CA1000404A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
CA1000404A
CA1000404A CA158,958A CA158958A CA1000404A CA 1000404 A CA1000404 A CA 1000404A CA 158958 A CA158958 A CA 158958A CA 1000404 A CA1000404 A CA 1000404A
Authority
CA
Canada
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA158,958A
Other versions
CA158958S (en
Inventor
Susumu Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of CA1000404A publication Critical patent/CA1000404A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356008Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/69IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
CA158,958A 1971-12-17 1972-12-15 Semiconductor memory device Expired CA1000404A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10308271A JPS4866943A (en) 1971-12-17 1971-12-17
JP10308371A JPS5144869B2 (en) 1971-12-17 1971-12-17

Publications (1)

Publication Number Publication Date
CA1000404A true CA1000404A (en) 1976-11-23

Family

ID=26443741

Family Applications (1)

Application Number Title Priority Date Filing Date
CA158,958A Expired CA1000404A (en) 1971-12-17 1972-12-15 Semiconductor memory device

Country Status (6)

Country Link
JP (2) JPS4866943A (en)
CA (1) CA1000404A (en)
DE (1) DE2261522C3 (en)
FR (1) FR2163682B1 (en)
GB (1) GB1391640A (en)
NL (1) NL163064C (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53150469U (en) * 1977-05-02 1978-11-27
JPS5484575U (en) * 1977-11-29 1979-06-15
JPS555478U (en) * 1978-06-26 1980-01-14
JPS617816U (en) * 1984-06-19 1986-01-17 松下電器産業株式会社 push button device
JPH06326323A (en) * 1993-05-14 1994-11-25 Nec Corp Nonvolatile tunnel transistor and memory circuit
US6303940B1 (en) 1999-01-26 2001-10-16 Agere Systems Guardian Corp. Charge injection transistor using high-k dielectric barrier layer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2791761A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Electrical switching and storage
CA813537A (en) * 1967-10-17 1969-05-20 Radio Corporation Of America Semiconductor memory device

Also Published As

Publication number Publication date
DE2261522B2 (en) 1977-07-07
JPS4866944A (en) 1973-09-13
FR2163682B1 (en) 1976-10-29
JPS4866943A (en) 1973-09-13
DE2261522C3 (en) 1982-03-04
GB1391640A (en) 1975-04-23
NL163064B (en) 1980-02-15
NL7217144A (en) 1973-06-19
DE2261522A1 (en) 1973-07-12
JPS5144869B2 (en) 1976-12-01
NL163064C (en) 1980-07-15
FR2163682A1 (en) 1973-07-27

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