TW200501258A - Method of polishing semiconductor copper interconnect integrated with extremely low dielectric constant material - Google Patents

Method of polishing semiconductor copper interconnect integrated with extremely low dielectric constant material

Info

Publication number
TW200501258A
TW200501258A TW092116479A TW92116479A TW200501258A TW 200501258 A TW200501258 A TW 200501258A TW 092116479 A TW092116479 A TW 092116479A TW 92116479 A TW92116479 A TW 92116479A TW 200501258 A TW200501258 A TW 200501258A
Authority
TW
Taiwan
Prior art keywords
dielectric constant
extremely low
low dielectric
constant material
polishing
Prior art date
Application number
TW092116479A
Other languages
Chinese (zh)
Other versions
TWI302350B (en
Inventor
Wen-Chueh Pan
Jer-Shyong Lai
Yih-Hsing Wang
Yang-Jiann Fann
Chih-Wei Chu
Hsing Liao Chubg
Chaug Liann Hsu
Ming Tseh Tsay
Yeau Ren Jeng
Meng Shiun Tsai
Original Assignee
Chung Shan Inst Of Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chung Shan Inst Of Science filed Critical Chung Shan Inst Of Science
Priority to TW092116479A priority Critical patent/TW200501258A/en
Priority to US10/617,679 priority patent/US20040259481A1/en
Publication of TW200501258A publication Critical patent/TW200501258A/en
Application granted granted Critical
Publication of TWI302350B publication Critical patent/TWI302350B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B24B1/04—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes subjecting the grinding or polishing tools, the abrading or polishing medium or work to vibration, e.g. grinding with ultrasonic frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A method of polishing metal and barrier layer interconnect integrated with an extremely low dielectric constant material in a semiconductor process includes steps of (A) preparing a to-be-polished wafer covered with a copper layer integrated with an extremely low dielectric constant material, (B) treating the copper layer chemically to produce a hard and brittle very near surface layer product formed on the surface of the copper layer, (C) keeping polishing the very near surface layer product by ultrasonic waves, and (D) polishing a barrier layer of the wafer by the ultrasonic waves, thereby achieving polishing effectiveness.
TW092116479A 2003-06-17 2003-06-17 Method of polishing semiconductor copper interconnect integrated with extremely low dielectric constant material TW200501258A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW092116479A TW200501258A (en) 2003-06-17 2003-06-17 Method of polishing semiconductor copper interconnect integrated with extremely low dielectric constant material
US10/617,679 US20040259481A1 (en) 2003-06-17 2003-07-14 Method of polishing semiconductor copper interconnect integrated with extremely low dielectric constant material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW092116479A TW200501258A (en) 2003-06-17 2003-06-17 Method of polishing semiconductor copper interconnect integrated with extremely low dielectric constant material

Publications (2)

Publication Number Publication Date
TW200501258A true TW200501258A (en) 2005-01-01
TWI302350B TWI302350B (en) 2008-10-21

Family

ID=33516546

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092116479A TW200501258A (en) 2003-06-17 2003-06-17 Method of polishing semiconductor copper interconnect integrated with extremely low dielectric constant material

Country Status (2)

Country Link
US (1) US20040259481A1 (en)
TW (1) TW200501258A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112809456A (en) * 2021-01-13 2021-05-18 南京尚吉增材制造研究院有限公司 Micro-nano bubble enhanced plasma polishing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200846137A (en) * 2007-05-17 2008-12-01 Nat Univ Chung Cheng Low-stress polishing apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL163370C (en) * 1972-04-28 1980-08-15 Philips Nv METHOD FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE WITH A CONDUCTOR PATTERN
US5399234A (en) * 1993-09-29 1995-03-21 Motorola Inc. Acoustically regulated polishing process
US5688364A (en) * 1994-12-22 1997-11-18 Sony Corporation Chemical-mechanical polishing method and apparatus using ultrasound applied to the carrier and platen
US6051500A (en) * 1998-05-19 2000-04-18 Lucent Technologies Inc. Device and method for polishing a semiconductor substrate
US6656842B2 (en) * 1999-09-22 2003-12-02 Applied Materials, Inc. Barrier layer buffing after Cu CMP
US6682396B1 (en) * 2000-04-11 2004-01-27 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for linear polishing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112809456A (en) * 2021-01-13 2021-05-18 南京尚吉增材制造研究院有限公司 Micro-nano bubble enhanced plasma polishing method
CN112809456B (en) * 2021-01-13 2023-02-24 南京尚吉增材制造研究院有限公司 Micro-nano bubble enhanced plasma polishing method

Also Published As

Publication number Publication date
TWI302350B (en) 2008-10-21
US20040259481A1 (en) 2004-12-23

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