NL7109139A - - Google Patents

Info

Publication number
NL7109139A
NL7109139A NL7109139A NL7109139A NL7109139A NL 7109139 A NL7109139 A NL 7109139A NL 7109139 A NL7109139 A NL 7109139A NL 7109139 A NL7109139 A NL 7109139A NL 7109139 A NL7109139 A NL 7109139A
Authority
NL
Netherlands
Application number
NL7109139A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE785747D priority Critical patent/BE785747A/xx
Application filed filed Critical
Priority to NL7109139A priority patent/NL7109139A/xx
Priority to CA145,874A priority patent/CA963174A/en
Priority to IT6909272A priority patent/IT959277B/it
Priority to AU43973/72A priority patent/AU4397372A/en
Priority to DE19722231521 priority patent/DE2231521C2/de
Priority to GB3042772A priority patent/GB1394086A/en
Priority to JP6453172A priority patent/JPS5231154B1/ja
Priority to CH546483D priority patent/CH546483A/de
Priority to SE857272A priority patent/SE377864B/xx
Priority to ES404386A priority patent/ES404386A1/es
Priority to FR7224006A priority patent/FR2144741B1/fr
Publication of NL7109139A publication Critical patent/NL7109139A/xx
Priority to US05/555,841 priority patent/US4157563A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • H01L29/405Resistive arrangements, e.g. resistive or semi-insulating field plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7322Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/8611Planar PN junction diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
NL7109139A 1971-07-02 1971-07-02 NL7109139A (de)

Priority Applications (13)

Application Number Priority Date Filing Date Title
BE785747D BE785747A (fr) 1971-07-02 Dispositif semiconducteur
NL7109139A NL7109139A (de) 1971-07-02 1971-07-02
DE19722231521 DE2231521C2 (de) 1971-07-02 1972-06-28 Planares Halbleiterbauelement
IT6909272A IT959277B (it) 1971-07-02 1972-06-28 Dispositivo semiconduttore
AU43973/72A AU4397372A (en) 1971-07-02 1972-06-28 Semiconductor device
CA145,874A CA963174A (en) 1971-07-02 1972-06-28 Semiconductor device
GB3042772A GB1394086A (en) 1971-07-02 1972-06-29 Semiconductor devices
JP6453172A JPS5231154B1 (de) 1971-07-02 1972-06-29
CH546483D CH546483A (de) 1971-07-02 1972-06-29 Halbleiteranordnung.
SE857272A SE377864B (de) 1971-07-02 1972-06-29
ES404386A ES404386A1 (es) 1971-07-02 1972-06-30 Un dispositivo semiconductor.
FR7224006A FR2144741B1 (de) 1971-07-02 1972-07-03
US05/555,841 US4157563A (en) 1971-07-02 1975-03-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7109139A NL7109139A (de) 1971-07-02 1971-07-02

Publications (1)

Publication Number Publication Date
NL7109139A true NL7109139A (de) 1973-01-04

Family

ID=19813531

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7109139A NL7109139A (de) 1971-07-02 1971-07-02

Country Status (12)

Country Link
JP (1) JPS5231154B1 (de)
AU (1) AU4397372A (de)
BE (1) BE785747A (de)
CA (1) CA963174A (de)
CH (1) CH546483A (de)
DE (1) DE2231521C2 (de)
ES (1) ES404386A1 (de)
FR (1) FR2144741B1 (de)
GB (1) GB1394086A (de)
IT (1) IT959277B (de)
NL (1) NL7109139A (de)
SE (1) SE377864B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2011178B (en) * 1977-12-15 1982-03-17 Philips Electronic Associated Fieldeffect devices
JPS55140673A (en) * 1979-04-14 1980-11-04 Yamaha Motor Co Ltd Rear arm mount construction
DE2944937A1 (de) * 1979-11-07 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
DE3520599A1 (de) * 1984-06-15 1985-12-19 Rca Corp., Princeton, N.J. Halbleiterbauelement
JPS61114574A (ja) * 1984-11-09 1986-06-02 Hitachi Ltd 半導体装置
JP2615151B2 (ja) * 1988-08-19 1997-05-28 株式会社村田製作所 チップ型コイル及びその製造方法
US5382826A (en) * 1993-12-21 1995-01-17 Xerox Corporation Stacked high voltage transistor unit
DE102016120300A1 (de) 2016-10-25 2018-04-26 Infineon Technologies Austria Ag Hochspannungsabschlussstruktur einer Leistungshalbleitervorrichtung
DE102016120301A1 (de) 2016-10-25 2018-04-26 Infineon Technologies Ag Leistungshalbleitervorrichtungs-Abschlussstruktur

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1260618A (en) * 1969-08-09 1972-01-19 Soc Gen Semiconduttori Spa Planar junctions with integrated resistor, for high voltages

Also Published As

Publication number Publication date
GB1394086A (en) 1975-05-14
JPS5231154B1 (de) 1977-08-12
DE2231521C2 (de) 1982-05-13
FR2144741A1 (de) 1973-02-16
CH546483A (de) 1974-02-28
CA963174A (en) 1975-02-18
DE2231521A1 (de) 1973-01-18
FR2144741B1 (de) 1977-08-26
IT959277B (it) 1973-11-10
SE377864B (de) 1975-07-28
BE785747A (fr) 1973-01-02
ES404386A1 (es) 1975-06-01
AU4397372A (en) 1974-01-03

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