CH555087A - Verfahren zur herstellung einer halbleiteranordnung mit einem leitermuster und durch dieses verfahren hergestellte halbleiteranordnung. - Google Patents
Verfahren zur herstellung einer halbleiteranordnung mit einem leitermuster und durch dieses verfahren hergestellte halbleiteranordnung.Info
- Publication number
- CH555087A CH555087A CH589273A CH589273A CH555087A CH 555087 A CH555087 A CH 555087A CH 589273 A CH589273 A CH 589273A CH 589273 A CH589273 A CH 589273A CH 555087 A CH555087 A CH 555087A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor arrangement
- manufacturing
- conductor pattern
- produced
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 239000004020 conductor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
- H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
- C09K2323/04—Charge transferring layer characterised by chemical composition, i.e. conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0326—Inorganic, non-metallic conductor, e.g. indium-tin oxide [ITO]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/944—Shadow
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/951—Lift-off
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Weting (AREA)
- Surface Treatment Of Glass (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7205767.A NL163370C (nl) | 1972-04-28 | 1972-04-28 | Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon. |
Publications (1)
Publication Number | Publication Date |
---|---|
CH555087A true CH555087A (de) | 1974-10-15 |
Family
ID=19815941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH589273A CH555087A (de) | 1972-04-28 | 1973-04-25 | Verfahren zur herstellung einer halbleiteranordnung mit einem leitermuster und durch dieses verfahren hergestellte halbleiteranordnung. |
Country Status (13)
Country | Link |
---|---|
US (2) | US3822467A (de) |
JP (2) | JPS5636576B2 (de) |
AU (1) | AU473179B2 (de) |
BE (1) | BE798883A (de) |
BR (1) | BR7303088D0 (de) |
CA (2) | CA984932A (de) |
CH (1) | CH555087A (de) |
DE (2) | DE2319883C3 (de) |
ES (1) | ES414113A1 (de) |
FR (2) | FR2182208B1 (de) |
GB (2) | GB1435320A (de) |
NL (1) | NL163370C (de) |
SE (1) | SE382283B (de) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3900944A (en) * | 1973-12-19 | 1975-08-26 | Texas Instruments Inc | Method of contacting and connecting semiconductor devices in integrated circuits |
FR2285716A1 (fr) * | 1974-09-18 | 1976-04-16 | Radiotechnique Compelec | Procede pour la fabrication d'un dispositif semi-conducteur comportant une configuration de conducteurs et dispositif fabrique par ce procede |
NL7412383A (nl) * | 1974-09-19 | 1976-03-23 | Philips Nv | Werkwijze voor het vervaardigen van een in- richting met een geleiderpatroon. |
CA1027257A (en) * | 1974-10-29 | 1978-02-28 | James A. Benjamin | Overlay metallization field effect transistor |
US3981757A (en) * | 1975-04-14 | 1976-09-21 | Globe-Union Inc. | Method of fabricating keyboard apparatus |
US4188095A (en) * | 1975-07-29 | 1980-02-12 | Citizen Watch Co., Ltd. | Liquid type display cells and method of manufacturing the same |
US4015987A (en) * | 1975-08-13 | 1977-04-05 | The United States Of America As Represented By The Secretary Of The Navy | Process for making chip carriers using anodized aluminum |
JPS5237744A (en) * | 1975-09-19 | 1977-03-23 | Seiko Epson Corp | Electronic desk computer with liquid crystal display |
US4122524A (en) * | 1976-11-03 | 1978-10-24 | Gilbert & Barker Manufacturing Company | Sale computing and display package for gasoline-dispensing apparatus |
JPS5370688A (en) * | 1976-12-06 | 1978-06-23 | Toshiba Corp | Production of semoconductor device |
DE2807350C2 (de) * | 1977-03-02 | 1983-01-13 | Sharp K.K., Osaka | Flüssigkristall-Anzeigevorrichtung in Baueinheit mit einem integrierten Schaltkreis |
US4181563A (en) * | 1977-03-31 | 1980-01-01 | Citizen Watch Company Limited | Process for forming electrode pattern on electro-optical display device |
