GB1394086A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1394086A GB1394086A GB3042772A GB3042772A GB1394086A GB 1394086 A GB1394086 A GB 1394086A GB 3042772 A GB3042772 A GB 3042772A GB 3042772 A GB3042772 A GB 3042772A GB 1394086 A GB1394086 A GB 1394086A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- strip
- base
- zone
- aluminium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 6
- 229910052782 aluminium Inorganic materials 0.000 abstract 6
- 239000004411 aluminium Substances 0.000 abstract 6
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7109139A NL7109139A (de) | 1971-07-02 | 1971-07-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1394086A true GB1394086A (en) | 1975-05-14 |
Family
ID=19813531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3042772A Expired GB1394086A (en) | 1971-07-02 | 1972-06-29 | Semiconductor devices |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS5231154B1 (de) |
| AU (1) | AU4397372A (de) |
| BE (1) | BE785747A (de) |
| CA (1) | CA963174A (de) |
| CH (1) | CH546483A (de) |
| DE (1) | DE2231521C2 (de) |
| ES (1) | ES404386A1 (de) |
| FR (1) | FR2144741B1 (de) |
| GB (1) | GB1394086A (de) |
| IT (1) | IT959277B (de) |
| NL (1) | NL7109139A (de) |
| SE (1) | SE377864B (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2223624A (en) * | 1988-08-19 | 1990-04-11 | Murata Manufacturing Co | Method of manufacturing a chip coil |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2011178B (en) * | 1977-12-15 | 1982-03-17 | Philips Electronic Associated | Fieldeffect devices |
| JPS55140673A (en) * | 1979-04-14 | 1980-11-04 | Yamaha Motor Co Ltd | Rear arm mount construction |
| DE2944937A1 (de) * | 1979-11-07 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement |
| US4947232A (en) * | 1980-03-22 | 1990-08-07 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
| JPS56169368A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
| JPS56169369A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
| DE3520599A1 (de) * | 1984-06-15 | 1985-12-19 | Rca Corp., Princeton, N.J. | Halbleiterbauelement |
| JPS61114574A (ja) * | 1984-11-09 | 1986-06-02 | Hitachi Ltd | 半導体装置 |
| US5382826A (en) * | 1993-12-21 | 1995-01-17 | Xerox Corporation | Stacked high voltage transistor unit |
| DE102016120301A1 (de) * | 2016-10-25 | 2018-04-26 | Infineon Technologies Ag | Leistungshalbleitervorrichtungs-Abschlussstruktur |
| DE102016120300A1 (de) * | 2016-10-25 | 2018-04-26 | Infineon Technologies Austria Ag | Hochspannungsabschlussstruktur einer Leistungshalbleitervorrichtung |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1260618A (en) * | 1969-08-09 | 1972-01-19 | Soc Gen Semiconduttori Spa | Planar junctions with integrated resistor, for high voltages |
-
0
- BE BE785747D patent/BE785747A/xx unknown
-
1971
- 1971-07-02 NL NL7109139A patent/NL7109139A/xx unknown
-
1972
- 1972-06-28 DE DE19722231521 patent/DE2231521C2/de not_active Expired
- 1972-06-28 CA CA145,874A patent/CA963174A/en not_active Expired
- 1972-06-28 IT IT6909272A patent/IT959277B/it active
- 1972-06-28 AU AU43973/72A patent/AU4397372A/en not_active Expired
- 1972-06-29 GB GB3042772A patent/GB1394086A/en not_active Expired
- 1972-06-29 JP JP6453172A patent/JPS5231154B1/ja active Pending
- 1972-06-29 SE SE857272A patent/SE377864B/xx unknown
- 1972-06-29 CH CH546483D patent/CH546483A/de not_active IP Right Cessation
- 1972-06-30 ES ES404386A patent/ES404386A1/es not_active Expired
- 1972-07-03 FR FR7224006A patent/FR2144741B1/fr not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2223624A (en) * | 1988-08-19 | 1990-04-11 | Murata Manufacturing Co | Method of manufacturing a chip coil |
| US5071509A (en) * | 1988-08-19 | 1991-12-10 | Murata Mfg. Co., Ltd | Chip coil manufacturing method |
| GB2223624B (en) * | 1988-08-19 | 1993-03-24 | Murata Manufacturing Co | Chip coil and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| AU4397372A (en) | 1974-01-03 |
| DE2231521C2 (de) | 1982-05-13 |
| SE377864B (de) | 1975-07-28 |
| IT959277B (it) | 1973-11-10 |
| NL7109139A (de) | 1973-01-04 |
| CH546483A (de) | 1974-02-28 |
| FR2144741B1 (de) | 1977-08-26 |
| JPS5231154B1 (de) | 1977-08-12 |
| BE785747A (fr) | 1973-01-02 |
| CA963174A (en) | 1975-02-18 |
| ES404386A1 (es) | 1975-06-01 |
| FR2144741A1 (de) | 1973-02-16 |
| DE2231521A1 (de) | 1973-01-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |