JPS55154763A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55154763A JPS55154763A JP6261079A JP6261079A JPS55154763A JP S55154763 A JPS55154763 A JP S55154763A JP 6261079 A JP6261079 A JP 6261079A JP 6261079 A JP6261079 A JP 6261079A JP S55154763 A JPS55154763 A JP S55154763A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- film
- regions
- type
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 230000007797 corrosion Effects 0.000 abstract 2
- 238000005260 corrosion Methods 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To reduce the base expansion resistor of a semiconductor device by side- etching an impurity mask when patterning the mask, selectively implanting ion with corrosion resistant mask used thereat, removing the mask, and redistributing the ions. CONSTITUTION:An inpurity mask SiO2 film 11 is coated on an N-type semiconductor, a corrosion-resistant photoresist film 12 is formed thereon, and openings are perforated corresponding to the emitter and collector forming regions. Then, with the film 12 as a mask, the film 11 is selectively etched, and side-etched under the films 11 and 12. Thereafter, with the film 12 used again as a mask an N-type impurity ion is implanted thereon to form regions 14A and 15A, the film 12 is removed, P-type impurity ion is implanted using the exposed film 11 as a mask, and P-type base regions 16 and 17 are formed. simultaneously, new SiO2 films 18 and 19 are produced on the surface, the regions 14A and 15A are redistributed to form N<+>- type emitter region and a collector region 15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6261079A JPS55154763A (en) | 1979-05-23 | 1979-05-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6261079A JPS55154763A (en) | 1979-05-23 | 1979-05-23 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55154763A true JPS55154763A (en) | 1980-12-02 |
Family
ID=13205247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6261079A Pending JPS55154763A (en) | 1979-05-23 | 1979-05-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55154763A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51102472A (en) * | 1971-03-17 | 1976-09-09 | Philips Nv | |
| JPS5223263A (en) * | 1975-08-18 | 1977-02-22 | Nec Corp | Method of manufacturing semiconductor device |
-
1979
- 1979-05-23 JP JP6261079A patent/JPS55154763A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51102472A (en) * | 1971-03-17 | 1976-09-09 | Philips Nv | |
| JPS5223263A (en) * | 1975-08-18 | 1977-02-22 | Nec Corp | Method of manufacturing semiconductor device |
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