NL141330B - Veldeffecttransistor met een besturingspoortelektrode, aangebracht op een dielektrische oxydelaag. - Google Patents
Veldeffecttransistor met een besturingspoortelektrode, aangebracht op een dielektrische oxydelaag.Info
- Publication number
- NL141330B NL141330B NL63297601A NL297601A NL141330B NL 141330 B NL141330 B NL 141330B NL 63297601 A NL63297601 A NL 63297601A NL 297601 A NL297601 A NL 297601A NL 141330 B NL141330 B NL 141330B
- Authority
- NL
- Netherlands
- Prior art keywords
- gate electrode
- oxide layer
- field effect
- effect transistor
- control gate
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/003—Anneal
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/03—Diffusion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/141—Self-alignment coat gate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/92—Controlling diffusion profile by oxidation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22201962A | 1962-09-07 | 1962-09-07 | |
US592581A US3387358A (en) | 1962-09-07 | 1966-11-07 | Method of fabricating semiconductor device |
US62934067A | 1967-02-10 | 1967-02-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL141330B true NL141330B (nl) | 1974-02-15 |
Family
ID=27397020
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL297601D NL297601A (nl) | 1962-09-07 | ||
NL63297601A NL141330B (nl) | 1962-09-07 | 1963-09-06 | Veldeffecttransistor met een besturingspoortelektrode, aangebracht op een dielektrische oxydelaag. |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL297601D NL297601A (nl) | 1962-09-07 |
Country Status (7)
Country | Link |
---|---|
US (2) | US3387358A (nl) |
JP (1) | JPS5111478B1 (nl) |
BE (1) | BE637064A (nl) |
CH (1) | CH431724A (nl) |
DE (1) | DE1464390B2 (nl) |
GB (1) | GB1048475A (nl) |
NL (2) | NL141330B (nl) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3999282A (en) * | 1964-02-13 | 1976-12-28 | Hitachi, Ltd. | Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby |
GB1153428A (en) * | 1965-06-18 | 1969-05-29 | Philips Nv | Improvements in Semiconductor Devices. |
US3509375A (en) * | 1966-10-18 | 1970-04-28 | Honeywell Inc | Switching circuitry for isolating an input and output circuit utilizing a plurality of insulated gate magnetic oxide field effect transistors |
GB1209914A (en) * | 1967-03-29 | 1970-10-21 | Marconi Co Ltd | Improvements in or relating to semi-conductor devices |
US3804681A (en) * | 1967-04-18 | 1974-04-16 | Ibm | Method for making a schottky-barrier field effect transistor |
US3479234A (en) * | 1967-05-01 | 1969-11-18 | Gen Electric | Method of producing field effect transistors |
NL158024B (nl) * | 1967-05-13 | 1978-09-15 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze. |
NL6706735A (nl) * | 1967-05-13 | 1968-11-14 | ||
US3541676A (en) * | 1967-12-18 | 1970-11-24 | Gen Electric | Method of forming field-effect transistors utilizing doped insulators as activator source |
US3824680A (en) * | 1968-03-28 | 1974-07-23 | Levina Fizichesky I I Lebedeva | Nuclear radiation detector and method of manufacturing same |
DE1812059A1 (de) * | 1968-12-02 | 1971-06-09 | Telefunken Patent | Verfahren zum Herstellen einer Halbleiteranordnung |
US3590477A (en) * | 1968-12-19 | 1971-07-06 | Ibm | Method for fabricating insulated-gate field effect transistors having controlled operating characeristics |
JPS4819113B1 (nl) * | 1969-08-27 | 1973-06-11 | ||
US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
US3845495A (en) * | 1971-09-23 | 1974-10-29 | Signetics Corp | High voltage, high frequency double diffused metal oxide semiconductor device |
US3814992A (en) * | 1972-06-22 | 1974-06-04 | Ibm | High performance fet |
US3928095A (en) * | 1972-11-08 | 1975-12-23 | Suwa Seikosha Kk | Semiconductor device and process for manufacturing same |
US3841926A (en) * | 1973-01-02 | 1974-10-15 | Ibm | Integrated circuit fabrication process |
US4123771A (en) * | 1973-09-21 | 1978-10-31 | Tokyo Shibaura Electric Co., Ltd. | Nonvolatile semiconductor memory |
US4108686A (en) * | 1977-07-22 | 1978-08-22 | Rca Corp. | Method of making an insulated gate field effect transistor by implanted double counterdoping |
US4274193A (en) * | 1979-07-05 | 1981-06-23 | Rca Corporation | Method for making a closed gate MOS transistor with self-aligned contacts |
US4272881A (en) * | 1979-07-20 | 1981-06-16 | Rca Corporation | Method for making a closed gate MOS transistor with self-aligned contacts with dual passivation layer |
DE3018988A1 (de) * | 1980-05-17 | 1981-11-26 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Isolierschicht-feldeffekttransistor |
DE3118365A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden |
US5160863A (en) * | 1989-06-30 | 1992-11-03 | Dallas Semiconductor Corporation | Delay circuit using primarily a transistor's parasitic capacitance |
WO1991000649A1 (en) * | 1989-06-30 | 1991-01-10 | Dallas Semiconductor Corporation | Programmable delay circuit |
DE4037492A1 (de) * | 1990-11-26 | 1992-05-27 | Ernst Prof Dr Ing Lueder | Feldeffekttransistor |
US5644155A (en) * | 1994-09-06 | 1997-07-01 | Integrated Device Technology, Inc. | Structure and fabrication of high capacitance insulated-gate field effect transistor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1900018A (en) * | 1928-03-28 | 1933-03-07 | Lilienfeld Julius Edgar | Device for controlling electric current |
US2566666A (en) * | 1948-02-13 | 1951-09-04 | Globe Union Inc | Printed electronic circuit |
US2899344A (en) * | 1958-04-30 | 1959-08-11 | Rinse in | |
NL265382A (nl) * | 1960-03-08 | |||
NL267831A (nl) * | 1960-08-17 | |||
US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
BE636317A (nl) * | 1962-08-23 | 1900-01-01 | ||
US3177100A (en) * | 1963-09-09 | 1965-04-06 | Rca Corp | Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3 |
-
0
- BE BE637064D patent/BE637064A/xx unknown
- NL NL297601D patent/NL297601A/xx unknown
-
1963
- 1963-08-02 CH CH961163A patent/CH431724A/de unknown
- 1963-08-20 GB GB32977/63A patent/GB1048475A/en not_active Expired
- 1963-09-04 DE DE19631464390 patent/DE1464390B2/de active Pending
- 1963-09-06 NL NL63297601A patent/NL141330B/nl not_active IP Right Cessation
-
1966
- 1966-11-07 US US592581A patent/US3387358A/en not_active Expired - Lifetime
-
1967
- 1967-02-10 US US629340A patent/US3513364A/en not_active Expired - Lifetime
-
1972
- 1972-06-15 JP JP47059990A patent/JPS5111478B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1464390A1 (de) | 1969-03-20 |
BE637064A (nl) | |
DE1464390B2 (de) | 1971-01-28 |
US3513364A (en) | 1970-05-19 |
JPS5111478B1 (nl) | 1976-04-12 |
US3387358A (en) | 1968-06-11 |
GB1048475A (en) | 1966-11-16 |
NL297601A (nl) | |
CH431724A (de) | 1967-03-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
V1 | Lapsed because of non-payment of the annual fee | ||
NL80 | Abbreviated name of patent owner mentioned of already nullified patent |
Owner name: RCA |