JPS5144869B2 - - Google Patents
Info
- Publication number
- JPS5144869B2 JPS5144869B2 JP10308371A JP10308371A JPS5144869B2 JP S5144869 B2 JPS5144869 B2 JP S5144869B2 JP 10308371 A JP10308371 A JP 10308371A JP 10308371 A JP10308371 A JP 10308371A JP S5144869 B2 JPS5144869 B2 JP S5144869B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10308371A JPS5144869B2 (en) | 1971-12-17 | 1971-12-17 | |
JP10308271A JPS4866943A (en) | 1971-12-17 | 1971-12-17 | |
GB5776672A GB1391640A (en) | 1971-12-17 | 1972-12-14 | Semi conductor memory device |
CA158,958A CA1000404A (en) | 1971-12-17 | 1972-12-15 | Semiconductor memory device |
FR7244780A FR2163682B1 (en) | 1971-12-17 | 1972-12-15 | |
DE2261522A DE2261522C3 (en) | 1971-12-17 | 1972-12-15 | Semiconductor storage element switchable by an electric field |
NL7217144.A NL163064C (en) | 1971-12-17 | 1972-12-15 | SEMI-CONDUCTOR MEMORY DEVICE CONTAINING A COMPOSITE INSULATING COATING CONTAINING A FIRST INSULATING SILICON DIOXIDE COATING AND A SECOND INSULATING COAT WITH APPLICATION LEVEL ON THE FIRST INSULATING COATING. |
US466319A US3922710A (en) | 1971-12-17 | 1974-05-02 | Semiconductor memory device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10308371A JPS5144869B2 (en) | 1971-12-17 | 1971-12-17 | |
JP10308271A JPS4866943A (en) | 1971-12-17 | 1971-12-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4866944A JPS4866944A (en) | 1973-09-13 |
JPS5144869B2 true JPS5144869B2 (en) | 1976-12-01 |
Family
ID=26443741
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10308371A Expired JPS5144869B2 (en) | 1971-12-17 | 1971-12-17 | |
JP10308271A Pending JPS4866943A (en) | 1971-12-17 | 1971-12-17 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10308271A Pending JPS4866943A (en) | 1971-12-17 | 1971-12-17 |
Country Status (6)
Country | Link |
---|---|
JP (2) | JPS5144869B2 (en) |
CA (1) | CA1000404A (en) |
DE (1) | DE2261522C3 (en) |
FR (1) | FR2163682B1 (en) |
GB (1) | GB1391640A (en) |
NL (1) | NL163064C (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53150469U (en) * | 1977-05-02 | 1978-11-27 | ||
JPS5484575U (en) * | 1977-11-29 | 1979-06-15 | ||
JPS555478U (en) * | 1978-06-26 | 1980-01-14 | ||
JPS617816U (en) * | 1984-06-19 | 1986-01-17 | 松下電器産業株式会社 | push button device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06326323A (en) * | 1993-05-14 | 1994-11-25 | Nec Corp | Nonvolatile tunnel transistor and memory circuit |
US6303940B1 (en) | 1999-01-26 | 2001-10-16 | Agere Systems Guardian Corp. | Charge injection transistor using high-k dielectric barrier layer |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2791761A (en) * | 1955-02-18 | 1957-05-07 | Bell Telephone Labor Inc | Electrical switching and storage |
CA813537A (en) * | 1967-10-17 | 1969-05-20 | Joseph H. Scott, Jr. | Semiconductor memory device |
-
1971
- 1971-12-17 JP JP10308371A patent/JPS5144869B2/ja not_active Expired
- 1971-12-17 JP JP10308271A patent/JPS4866943A/ja active Pending
-
1972
- 1972-12-14 GB GB5776672A patent/GB1391640A/en not_active Expired
- 1972-12-15 DE DE2261522A patent/DE2261522C3/en not_active Expired
- 1972-12-15 NL NL7217144.A patent/NL163064C/en not_active IP Right Cessation
- 1972-12-15 CA CA158,958A patent/CA1000404A/en not_active Expired
- 1972-12-15 FR FR7244780A patent/FR2163682B1/fr not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53150469U (en) * | 1977-05-02 | 1978-11-27 | ||
JPS5484575U (en) * | 1977-11-29 | 1979-06-15 | ||
JPS555478U (en) * | 1978-06-26 | 1980-01-14 | ||
JPS617816U (en) * | 1984-06-19 | 1986-01-17 | 松下電器産業株式会社 | push button device |
Also Published As
Publication number | Publication date |
---|---|
DE2261522A1 (en) | 1973-07-12 |
CA1000404A (en) | 1976-11-23 |
NL163064C (en) | 1980-07-15 |
NL163064B (en) | 1980-02-15 |
JPS4866943A (en) | 1973-09-13 |
JPS4866944A (en) | 1973-09-13 |
FR2163682A1 (en) | 1973-07-27 |
GB1391640A (en) | 1975-04-23 |
DE2261522B2 (en) | 1977-07-07 |
DE2261522C3 (en) | 1982-03-04 |
NL7217144A (en) | 1973-06-19 |
FR2163682B1 (en) | 1976-10-29 |