CH546483A - Halbleiteranordnung. - Google Patents
Halbleiteranordnung.Info
- Publication number
- CH546483A CH546483A CH546483DA CH546483A CH 546483 A CH546483 A CH 546483A CH 546483D A CH546483D A CH 546483DA CH 546483 A CH546483 A CH 546483A
- Authority
- CH
- Switzerland
- Prior art keywords
- semi
- conductor arrangement
- conductor
- arrangement
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7109139A NL7109139A (de) | 1971-07-02 | 1971-07-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH546483A true CH546483A (de) | 1974-02-28 |
Family
ID=19813531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH546483D CH546483A (de) | 1971-07-02 | 1972-06-29 | Halbleiteranordnung. |
Country Status (12)
Country | Link |
---|---|
JP (1) | JPS5231154B1 (de) |
AU (1) | AU4397372A (de) |
BE (1) | BE785747A (de) |
CA (1) | CA963174A (de) |
CH (1) | CH546483A (de) |
DE (1) | DE2231521C2 (de) |
ES (1) | ES404386A1 (de) |
FR (1) | FR2144741B1 (de) |
GB (1) | GB1394086A (de) |
IT (1) | IT959277B (de) |
NL (1) | NL7109139A (de) |
SE (1) | SE377864B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0181002A2 (de) * | 1984-11-09 | 1986-05-14 | Hitachi, Ltd. | Halbleiterbauelement mit hoher Durchschlagspannung |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2011178B (en) * | 1977-12-15 | 1982-03-17 | Philips Electronic Associated | Fieldeffect devices |
JPS55140673A (en) * | 1979-04-14 | 1980-11-04 | Yamaha Motor Co Ltd | Rear arm mount construction |
DE2944937A1 (de) * | 1979-11-07 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement |
US4947232A (en) * | 1980-03-22 | 1990-08-07 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
JPS56169369A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
JPS56169368A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
DE3520599A1 (de) * | 1984-06-15 | 1985-12-19 | Rca Corp., Princeton, N.J. | Halbleiterbauelement |
JP2615151B2 (ja) * | 1988-08-19 | 1997-05-28 | 株式会社村田製作所 | チップ型コイル及びその製造方法 |
US5382826A (en) * | 1993-12-21 | 1995-01-17 | Xerox Corporation | Stacked high voltage transistor unit |
DE102016120300A1 (de) | 2016-10-25 | 2018-04-26 | Infineon Technologies Austria Ag | Hochspannungsabschlussstruktur einer Leistungshalbleitervorrichtung |
DE102016120301A1 (de) * | 2016-10-25 | 2018-04-26 | Infineon Technologies Ag | Leistungshalbleitervorrichtungs-Abschlussstruktur |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1260618A (en) * | 1969-08-09 | 1972-01-19 | Soc Gen Semiconduttori Spa | Planar junctions with integrated resistor, for high voltages |
-
0
- BE BE785747D patent/BE785747A/xx unknown
-
1971
- 1971-07-02 NL NL7109139A patent/NL7109139A/xx unknown
-
1972
- 1972-06-28 AU AU43973/72A patent/AU4397372A/en not_active Expired
- 1972-06-28 IT IT6909272A patent/IT959277B/it active
- 1972-06-28 DE DE19722231521 patent/DE2231521C2/de not_active Expired
- 1972-06-28 CA CA145,874A patent/CA963174A/en not_active Expired
- 1972-06-29 JP JP6453172A patent/JPS5231154B1/ja active Pending
- 1972-06-29 GB GB3042772A patent/GB1394086A/en not_active Expired
- 1972-06-29 SE SE857272A patent/SE377864B/xx unknown
- 1972-06-29 CH CH546483D patent/CH546483A/de not_active IP Right Cessation
- 1972-06-30 ES ES404386A patent/ES404386A1/es not_active Expired
- 1972-07-03 FR FR7224006A patent/FR2144741B1/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0181002A2 (de) * | 1984-11-09 | 1986-05-14 | Hitachi, Ltd. | Halbleiterbauelement mit hoher Durchschlagspannung |
EP0181002A3 (en) * | 1984-11-09 | 1988-09-21 | Hitachi, Ltd. | Semiconductor device having high breakdown voltage |
Also Published As
Publication number | Publication date |
---|---|
DE2231521A1 (de) | 1973-01-18 |
DE2231521C2 (de) | 1982-05-13 |
ES404386A1 (es) | 1975-06-01 |
NL7109139A (de) | 1973-01-04 |
FR2144741B1 (de) | 1977-08-26 |
AU4397372A (en) | 1974-01-03 |
IT959277B (it) | 1973-11-10 |
BE785747A (fr) | 1973-01-02 |
CA963174A (en) | 1975-02-18 |
FR2144741A1 (de) | 1973-02-16 |
JPS5231154B1 (de) | 1977-08-12 |
SE377864B (de) | 1975-07-28 |
GB1394086A (en) | 1975-05-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |