FR1513238A - Thyristor à temps d'extinction court - Google Patents

Thyristor à temps d'extinction court

Info

Publication number
FR1513238A
FR1513238A FR58073A FR58073A FR1513238A FR 1513238 A FR1513238 A FR 1513238A FR 58073 A FR58073 A FR 58073A FR 58073 A FR58073 A FR 58073A FR 1513238 A FR1513238 A FR 1513238A
Authority
FR
France
Prior art keywords
extinction time
time thyristor
short extinction
short
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR58073A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Industrielle de Liaisons Electriques SA
Original Assignee
Societe Industrielle de Liaisons Electriques SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Industrielle de Liaisons Electriques SA filed Critical Societe Industrielle de Liaisons Electriques SA
Priority to FR58073A priority Critical patent/FR1513238A/fr
Priority to DE1967S0109366 priority patent/DE1614500C3/de
Application granted granted Critical
Publication of FR1513238A publication Critical patent/FR1513238A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR58073A 1966-04-19 1966-04-19 Thyristor à temps d'extinction court Expired FR1513238A (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR58073A FR1513238A (fr) 1966-04-19 1966-04-19 Thyristor à temps d'extinction court
DE1967S0109366 DE1614500C3 (de) 1966-04-19 1967-04-17 Thyristor mit kurzer Löschzeit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR58073A FR1513238A (fr) 1966-04-19 1966-04-19 Thyristor à temps d'extinction court

Publications (1)

Publication Number Publication Date
FR1513238A true FR1513238A (fr) 1968-02-16

Family

ID=8606526

Family Applications (1)

Application Number Title Priority Date Filing Date
FR58073A Expired FR1513238A (fr) 1966-04-19 1966-04-19 Thyristor à temps d'extinction court

Country Status (2)

Country Link
DE (1) DE1614500C3 (fr)
FR (1) FR1513238A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979767A (en) * 1971-06-24 1976-09-07 Mitsubishi Denki Kabushiki Kaisha Multilayer P-N junction semiconductor switching device having a low resistance path across said P-N junction
EP0001433A1 (fr) * 1977-10-08 1979-04-18 BROWN, BOVERI & CIE Aktiengesellschaft Mannheim Dispositif bidirectionnel de commutation à semi-conducteur (Triac)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH622127A5 (fr) * 1977-12-21 1981-03-13 Bbc Brown Boveri & Cie
US5049965A (en) * 1987-11-20 1991-09-17 Siemens Aktiengesellschaft Thyristor having adjustable breakover voltage and method of manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1186554B (de) * 1961-09-27 1965-02-04 Licentia Gmbh Steuerbarer Halbleitergleichrichter mit vier oder mehreren Halbleiterschichten und Verfahren zum Herstellen
FR1429676A (fr) * 1964-04-01 1966-02-25 Westinghouse Electric Corp Redresseur commandé à semi-conducteur ayant un émetteur en court-circuit
GB1049417A (en) * 1964-06-12 1966-11-30 Westinghouse Brake & Signal Semi-conductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979767A (en) * 1971-06-24 1976-09-07 Mitsubishi Denki Kabushiki Kaisha Multilayer P-N junction semiconductor switching device having a low resistance path across said P-N junction
EP0001433A1 (fr) * 1977-10-08 1979-04-18 BROWN, BOVERI & CIE Aktiengesellschaft Mannheim Dispositif bidirectionnel de commutation à semi-conducteur (Triac)

Also Published As

Publication number Publication date
DE1614500A1 (de) 1970-07-09
DE1614500B2 (de) 1977-09-01
DE1614500C3 (de) 1983-12-29

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