US4215156A (en) * | 1977-08-26 | 1980-07-29 | International Business Machines Corporation | Method for fabricating tantalum semiconductor contacts |
US4182781A (en) * | 1977-09-21 | 1980-01-08 | Texas Instruments Incorporated | Low cost method for forming elevated metal bumps on integrated circuit bodies employing an aluminum/palladium metallization base for electroless plating |
FR2407746A1 (fr) * | 1977-11-07 | 1979-06-01 | Commissariat Energie Atomique | Electrode pour cellule d'electrolyse, notamment pour cellule d'affichage electrolytique et son procede de fabrication |
JPS5496775A (en) * | 1978-01-17 | 1979-07-31 | Hitachi Ltd | Method of forming circuit |
JPS54150418A (en) * | 1978-05-19 | 1979-11-26 | Hitachi Ltd | Production of liquid crystal display element |
JPS6019608B2 (ja) * | 1978-10-03 | 1985-05-17 | シャープ株式会社 | 電極パタ−ン形成方法 |
US4262399A (en) * | 1978-11-08 | 1981-04-21 | General Electric Co. | Ultrasonic transducer fabricated as an integral park of a monolithic integrated circuit |
US4228574A (en) * | 1979-05-29 | 1980-10-21 | Texas Instruments Incorporated | Automated liquid crystal display process |
JPS55163860A (en) * | 1979-06-06 | 1980-12-20 | Toshiba Corp | Manufacture of semiconductor device |
JPS5638327U (de) * | 1979-08-30 | 1981-04-11 | ||
JPS5669835A (en) * | 1979-11-09 | 1981-06-11 | Japan Electronic Ind Dev Assoc<Jeida> | Method for forming thin film pattern |
WO1981003240A1 (en) * | 1980-05-08 | 1981-11-12 | Rockwell International Corp | Lift-off process |
DE3028044C1 (de) * | 1980-07-24 | 1981-10-08 | Vdo Adolf Schindling Ag, 6000 Frankfurt | Lötfähiges Schichtensystem |
US4468659A (en) * | 1980-08-25 | 1984-08-28 | Sharp Kabushiki Kaisha | Electroluminescent display panel assembly |
US4502917A (en) * | 1980-09-15 | 1985-03-05 | Cherry Electrical Products Corporation | Process for forming patterned films |
US4344817A (en) * | 1980-09-15 | 1982-08-17 | Photon Power, Inc. | Process for forming tin oxide conductive pattern |
US4838656A (en) * | 1980-10-06 | 1989-06-13 | Andus Corporation | Transparent electrode fabrication |
JPS5772349A (en) * | 1980-10-23 | 1982-05-06 | Nec Corp | Semiconductor integrated circuit device |
JPS5778173A (en) * | 1980-11-04 | 1982-05-15 | Hitachi Ltd | Semiconductor device and manufacture thereof |
US4336295A (en) * | 1980-12-22 | 1982-06-22 | Eastman Kodak Company | Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device |
JPS57161882A (en) * | 1981-03-31 | 1982-10-05 | Hitachi Ltd | Display body panel |
JPS5834433A (ja) * | 1981-08-25 | 1983-02-28 | Optrex Corp | 高信頼性電気光学素子及びその製法 |
DE3136741A1 (de) * | 1981-09-16 | 1983-03-31 | Vdo Adolf Schindling Ag, 6000 Frankfurt | Fluessigkristallzelle |
DE3151557A1 (de) * | 1981-12-28 | 1983-07-21 | SWF-Spezialfabrik für Autozubehör Gustav Rau GmbH, 7120 Bietigheim-Bissingen | Elektrooptische anzeigevorrichtung und verfahren zu ihrer herstellung |
DE3211408A1 (de) * | 1982-03-27 | 1983-09-29 | Vdo Adolf Schindling Ag, 6000 Frankfurt | Substrat |
JPS5965825A (ja) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | 液晶表示素子 |
JPS59180193A (ja) * | 1983-03-28 | 1984-10-13 | 積水化学工業株式会社 | 管の接合方法 |
JPS59230112A (ja) * | 1983-06-13 | 1984-12-24 | Hitachi Ltd | 車載用電子表示式計器盤 |
DE3345364A1 (de) * | 1983-12-15 | 1985-06-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Anzeigetafel mit mehreren anzeigeeinheiten |
GB8419490D0 (en) * | 1984-07-31 | 1984-09-05 | Gen Electric Co Plc | Solderable contact materials |
GB2166899B (en) * | 1984-11-09 | 1987-12-16 | Hitachi Ltd | Liquid crystal display device |
FR2579809B1 (fr) * | 1985-04-02 | 1987-05-15 | Thomson Csf | Procede de realisation de matrices decommande a diodes pour ecran plat de visualisation electro-optique et ecran plat realise par ce procede |
US4687541A (en) * | 1986-09-22 | 1987-08-18 | Rockwell International Corporation | Dual deposition single level lift-off process |
JPS63160352A (ja) * | 1986-12-24 | 1988-07-04 | Semiconductor Energy Lab Co Ltd | 半導体装置の実装方法 |
DE3710223C2 (de) * | 1987-03-27 | 2002-02-21 | Aeg Ges Moderne Inf Sys Mbh | Leiterbahnenanordnung mit einer überlappenden Verbindung zwischen einer metallischen Leiterbahn und einer ITO-Schicht-Leiterbahn auf einer Isolierplatte aus Glas |
JPH01241597A (ja) * | 1988-03-23 | 1989-09-26 | Mitsubishi Electric Corp | フラットパネルディスプレイ装置の駆動方法及びフラットパネルディスプレイ装置 |
DE4113686A1 (de) * | 1991-04-26 | 1992-10-29 | Licentia Gmbh | Verfahren zum herstellen eines leiterbahnenmusters, insbesondere einer fluessigkristallanzeigevorrichtung |
US5501943A (en) * | 1995-02-21 | 1996-03-26 | Motorola, Inc. | Method of patterning an inorganic overcoat for a liquid crystal display electrode |
US6022803A (en) * | 1997-02-26 | 2000-02-08 | Nec Corporation | Fabrication method for semiconductor apparatus |
US5986391A (en) * | 1998-03-09 | 1999-11-16 | Feldman Technology Corporation | Transparent electrodes |
TW200501258A (en) * | 2003-06-17 | 2005-01-01 | Chung Shan Inst Of Science | Method of polishing semiconductor copper interconnect integrated with extremely low dielectric constant material |
JP4106438B2 (ja) * | 2003-06-20 | 2008-06-25 | 独立行政法人産業技術総合研究所 | 多層微細配線インターポーザおよびその製造方法 |
DE102004050269A1 (de) * | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
US11923135B2 (en) | 2019-08-29 | 2024-03-05 | Kosmek Ltd. | Magnetic clamp device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3076727A (en) * | 1959-12-24 | 1963-02-05 | Libbey Owens Ford Glass Co | Article having electrically conductive coating and process of making |
NL128768C (de) * | 1960-12-09 | |||
US3210214A (en) * | 1962-11-29 | 1965-10-05 | Sylvania Electric Prod | Electrical conductive patterns |
NL134170C (de) * | 1963-12-17 | 1900-01-01 | ||
US3266127A (en) * | 1964-01-27 | 1966-08-16 | Ibm | Method of forming contacts on semiconductors |
US3443915A (en) * | 1965-03-26 | 1969-05-13 | Westinghouse Electric Corp | High resolution patterns for optical masks and methods for their fabrication |
US3438121A (en) * | 1966-07-21 | 1969-04-15 | Gen Instrument Corp | Method of making a phosphorous-protected semiconductor device |
US3523222A (en) * | 1966-09-15 | 1970-08-04 | Texas Instruments Inc | Semiconductive contacts |
US3537925A (en) * | 1967-03-14 | 1970-11-03 | Gen Electric | Method of forming a fine line apertured film |
US3551196A (en) * | 1968-01-04 | 1970-12-29 | Corning Glass Works | Electrical contact terminations for semiconductors and method of making the same |
US3620795A (en) * | 1968-04-29 | 1971-11-16 | Signetics Corp | Transparent mask and method for making the same |
DE1906755A1 (de) * | 1969-02-11 | 1970-09-03 | Siemens Ag | Verfahren zur Herstellung von Duennschichtstrukturen auf Substraten und nach diesem Verfahren hergestellte Photomaske |
DE1954499A1 (de) * | 1969-10-29 | 1971-05-06 | Siemens Ag | Verfahren zur Herstellung von Halbleiterschaltkreisen mit Leitbahnen |
US3702723A (en) * | 1971-04-23 | 1972-11-14 | American Micro Syst | Segmented master character for electronic display apparatus |
-
1972
- 1972-04-28 NL NL7205767.A patent/NL163370C/xx not_active IP Right Cessation
-
1973
- 1973-04-19 DE DE2319883A patent/DE2319883C3/de not_active Expired
- 1973-04-25 GB GB1959673A patent/GB1435320A/en not_active Expired
- 1973-04-25 CH CH589273A patent/CH555087A/de not_active IP Right Cessation
- 1973-04-25 GB GB1959573A patent/GB1435319A/en not_active Expired
- 1973-04-25 US US00354504A patent/US3822467A/en not_active Expired - Lifetime
- 1973-04-25 SE SE7305819A patent/SE382283B/xx unknown
- 1973-04-25 US US354510A patent/US3928658A/en not_active Expired - Lifetime
- 1973-04-26 ES ES414113A patent/ES414113A1/es not_active Expired
- 1973-04-26 DE DE2321099A patent/DE2321099C3/de not_active Expired
- 1973-04-27 FR FR7315458A patent/FR2182208B1/fr not_active Expired
- 1973-04-27 BR BR3088/73A patent/BR7303088D0/pt unknown
- 1973-04-27 FR FR7315459A patent/FR2182209A1/fr not_active Withdrawn
- 1973-04-27 BE BE130561A patent/BE798883A/xx unknown
- 1973-04-28 JP JP4828973A patent/JPS5636576B2/ja not_active Expired
- 1973-04-28 JP JP4829073A patent/JPS531117B2/ja not_active Expired
- 1973-04-30 CA CA170,743A patent/CA984932A/en not_active Expired
- 1973-04-30 CA CA170,741A patent/CA983177A/en not_active Expired
- 1973-05-09 AU AU55430/73A patent/AU473179B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL163370C (nl) | 1980-08-15 |
FR2182208A1 (de) | 1973-12-07 |
SE382283B (sv) | 1976-01-19 |
NL163370B (nl) | 1980-03-17 |
JPS4955278A (de) | 1974-05-29 |
BR7303088D0 (pt) | 1974-07-11 |
ES414113A1 (es) | 1976-02-01 |
AU473179B2 (en) | 1976-06-17 |
FR2182208B1 (de) | 1978-06-23 |
NL7205767A (de) | 1973-10-30 |
US3822467A (en) | 1974-07-09 |
DE2319883B2 (de) | 1979-08-23 |
GB1435320A (en) | 1976-05-12 |
DE2321099A1 (de) | 1973-11-08 |
BE798883A (fr) | 1973-10-29 |
CA984932A (en) | 1976-03-02 |
GB1435319A (en) | 1976-05-12 |
JPS4949595A (de) | 1974-05-14 |
DE2321099C3 (de) | 1982-01-14 |
FR2182209A1 (de) | 1973-12-07 |
USB354510I5 (de) | 1975-01-28 |
DE2319883C3 (de) | 1982-11-18 |
US3928658A (en) | 1975-12-23 |
JPS5636576B2 (de) | 1981-08-25 |
DE2319883A1 (de) | 1973-11-08 |
CA983177A (en) | 1976-02-03 |
DE2321099B2 (de) | 1979-11-08 |
AU5543073A (en) | 1974-11-14 |
JPS531117B2 (de) | 1978-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH555087A (de) | Verfahren zur herstellung einer halbleiteranordnung mit einem leitermuster und durch dieses verfahren hergestellte halbleiteranordnung. | |
CH542514A (de) | Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung | |
CH531254A (de) | Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung | |
AT330878B (de) | Verfahren zur herstellung einer durchkontaktierten leiterplatte | |
AT333121B (de) | Verfahren zur herstellung einer synthetischen pulpe | |
AT345152B (de) | Verfahren zur herstellung von formkoerpern | |
AT338404B (de) | Verfahren zur herstellung einer faser-filament- oder filmartigen struktur | |
CH524251A (de) | Verfahren zur Herstellung einer Halbleiteranordnung und nach diesem Verfahren hergestellte Halbleiteranordnung | |
CH519789A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH539340A (de) | Halbleiteranordnung mit einem Halbleiterwiderstand und Verfahren zur Herstellung einer derartigen Anordnung | |
AT323809B (de) | Verfahren zur herstellung einer halbleiteranordnung mit einem feldeffekttransistor mit isolierter torelektrode | |
AT322633B (de) | Verfahren zur herstellung einer halbleiteranordnung | |
CH514935A (de) | Verfahren zur Herstellung eines Halbleiterbauelements und durch dieses Verfahren hergestelltes Halbleiterbauelement | |
AT319066B (de) | Verfahren zur Herstellung einer Kennzeichentafel | |
CH527488A (de) | Verfahren zur Herstellung einer Stromschiene | |
CH527487A (de) | Verfahren zur Herstellung einer Stromschiene | |
CH544410A (de) | Halbleiteranordnung und Verfahren zur Herstellung dieser Halbleiteranordnung | |
CH528821A (de) | Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung | |
CH553435A (de) | Verfahren zur herstellung eines koronageneratordrahtes. | |
AT339963B (de) | Verfahren zur herstellung einer halbleiteranordnung mit einem halbleiterkorper mit mindestens einem feldeffekttransistor mit isolierter torelektrode | |
CH447396A (de) | Verfahren und Vorrichtung zur Herstellung einer Maske für die Fertigung von Halbleiter-Schaltelementen | |
AT317337B (de) | Verfahren zur Herstellung von mindestens einer strukturierten metallischen Schicht auf einem Grundkörper | |
AT336798B (de) | Verfahren zur herstellung einer zahnpaste | |
CH554531A (de) | Verfahren zur herstellung einer dichtung und nach diesem verfahren hergestellte dichtung. | |
AT337292B (de) | Verfahren zur herstellung einer leiterplatte |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |