CA963174A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
CA963174A
CA963174A CA145,874A CA145874A CA963174A CA 963174 A CA963174 A CA 963174A CA 145874 A CA145874 A CA 145874A CA 963174 A CA963174 A CA 963174A
Authority
CA
Canada
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA145,874A
Other versions
CA145874S (en
Inventor
Cornelis A. Bosselaar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA963174A publication Critical patent/CA963174A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • H01L29/405Resistive arrangements, e.g. resistive or semi-insulating field plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7322Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/8611Planar PN junction diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CA145,874A 1971-07-02 1972-06-28 Semiconductor device Expired CA963174A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7109139A NL7109139A (en) 1971-07-02 1971-07-02

Publications (1)

Publication Number Publication Date
CA963174A true CA963174A (en) 1975-02-18

Family

ID=19813531

Family Applications (1)

Application Number Title Priority Date Filing Date
CA145,874A Expired CA963174A (en) 1971-07-02 1972-06-28 Semiconductor device

Country Status (12)

Country Link
JP (1) JPS5231154B1 (en)
AU (1) AU4397372A (en)
BE (1) BE785747A (en)
CA (1) CA963174A (en)
CH (1) CH546483A (en)
DE (1) DE2231521C2 (en)
ES (1) ES404386A1 (en)
FR (1) FR2144741B1 (en)
GB (1) GB1394086A (en)
IT (1) IT959277B (en)
NL (1) NL7109139A (en)
SE (1) SE377864B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4757362A (en) * 1980-05-30 1988-07-12 Sharp Kabushiki Kaisha High voltage MOS transistor
US4766474A (en) * 1980-05-30 1988-08-23 Sharp Kabushiki Kiasha High voltage MOS transistor
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
US10388722B2 (en) 2016-10-25 2019-08-20 Infineon Technologies Ag Power semiconductor device termination structure
US10600862B2 (en) 2016-10-25 2020-03-24 Infineon Technologies Austria Ag High voltage termination structure of a power semiconductor device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2011178B (en) * 1977-12-15 1982-03-17 Philips Electronic Associated Fieldeffect devices
JPS55140673A (en) * 1979-04-14 1980-11-04 Yamaha Motor Co Ltd Rear arm mount construction
DE2944937A1 (en) * 1979-11-07 1981-06-04 Siemens AG, 1000 Berlin und 8000 München SEMICONDUCTOR COMPONENT
DE3520599A1 (en) * 1984-06-15 1985-12-19 Rca Corp., Princeton, N.J. Semiconductor component
JPS61114574A (en) * 1984-11-09 1986-06-02 Hitachi Ltd Semiconductor device
JP2615151B2 (en) * 1988-08-19 1997-05-28 株式会社村田製作所 Chip coil and method of manufacturing the same
US5382826A (en) * 1993-12-21 1995-01-17 Xerox Corporation Stacked high voltage transistor unit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1260618A (en) * 1969-08-09 1972-01-19 Soc Gen Semiconduttori Spa Planar junctions with integrated resistor, for high voltages

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
US4757362A (en) * 1980-05-30 1988-07-12 Sharp Kabushiki Kaisha High voltage MOS transistor
US4766474A (en) * 1980-05-30 1988-08-23 Sharp Kabushiki Kiasha High voltage MOS transistor
US10388722B2 (en) 2016-10-25 2019-08-20 Infineon Technologies Ag Power semiconductor device termination structure
US10600862B2 (en) 2016-10-25 2020-03-24 Infineon Technologies Austria Ag High voltage termination structure of a power semiconductor device

Also Published As

Publication number Publication date
CH546483A (en) 1974-02-28
ES404386A1 (en) 1975-06-01
DE2231521C2 (en) 1982-05-13
IT959277B (en) 1973-11-10
FR2144741A1 (en) 1973-02-16
FR2144741B1 (en) 1977-08-26
BE785747A (en) 1973-01-02
DE2231521A1 (en) 1973-01-18
AU4397372A (en) 1974-01-03
JPS5231154B1 (en) 1977-08-12
SE377864B (en) 1975-07-28
NL7109139A (en) 1973-01-04
GB1394086A (en) 1975-05-14

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