NL297601A - - Google Patents

Info

Publication number
NL297601A
NL297601A NL297601DA NL297601A NL 297601 A NL297601 A NL 297601A NL 297601D A NL297601D A NL 297601DA NL 297601 A NL297601 A NL 297601A
Authority
NL
Netherlands
Application number
Inventor
Frederic P Heiman
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL297601A publication Critical patent/NL297601A/xx
Priority to US22201962A priority Critical
Priority to US59258166 priority patent/US3387358A/en
Priority to US62934067A priority

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/003Anneal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/03Diffusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/141Self-alignment coat gate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/92Controlling diffusion profile by oxidation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/981Utilizing varying dielectric thickness
NL297601D 1962-09-07 NL297601A (xx)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US22201962A true 1962-09-07 1962-09-07
US59258166 US3387358A (en) 1962-09-07 1966-11-07 Method of fabricating semiconductor device
US62934067A true 1967-02-10 1967-02-10

Publications (1)

Publication Number Publication Date
NL297601A true NL297601A (xx)

Family

ID=27397020

Family Applications (2)

Application Number Title Priority Date Filing Date
NL297601D NL297601A (xx) 1962-09-07
NL297601A NL141330B (nl) 1962-09-07 1963-09-06 Veldeffecttransistor met een besturingspoortelektrode, aangebracht op een dielektrische oxydelaag.

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL297601A NL141330B (nl) 1962-09-07 1963-09-06 Veldeffecttransistor met een besturingspoortelektrode, aangebracht op een dielektrische oxydelaag.

Country Status (7)

Country Link
US (2) US3387358A (xx)
JP (1) JPS5111478B1 (xx)
BE (1) BE637064A (xx)
CH (1) CH431724A (xx)
DE (1) DE1464390B2 (xx)
GB (1) GB1048475A (xx)
NL (2) NL141330B (xx)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999282A (en) * 1964-02-13 1976-12-28 Hitachi, Ltd. Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby
GB1153428A (en) * 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
US3509375A (en) * 1966-10-18 1970-04-28 Honeywell Inc Switching circuitry for isolating an input and output circuit utilizing a plurality of insulated gate magnetic oxide field effect transistors
GB1209914A (en) * 1967-03-29 1970-10-21 Marconi Co Ltd Improvements in or relating to semi-conductor devices
US3804681A (en) * 1967-04-18 1974-04-16 Ibm Method for making a schottky-barrier field effect transistor
US3479234A (en) * 1967-05-01 1969-11-18 Gen Electric Method of producing field effect transistors
NL6706735A (xx) * 1967-05-13 1968-11-14
NL158024B (nl) * 1967-05-13 1978-09-15 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.
US3541676A (en) * 1967-12-18 1970-11-24 Gen Electric Method of forming field-effect transistors utilizing doped insulators as activator source
US3824680A (en) * 1968-03-28 1974-07-23 Levina Fizichesky I I Lebedeva Nuclear radiation detector and method of manufacturing same
DE1812059A1 (de) * 1968-12-02 1971-06-09 Telefunken Patent Verfahren zum Herstellen einer Halbleiteranordnung
US3590477A (en) * 1968-12-19 1971-07-06 Ibm Method for fabricating insulated-gate field effect transistors having controlled operating characeristics
JPS4819113B1 (xx) * 1969-08-27 1973-06-11
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
US3814992A (en) * 1972-06-22 1974-06-04 Ibm High performance fet
US3928095A (en) * 1972-11-08 1975-12-23 Suwa Seikosha Kk Semiconductor device and process for manufacturing same
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
US4123771A (en) * 1973-09-21 1978-10-31 Tokyo Shibaura Electric Co., Ltd. Nonvolatile semiconductor memory
US4108686A (en) * 1977-07-22 1978-08-22 Rca Corp. Method of making an insulated gate field effect transistor by implanted double counterdoping
US4274193A (en) * 1979-07-05 1981-06-23 Rca Corporation Method for making a closed gate MOS transistor with self-aligned contacts
US4272881A (en) * 1979-07-20 1981-06-16 Rca Corporation Method for making a closed gate MOS transistor with self-aligned contacts with dual passivation layer
DE3018988A1 (de) * 1980-05-17 1981-11-26 Itt Ind Gmbh Deutsche Isolierschicht-feldeffekttransistor
DE3118365C2 (xx) * 1981-05-08 1990-02-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
US5160863A (en) * 1989-06-30 1992-11-03 Dallas Semiconductor Corporation Delay circuit using primarily a transistor's parasitic capacitance
WO1991000649A1 (en) * 1989-06-30 1991-01-10 Dallas Semiconductor Corporation Programmable delay circuit
DE4037492A1 (de) * 1990-11-26 1992-05-27 Ernst Prof Dr Ing Lueder Feldeffekttransistor
US5644155A (en) * 1994-09-06 1997-07-01 Integrated Device Technology, Inc. Structure and fabrication of high capacitance insulated-gate field effect transistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1900018A (en) * 1928-03-28 1933-03-07 Lilienfeld Julius Edgar Device for controlling electric current
US2566666A (en) * 1948-02-13 1951-09-04 Globe Union Inc Printed electronic circuit
US2899344A (en) * 1958-04-30 1959-08-11 Rinse in
NL265382A (xx) * 1960-03-08
NL267831A (xx) * 1960-08-17
US3200019A (en) * 1962-01-19 1965-08-10 Rca Corp Method for making a semiconductor device
NL302804A (xx) * 1962-08-23 1900-01-01
US3177100A (en) * 1963-09-09 1965-04-06 Rca Corp Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3

Also Published As

Publication number Publication date
US3513364A (en) 1970-05-19
DE1464390A1 (de) 1969-03-20
BE637064A (xx)
US3387358A (en) 1968-06-11
JPS5111478B1 (xx) 1976-04-12
GB1048475A (en) 1966-11-16
NL141330B (nl) 1974-02-15
CH431724A (de) 1967-03-15
DE1464390B2 (xx) 1971-01-28

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