CH542514A - Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung - Google Patents
Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte HalbleiteranordnungInfo
- Publication number
- CH542514A CH542514A CH369672A CH369672A CH542514A CH 542514 A CH542514 A CH 542514A CH 369672 A CH369672 A CH 369672A CH 369672 A CH369672 A CH 369672A CH 542514 A CH542514 A CH 542514A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor device
- manufacturing
- device manufactured
- manufactured
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/911—Differential oxidation and etching
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7103548,A NL173110C (nl) | 1971-03-17 | 1971-03-17 | Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht. |
Publications (1)
Publication Number | Publication Date |
---|---|
CH542514A true CH542514A (de) | 1973-09-30 |
Family
ID=19812705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH369672A CH542514A (de) | 1971-03-17 | 1972-03-14 | Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung |
Country Status (15)
Country | Link |
---|---|
US (1) | US3783047A (de) |
JP (4) | JPS5135350B1 (de) |
AT (1) | AT374622B (de) |
AU (1) | AU470165B2 (de) |
BE (1) | BE780907A (de) |
BR (1) | BR7201440D0 (de) |
CA (1) | CA954236A (de) |
CH (1) | CH542514A (de) |
DE (1) | DE2212049C2 (de) |
ES (1) | ES400794A1 (de) |
FR (1) | FR2130397B1 (de) |
GB (1) | GB1382082A (de) |
IT (1) | IT952978B (de) |
NL (1) | NL173110C (de) |
SE (1) | SE383803B (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2628407A1 (de) * | 1975-06-30 | 1977-01-20 | Ibm | Verfahren zum herstellen von vergrabenen dielektrischen isolierungen |
DE2626738A1 (de) * | 1975-06-30 | 1977-01-20 | Ibm | Verfahren zur bildung versenkter dielektrischer isolationszonen bei monolithisch integrierten halbleiterschaltungen |
DE2729973A1 (de) * | 1976-07-15 | 1978-01-19 | Philips Nv | Verfahren zur herstellung einer halbleiteranordnung |
DE3306702A1 (de) * | 1982-02-25 | 1983-09-01 | Raytheon Co., 02173 Lexington, Mass. | Verfahren zur bildung eines halbleiteraufbaus an halbleiter-bauteilen |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3961355A (en) * | 1972-06-30 | 1976-06-01 | International Business Machines Corporation | Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming |
NL161301C (nl) * | 1972-12-29 | 1980-01-15 | Philips Nv | Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan. |
NL176029C (nl) * | 1973-02-01 | 1985-02-01 | Philips Nv | Geintegreerde logische schakeling met komplementaire transistoren. |
US3885994A (en) * | 1973-05-25 | 1975-05-27 | Trw Inc | Bipolar transistor construction method |
US3888706A (en) * | 1973-08-06 | 1975-06-10 | Rca Corp | Method of making a compact guard-banded mos integrated circuit device using framelike diffusion-masking structure |
US3951693A (en) * | 1974-01-17 | 1976-04-20 | Motorola, Inc. | Ion-implanted self-aligned transistor device including the fabrication method therefor |
US4038110A (en) * | 1974-06-17 | 1977-07-26 | Ibm Corporation | Planarization of integrated circuit surfaces through selective photoresist masking |
DE2438256A1 (de) * | 1974-08-08 | 1976-02-19 | Siemens Ag | Verfahren zum herstellen einer monolithischen halbleiterverbundanordnung |
US3962717A (en) * | 1974-10-29 | 1976-06-08 | Fairchild Camera And Instrument Corporation | Oxide isolated integrated injection logic with selective guard ring |
US4044454A (en) * | 1975-04-16 | 1977-08-30 | Ibm Corporation | Method for forming integrated circuit regions defined by recessed dielectric isolation |
US4002511A (en) * | 1975-04-16 | 1977-01-11 | Ibm Corporation | Method for forming masks comprising silicon nitride and novel mask structures produced thereby |
US3948694A (en) * | 1975-04-30 | 1976-04-06 | Motorola, Inc. | Self-aligned method for integrated circuit manufacture |
NL7506594A (nl) * | 1975-06-04 | 1976-12-07 | Philips Nv | Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze. |
US3976511A (en) * | 1975-06-30 | 1976-08-24 | Ibm Corporation | Method for fabricating integrated circuit structures with full dielectric isolation by ion bombardment |
US4045250A (en) * | 1975-08-04 | 1977-08-30 | Rca Corporation | Method of making a semiconductor device |
US4135954A (en) * | 1977-07-12 | 1979-01-23 | International Business Machines Corporation | Method for fabricating self-aligned semiconductor devices utilizing selectively etchable masking layers |
US4131497A (en) * | 1977-07-12 | 1978-12-26 | International Business Machines Corporation | Method of manufacturing self-aligned semiconductor devices |
US4135289A (en) * | 1977-08-23 | 1979-01-23 | Bell Telephone Laboratories, Incorporated | Method for producing a buried junction memory device |
DE2911726C2 (de) * | 1978-03-27 | 1985-08-01 | Ncr Corp., Dayton, Ohio | Verfahren zur Herstellung eines Feldeffekttransistors |
DE2824026A1 (de) * | 1978-06-01 | 1979-12-20 | Licentia Gmbh | Verfahren zum herstellen eines sperrschicht-feldeffekttransistors |
US4182636A (en) * | 1978-06-30 | 1980-01-08 | International Business Machines Corporation | Method of fabricating self-aligned contact vias |
JPS5538084A (en) * | 1978-09-11 | 1980-03-17 | Nec Corp | Semiconductor integrated circuit device |
JPS55128868A (en) * | 1979-03-28 | 1980-10-06 | Fujitsu Ltd | Method of fabricating semiconductor device |
NL7903158A (nl) * | 1979-04-23 | 1980-10-27 | Philips Nv | Werkwijze voor het vervaardigen van een veldeffekt- transistor met geisoleerde poortelektrode, en transistor vervaardigd door toepassing van een derge- lijke werkwijze. |
JPS55154763A (en) * | 1979-05-23 | 1980-12-02 | Hitachi Ltd | Manufacture of semiconductor device |
US4289550A (en) * | 1979-05-25 | 1981-09-15 | Raytheon Company | Method of forming closely spaced device regions utilizing selective etching and diffusion |
US4677456A (en) * | 1979-05-25 | 1987-06-30 | Raytheon Company | Semiconductor structure and manufacturing method |
US4376664A (en) * | 1979-05-31 | 1983-03-15 | Fujitsu Limited | Method of producing a semiconductor device |
JPS588139B2 (ja) * | 1979-05-31 | 1983-02-14 | 富士通株式会社 | 半導体装置の製造方法 |
JPS5856546Y2 (ja) * | 1979-09-26 | 1983-12-27 | 日本軽金属株式会社 | パネル連結取付装置 |
US4313782A (en) * | 1979-11-14 | 1982-02-02 | Rca Corporation | Method of manufacturing submicron channel transistors |
US4656498A (en) * | 1980-10-27 | 1987-04-07 | Texas Instruments Incorporated | Oxide-isolated integrated Schottky logic |
US4511911A (en) * | 1981-07-22 | 1985-04-16 | International Business Machines Corporation | Dense dynamic memory cell structure and process |
US4443932A (en) * | 1982-01-18 | 1984-04-24 | Motorla, Inc. | Self-aligned oxide isolated process and device |
US4569698A (en) * | 1982-02-25 | 1986-02-11 | Raytheon Company | Method of forming isolated device regions by selective successive etching of composite masking layers and semiconductor material prior to ion implantation |
US4591890A (en) * | 1982-12-20 | 1986-05-27 | Motorola Inc. | Radiation hard MOS devices and methods for the manufacture thereof |
US4572765A (en) * | 1983-05-02 | 1986-02-25 | Fairchild Camera & Instrument Corporation | Method of fabricating integrated circuit structures using replica patterning |
JPS6281727A (ja) * | 1985-10-05 | 1987-04-15 | Fujitsu Ltd | 埋込型素子分離溝の形成方法 |
US4729816A (en) * | 1987-01-02 | 1988-03-08 | Motorola, Inc. | Isolation formation process with active area protection |
NL8700541A (nl) * | 1987-03-06 | 1988-10-03 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een plak silicium plaatselijk wordt voorzien van veldoxidegebieden. |
JP2609619B2 (ja) * | 1987-08-25 | 1997-05-14 | 三菱電機株式会社 | 半導体装置 |
KR0167231B1 (ko) * | 1994-11-11 | 1999-02-01 | 문정환 | 반도체장치의 격리방법 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3386865A (en) * | 1965-05-10 | 1968-06-04 | Ibm | Process of making planar semiconductor devices isolated by encapsulating oxide filled channels |
US3451867A (en) * | 1966-05-31 | 1969-06-24 | Gen Electric | Processes of epitaxial deposition or diffusion employing a silicon carbide masking layer |
JPS517551A (en) * | 1974-07-06 | 1976-01-21 | Akira Ito | Purasuchitsukugaisoseidenkionsuikino kozo |
-
1971
- 1971-03-17 NL NLAANVRAGE7103548,A patent/NL173110C/xx not_active IP Right Cessation
-
1972
- 1972-03-01 US US00230614A patent/US3783047A/en not_active Expired - Lifetime
- 1972-03-13 DE DE2212049A patent/DE2212049C2/de not_active Expired
- 1972-03-13 AU AU39914/72A patent/AU470165B2/en not_active Expired
- 1972-03-14 CH CH369672A patent/CH542514A/de not_active IP Right Cessation
- 1972-03-14 CA CA137,106A patent/CA954236A/en not_active Expired
- 1972-03-14 BR BR1440/72A patent/BR7201440D0/pt unknown
- 1972-03-14 IT IT67807/72A patent/IT952978B/it active
- 1972-03-14 GB GB1177172A patent/GB1382082A/en not_active Expired
- 1972-03-14 SE SE7203257A patent/SE383803B/xx unknown
- 1972-03-15 AT AT0217472A patent/AT374622B/de not_active IP Right Cessation
- 1972-03-15 ES ES400794A patent/ES400794A1/es not_active Expired
- 1972-03-16 JP JP47026231A patent/JPS5135350B1/ja active Pending
- 1972-03-17 BE BE780907A patent/BE780907A/xx not_active IP Right Cessation
- 1972-03-17 FR FR7209441A patent/FR2130397B1/fr not_active Expired
-
1976
- 1976-02-09 JP JP51012407A patent/JPS5229152B2/ja not_active Expired
- 1976-02-09 JP JP51012409A patent/JPS51139269A/ja active Granted
- 1976-02-09 JP JP51012408A patent/JPS5229153B2/ja not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2628407A1 (de) * | 1975-06-30 | 1977-01-20 | Ibm | Verfahren zum herstellen von vergrabenen dielektrischen isolierungen |
DE2626738A1 (de) * | 1975-06-30 | 1977-01-20 | Ibm | Verfahren zur bildung versenkter dielektrischer isolationszonen bei monolithisch integrierten halbleiterschaltungen |
DE2729973A1 (de) * | 1976-07-15 | 1978-01-19 | Philips Nv | Verfahren zur herstellung einer halbleiteranordnung |
DE3306702A1 (de) * | 1982-02-25 | 1983-09-01 | Raytheon Co., 02173 Lexington, Mass. | Verfahren zur bildung eines halbleiteraufbaus an halbleiter-bauteilen |
Also Published As
Publication number | Publication date |
---|---|
ES400794A1 (es) | 1975-01-16 |
IT952978B (it) | 1973-07-30 |
JPS5135350B1 (de) | 1976-10-01 |
JPS5229152B2 (de) | 1977-07-30 |
CA954236A (en) | 1974-09-03 |
ATA217472A (de) | 1979-01-15 |
FR2130397A1 (de) | 1972-11-03 |
US3783047A (en) | 1974-01-01 |
NL7103548A (de) | 1972-09-19 |
DE2212049C2 (de) | 1981-10-29 |
JPS539061B2 (de) | 1978-04-03 |
JPS51102472A (de) | 1976-09-09 |
NL173110B (nl) | 1983-07-01 |
AU3991472A (en) | 1973-09-20 |
FR2130397B1 (de) | 1977-09-02 |
SE383803B (sv) | 1976-03-29 |
BE780907A (fr) | 1972-09-18 |
JPS51102471A (de) | 1976-09-09 |
NL173110C (nl) | 1983-12-01 |
AT374622B (de) | 1984-05-10 |
GB1382082A (en) | 1975-01-29 |
JPS51139269A (en) | 1976-12-01 |
DE2212049A1 (de) | 1972-09-21 |
AU470165B2 (en) | 1973-09-20 |
JPS5229153B2 (de) | 1977-07-30 |
BR7201440D0 (pt) | 1973-06-07 |
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