JPS4854871A - - Google Patents

Info

Publication number
JPS4854871A
JPS4854871A JP10857972A JP10857972A JPS4854871A JP S4854871 A JPS4854871 A JP S4854871A JP 10857972 A JP10857972 A JP 10857972A JP 10857972 A JP10857972 A JP 10857972A JP S4854871 A JPS4854871 A JP S4854871A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10857972A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4854871A publication Critical patent/JPS4854871A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • H01L29/405Resistive arrangements, e.g. resistive or semi-insulating field plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/8611Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP10857972A 1971-11-01 1972-10-31 Pending JPS4854871A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19438071A 1971-11-01 1971-11-01

Publications (1)

Publication Number Publication Date
JPS4854871A true JPS4854871A (de) 1973-08-01

Family

ID=22717378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10857972A Pending JPS4854871A (de) 1971-11-01 1972-10-31

Country Status (2)

Country Link
JP (1) JPS4854871A (de)
DE (1) DE2253388B2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1063700B1 (de) * 1999-06-22 2012-07-25 Infineon Technologies AG Substrat für Hochspannungsmodule

Also Published As

Publication number Publication date
DE2253388A1 (de) 1973-05-17
DE2253388B2 (de) 1975-07-24

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