706734A NL158024B NL 158024 B NL158024 B NL 158024B NL 6706734 A NL6706734 A NL 6706734A NL 158024 B NL158024 B NL 158024B
Authority
NL
Netherlands
Prior art keywords
semiconductor device
procedure
manufacture
applying
device obtained
Prior art date
Application number
NL6706734.A
Other languages
English (en)
Other versions
NL6706734A (nl
Inventor
Else Dr Kooi
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL6706734.A priority Critical patent/NL158024B/nl
Priority to DE1764155A priority patent/DE1764155C3/de
Priority to US722071A priority patent/US3602981A/en
Priority to DK217868AA priority patent/DK118413B/da
Priority to AT452068A priority patent/AT322632B/de
Priority to CH699168A priority patent/CH505470A/de
Priority to BR198981/68A priority patent/BR6898981D0/pt
Priority to SE06372/68A priority patent/SE350151B/xx
Priority to GB1228854D priority patent/GB1228854A/en
Priority to ES353792A priority patent/ES353792A1/es
Priority to BE715098D priority patent/BE715098A/xx
Priority to FR1564348D priority patent/FR1564348A/fr
Publication of NL6706734A publication Critical patent/NL6706734A/xx
Publication of NL158024B publication Critical patent/NL158024B/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
NL6706734.A 1967-05-13 1967-05-13 Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze. NL158024B (nl)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NL6706734.A NL158024B (nl) 1967-05-13 1967-05-13 Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.
DE1764155A DE1764155C3 (de) 1967-05-13 1968-04-11 Verfahren zum Herstellen eines Halbleiterbauelementes aus einem Siliciumkörper
US722071A US3602981A (en) 1967-05-13 1968-04-17 Method of manufacturing a semiconductor device and semiconductor device obtained by carrying out said method
DK217868AA DK118413B (da) 1967-05-13 1968-05-09 Fremgangsmåde til fremstilling af en halvlederkomponent.
AT452068A AT322632B (de) 1967-05-13 1968-05-10 Verfahren zur herstellung einer integrierten halbleitervorrichtung
CH699168A CH505470A (de) 1967-05-13 1968-05-10 Verfahren zur Herstellung einer Halbleitervorrichtung und gemäss diesem Verfahren hergestellte Halbleitervorrichtung
BR198981/68A BR6898981D0 (pt) 1967-05-13 1968-05-10 Processo de fabricacao de dispositivos semicondutores obtidos por intermedio desse referido processormedio desse referido peocesso
SE06372/68A SE350151B (nl) 1967-05-13 1968-05-10
GB1228854D GB1228854A (nl) 1967-05-13 1968-05-10
ES353792A ES353792A1 (es) 1967-05-13 1968-05-11 Metodo de fabricacion de un dispositivo semiconductor.
BE715098D BE715098A (nl) 1967-05-13 1968-05-13
FR1564348D FR1564348A (nl) 1967-05-13 1968-05-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6706734.A NL158024B (nl) 1967-05-13 1967-05-13 Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.

Publications (2)

Publication Number Publication Date
NL6706734A NL6706734A (nl) 1968-11-14
NL158024B true NL158024B (nl) 1978-09-15

Family

ID=19800122

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6706734.A NL158024B (nl) 1967-05-13 1967-05-13 Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.

Country Status (12)

Country Link
US (1) US3602981A (nl)
AT (1) AT322632B (nl)
BE (1) BE715098A (nl)
BR (1) BR6898981D0 (nl)
CH (1) CH505470A (nl)
DE (1) DE1764155C3 (nl)
DK (1) DK118413B (nl)
ES (1) ES353792A1 (nl)
FR (1) FR1564348A (nl)
GB (1) GB1228854A (nl)
NL (1) NL158024B (nl)
SE (1) SE350151B (nl)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2039141A1 (de) * 1969-08-22 1971-02-25 Molekularelektronik Verfahren zum Herstellen integrierter Halbleiteranordnungen mit komplementaeren Bipolartransistoren
US3859180A (en) * 1971-01-06 1975-01-07 Texas Instruments Inc Method for encapsulating discrete semiconductor chips
US3739462A (en) * 1971-01-06 1973-06-19 Texas Instruments Inc Method for encapsulating discrete semiconductor chips
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
FR2188304B1 (nl) * 1972-06-15 1977-07-22 Commissariat Energie Atomique
US3944447A (en) * 1973-03-12 1976-03-16 Ibm Corporation Method for fabrication of integrated circuit structure with full dielectric isolation utilizing selective oxidation
US3922705A (en) * 1973-06-04 1975-11-25 Gen Electric Dielectrically isolated integral silicon diaphram or other semiconductor product
DE2460269A1 (de) * 1974-12-19 1976-07-01 Siemens Ag Bipolares transistorpaar mit elektrisch leitend miteinander verbundenen basisgebieten und verfahren zur herstellung des transistorpaares
JPS5252582A (en) * 1975-10-25 1977-04-27 Toshiba Corp Device and production for semiconductor
JPS5317069A (en) * 1976-07-30 1978-02-16 Fujitsu Ltd Semiconductor device and its production
US4814856A (en) * 1986-05-07 1989-03-21 Kulite Semiconductor Products, Inc. Integral transducer structures employing high conductivity surface features
US5426072A (en) * 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
US5488012A (en) * 1993-10-18 1996-01-30 The Regents Of The University Of California Silicon on insulator with active buried regions
WO1998059317A1 (fr) * 1997-06-23 1998-12-30 Rohm Co., Ltd. Module pour carte a circuit integre, carte a circuit integre, et procede de fabrication d'un tel module
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6500694B1 (en) * 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
US11887945B2 (en) * 2020-09-30 2024-01-30 Wolfspeed, Inc. Semiconductor device with isolation and/or protection structures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2875505A (en) * 1952-12-11 1959-03-03 Bell Telephone Labor Inc Semiconductor translating device
US3158788A (en) * 1960-08-15 1964-11-24 Fairchild Camera Instr Co Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material
NL297601A (nl) * 1962-09-07 Rca Corp
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3355636A (en) * 1965-06-29 1967-11-28 Rca Corp High power, high frequency transistor
US3442011A (en) * 1965-06-30 1969-05-06 Texas Instruments Inc Method for isolating individual devices in an integrated circuit monolithic bar
US3390022A (en) * 1965-06-30 1968-06-25 North American Rockwell Semiconductor device and process for producing same

Also Published As

Publication number Publication date
DE1764155B2 (de) 1981-04-09
ES353792A1 (es) 1970-02-01
GB1228854A (nl) 1971-04-21
BR6898981D0 (pt) 1973-01-11
BE715098A (nl) 1968-11-13
CH505470A (de) 1971-03-31
AT322632B (de) 1975-05-26
SE350151B (nl) 1972-10-16
DE1764155A1 (de) 1971-05-13
FR1564348A (nl) 1969-04-18
NL6706734A (nl) 1968-11-14
DE1764155C3 (de) 1981-11-26
DK118413B (da) 1970-08-17
US3602981A (en) 1971-09-07

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Legal Events

Date Code Title Description
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: PHILIPS

V4 Lapsed because of reaching the maximum lifetime of a patent