GB1262787A - Improvements in or relating to semiconductor arrangements - Google Patents
Improvements in or relating to semiconductor arrangementsInfo
- Publication number
- GB1262787A GB1262787A GB22462/69A GB2246269A GB1262787A GB 1262787 A GB1262787 A GB 1262787A GB 22462/69 A GB22462/69 A GB 22462/69A GB 2246269 A GB2246269 A GB 2246269A GB 1262787 A GB1262787 A GB 1262787A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- semi
- conductor
- silicon
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
1,262,787. Semi-conductor devices. SIEMENS A.G. 2 May, 1969 [6 May, 1968], No. 22462/69. Heading H1K. One or more semi-conductor devices are mounted on a substrate which has isolated conductive connections extending between its upper and lower surfaces, at least two electrodes of the or each device being connected to these connections at the mounting surface so that contact may be made at the free face of the substrate. One form of substrate is produced by cutting a slice from a clamped bundle of surfaceoxidized tantalum wires. In another form the mounting surface of the substrate is the edge face of a sequence of alternate semi-conductive (conductive) and insulative materials. In a further form a semi-conductor substrate of one conductivity type is provided with highly conductive diffused channels of the opposite conductivity type. With the first and second forms a preformed semi-conductor body may be secured to the substrate by depositing over the two held in contact a film of silicon oxide or silicon nitride. Instead a semi-conductor body may be formed by epitaxial growth on the substrate-if the tantalum wires are correctly orientated and closely spaced a monocrystalline silicon layer may be grown on the substrate slice; if the semi-conductor-insulator alternate sequence consists of silicon and intrinsic silicon carbide epitaxially grown on one another, monocrystalline silicon may be grown on this (successive silicon layers may be alternately of P- and N-type). In the remaining form the substrate may consist of an anisotropic material such as graphite or certain (unspecified) organic materials. The embodiments described are (a) a mesa transistor with its emitter and base electrodes connected by metal tracks to appropriate areas of the mounting surface of the siliconsilicon carbide substrate, and (b) two transistors and a diode interconnected and mounted on a diffused-connection semi-conductor substrate.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19681764262 DE1764262A1 (en) | 1968-05-06 | 1968-05-06 | Semiconductor arrangement that is firmly attached to a base |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1262787A true GB1262787A (en) | 1972-02-09 |
Family
ID=5697918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB22462/69A Expired GB1262787A (en) | 1968-05-06 | 1969-05-02 | Improvements in or relating to semiconductor arrangements |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE1764262A1 (en) |
FR (1) | FR1597105A (en) |
GB (1) | GB1262787A (en) |
NL (1) | NL6903404A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2132411A (en) * | 1982-11-12 | 1984-07-04 | Hitachi Ltd | Improvements in substrate structures |
US5262718A (en) * | 1985-08-05 | 1993-11-16 | Raychem Limited | Anisotropically electrically conductive article |
US5631447A (en) * | 1988-02-05 | 1997-05-20 | Raychem Limited | Uses of uniaxially electrically conductive articles |
US5637925A (en) * | 1988-02-05 | 1997-06-10 | Raychem Ltd | Uses of uniaxially electrically conductive articles |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2445626A1 (en) * | 1978-12-29 | 1980-07-25 | Radiotechnique Compelec | Power transistor for monolithic integrated circuit - has low collector resistance achieved by using two extra domains of opposite conduction type |
DE2902002A1 (en) * | 1979-01-19 | 1980-07-31 | Gerhard Krause | Three=dimensional integrated circuits - mfd. by joining wafer stack with contacts through conductive adhesive |
-
1968
- 1968-05-06 DE DE19681764262 patent/DE1764262A1/en active Pending
- 1968-12-24 FR FR1597105D patent/FR1597105A/fr not_active Expired
-
1969
- 1969-03-05 NL NL6903404A patent/NL6903404A/xx unknown
- 1969-05-02 GB GB22462/69A patent/GB1262787A/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2132411A (en) * | 1982-11-12 | 1984-07-04 | Hitachi Ltd | Improvements in substrate structures |
US5262718A (en) * | 1985-08-05 | 1993-11-16 | Raychem Limited | Anisotropically electrically conductive article |
US5631447A (en) * | 1988-02-05 | 1997-05-20 | Raychem Limited | Uses of uniaxially electrically conductive articles |
US5637925A (en) * | 1988-02-05 | 1997-06-10 | Raychem Ltd | Uses of uniaxially electrically conductive articles |
US5678287A (en) * | 1988-02-05 | 1997-10-21 | Raychem Limited | Uses of uniaxially electrically conductive articles |
Also Published As
Publication number | Publication date |
---|---|
DE1764262A1 (en) | 1971-07-01 |
FR1597105A (en) | 1970-06-22 |
NL6903404A (en) | 1969-11-10 |
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