CH622127A5 - - Google Patents
Download PDFInfo
- Publication number
- CH622127A5 CH622127A5 CH1575977A CH1575977A CH622127A5 CH 622127 A5 CH622127 A5 CH 622127A5 CH 1575977 A CH1575977 A CH 1575977A CH 1575977 A CH1575977 A CH 1575977A CH 622127 A5 CH622127 A5 CH 622127A5
- Authority
- CH
- Switzerland
- Prior art keywords
- thyristor
- emitter
- gate
- cathode
- ring
- Prior art date
Links
- 238000001465 metallisation Methods 0.000 claims description 7
- 230000001427 coherent effect Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1575977A CH622127A5 (es) | 1977-12-21 | 1977-12-21 | |
| DE19782802599 DE2802599A1 (de) | 1977-12-21 | 1978-01-21 | Anodenquerfeldemitter |
| EP78200136A EP0002840B1 (de) | 1977-12-21 | 1978-08-07 | Kathodenseitig steuerbarer Thyristor mit einer Anodenzone aus zwei aneinandergrenzenden Bereichen mit unterschiedlicher Leitfähigkeit |
| JP11058078A JPS5487487A (en) | 1977-12-21 | 1978-09-08 | Thyristor controllable at cathode side |
| US05/950,320 US4223332A (en) | 1977-12-21 | 1978-10-11 | Thyristor having an anode transverse field emitter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1575977A CH622127A5 (es) | 1977-12-21 | 1977-12-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH622127A5 true CH622127A5 (es) | 1981-03-13 |
Family
ID=4411694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1575977A CH622127A5 (es) | 1977-12-21 | 1977-12-21 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4223332A (es) |
| EP (1) | EP0002840B1 (es) |
| JP (1) | JPS5487487A (es) |
| CH (1) | CH622127A5 (es) |
| DE (1) | DE2802599A1 (es) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2830735C2 (de) * | 1978-07-13 | 1982-11-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristortriode mit integriertem Hilfsthyristor und Verfahren zu ihrer Herstellung |
| DE3017584C2 (de) * | 1980-05-08 | 1982-12-23 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Thyristor |
| IT1212799B (it) * | 1983-12-15 | 1989-11-30 | Ates Componenti Elettron | Dispositivo elettronico ad interruttore comandato per la soppressione di transitori. |
| JPS60187058A (ja) * | 1984-03-07 | 1985-09-24 | Hitachi Ltd | 半導体装置 |
| US5049965A (en) * | 1987-11-20 | 1991-09-17 | Siemens Aktiengesellschaft | Thyristor having adjustable breakover voltage and method of manufacture |
| GB2238510A (en) * | 1989-11-09 | 1991-06-05 | Dataproducts Corp | Absorbent sheets for cleaning and absorbing ink from ink-jet printheads |
| JP5976640B2 (ja) * | 2010-06-21 | 2016-08-23 | アーベーベー・テヒノロギー・アーゲー | 局所のエミッタ短絡ドットの改善されたパターンを持つ位相制御サイリスタ |
| CN102468330A (zh) * | 2010-11-09 | 2012-05-23 | 杭州汉安半导体有限公司 | 一种短路点新型布局的快速晶闸管 |
| EP3304600B1 (en) | 2015-05-29 | 2018-10-17 | ABB Schweiz AG | Thyristor with improved plasma spreading |
| JP6454443B2 (ja) * | 2015-09-11 | 2019-01-16 | アーベーベー・シュバイツ・アーゲー | フラットゲート転流型サイリスタ |
| US11056582B2 (en) | 2018-02-13 | 2021-07-06 | Abb Power Grids Switzerland Ag | Bidirectional phase controlled thyristor (BiPCT)—a new semiconductor device concept |
| JP7094729B2 (ja) * | 2018-03-09 | 2022-07-04 | 新電元工業株式会社 | 半導体装置 |
| DE102022120612A1 (de) * | 2022-08-16 | 2024-02-22 | Infineon Technologies Bipolar Gmbh & Co. Kg | Halbleiterbauelement |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL265766A (es) * | 1960-06-10 | |||
| US3341380A (en) * | 1964-12-28 | 1967-09-12 | Gen Electric | Method of producing semiconductor devices |
| FR1483998A (es) * | 1965-05-14 | 1967-09-13 | ||
| FR1513238A (fr) * | 1966-04-19 | 1968-02-16 | Silec Liaisons Elec | Thyristor à temps d'extinction court |
| US3599061A (en) * | 1969-09-30 | 1971-08-10 | Usa | Scr emitter short patterns |
| CH542515A (de) * | 1972-03-15 | 1973-09-30 | Bbc Brown Boveri & Cie | Thyristor |
| US4089024A (en) * | 1972-09-20 | 1978-05-09 | Hitachi, Ltd. | Semiconductor switching device |
| DE2351783C3 (de) * | 1973-10-16 | 1982-02-11 | Brown, Boveri & Cie Ag, 6800 Mannheim | Zweiweg-Halbleiterschalter (Triac) |
| US4053922A (en) * | 1976-05-19 | 1977-10-11 | General Electric Company | Light triggered thyristor having controlled turn on delay |
| CH594984A5 (es) * | 1976-06-02 | 1978-01-31 | Bbc Brown Boveri & Cie | |
| CH598696A5 (es) * | 1976-10-08 | 1978-05-12 | Bbc Brown Boveri & Cie |
-
1977
- 1977-12-21 CH CH1575977A patent/CH622127A5/de not_active IP Right Cessation
-
1978
- 1978-01-21 DE DE19782802599 patent/DE2802599A1/de not_active Ceased
- 1978-08-07 EP EP78200136A patent/EP0002840B1/de not_active Expired
- 1978-09-08 JP JP11058078A patent/JPS5487487A/ja active Granted
- 1978-10-11 US US05/950,320 patent/US4223332A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE2802599A1 (de) | 1979-07-05 |
| EP0002840A1 (de) | 1979-07-11 |
| EP0002840B1 (de) | 1981-08-05 |
| JPS6243548B2 (es) | 1987-09-14 |
| US4223332A (en) | 1980-09-16 |
| JPS5487487A (en) | 1979-07-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |