CA1000404A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- CA1000404A CA1000404A CA158,958A CA158958A CA1000404A CA 1000404 A CA1000404 A CA 1000404A CA 158958 A CA158958 A CA 158958A CA 1000404 A CA1000404 A CA 1000404A
- Authority
- CA
- Canada
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10308271A JPS4866943A (en) | 1971-12-17 | 1971-12-17 | |
| JP10308371A JPS5144869B2 (en) | 1971-12-17 | 1971-12-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1000404A true CA1000404A (en) | 1976-11-23 |
Family
ID=26443741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA158,958A Expired CA1000404A (en) | 1971-12-17 | 1972-12-15 | Semiconductor memory device |
Country Status (6)
| Country | Link |
|---|---|
| JP (2) | JPS4866943A (en) |
| CA (1) | CA1000404A (en) |
| DE (1) | DE2261522C3 (en) |
| FR (1) | FR2163682B1 (en) |
| GB (1) | GB1391640A (en) |
| NL (1) | NL163064C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53150469U (en) * | 1977-05-02 | 1978-11-27 | ||
| JPS5484575U (en) * | 1977-11-29 | 1979-06-15 | ||
| JPS555478U (en) * | 1978-06-26 | 1980-01-14 | ||
| JPS617816U (en) * | 1984-06-19 | 1986-01-17 | 松下電器産業株式会社 | push button device |
| JPH06326323A (en) * | 1993-05-14 | 1994-11-25 | Nec Corp | Nonvolatile tunnel transistor and memory circuit |
| US6303940B1 (en) | 1999-01-26 | 2001-10-16 | Agere Systems Guardian Corp. | Charge injection transistor using high-k dielectric barrier layer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2791761A (en) * | 1955-02-18 | 1957-05-07 | Bell Telephone Labor Inc | Electrical switching and storage |
| CA813537A (en) * | 1967-10-17 | 1969-05-20 | Radio Corporation Of America | Semiconductor memory device |
-
1971
- 1971-12-17 JP JP10308271A patent/JPS4866943A/ja active Pending
- 1971-12-17 JP JP10308371A patent/JPS5144869B2/ja not_active Expired
-
1972
- 1972-12-14 GB GB5776672A patent/GB1391640A/en not_active Expired
- 1972-12-15 DE DE2261522A patent/DE2261522C3/en not_active Expired
- 1972-12-15 FR FR7244780A patent/FR2163682B1/fr not_active Expired
- 1972-12-15 CA CA158,958A patent/CA1000404A/en not_active Expired
- 1972-12-15 NL NL7217144.A patent/NL163064C/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2261522B2 (en) | 1977-07-07 |
| JPS4866944A (en) | 1973-09-13 |
| FR2163682B1 (en) | 1976-10-29 |
| JPS4866943A (en) | 1973-09-13 |
| DE2261522C3 (en) | 1982-03-04 |
| GB1391640A (en) | 1975-04-23 |
| NL163064B (en) | 1980-02-15 |
| NL7217144A (en) | 1973-06-19 |
| DE2261522A1 (en) | 1973-07-12 |
| JPS5144869B2 (en) | 1976-12-01 |
| NL163064C (en) | 1980-07-15 |
| FR2163682A1 (en) | 1973-07-27 |
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