ES327989A1 - Un dispositivo semiconductor. - Google Patents
Un dispositivo semiconductor.Info
- Publication number
- ES327989A1 ES327989A1 ES0327989A ES327989A ES327989A1 ES 327989 A1 ES327989 A1 ES 327989A1 ES 0327989 A ES0327989 A ES 0327989A ES 327989 A ES327989 A ES 327989A ES 327989 A1 ES327989 A1 ES 327989A1
- Authority
- ES
- Spain
- Prior art keywords
- translation
- semiconductor device
- machine
- legally binding
- google translate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB25874/65A GB1153428A (en) | 1965-06-18 | 1965-06-18 | Improvements in Semiconductor Devices. |
Publications (1)
Publication Number | Publication Date |
---|---|
ES327989A1 true ES327989A1 (es) | 1967-04-01 |
Family
ID=10234780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES0327989A Expired ES327989A1 (es) | 1965-06-18 | 1966-06-16 | Un dispositivo semiconductor. |
Country Status (10)
Country | Link |
---|---|
US (1) | US3745425A (es) |
AT (1) | AT263084B (es) |
BE (1) | BE682752A (es) |
CH (1) | CH466434A (es) |
DE (2) | DE1789206C3 (es) |
DK (1) | DK119016B (es) |
ES (1) | ES327989A1 (es) |
GB (1) | GB1153428A (es) |
NL (1) | NL156268B (es) |
SE (1) | SE344656B (es) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH461646A (de) * | 1967-04-18 | 1968-08-31 | Ibm | Feld-Effekt-Transistor und Verfahren zu seiner Herstellung |
DE2000093C2 (de) * | 1970-01-02 | 1982-04-01 | 6000 Frankfurt Licentia Patent-Verwaltungs-Gmbh | Feldeffekttransistor |
JPS4936514B1 (es) * | 1970-05-13 | 1974-10-01 | ||
JPS5123432B2 (es) * | 1971-08-26 | 1976-07-16 | ||
US3927418A (en) * | 1971-12-11 | 1975-12-16 | Sony Corp | Charge transfer device |
JPS5024084A (es) * | 1973-07-05 | 1975-03-14 | ||
DE2812049C2 (de) * | 1974-09-20 | 1982-05-27 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
US4011105A (en) * | 1975-09-15 | 1977-03-08 | Mos Technology, Inc. | Field inversion control for n-channel device integrated circuits |
GB1569897A (en) * | 1975-12-31 | 1980-06-25 | Ibm | Field effect transistor |
JPS52131483A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Mis-type semiconductor device |
NL7606483A (nl) * | 1976-06-16 | 1977-12-20 | Philips Nv | Inrichting voor het mengen van signalen. |
US4350991A (en) * | 1978-01-06 | 1982-09-21 | International Business Machines Corp. | Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance |
JPS54125986A (en) * | 1978-03-23 | 1979-09-29 | Handotai Kenkyu Shinkokai | Semiconductor including insulated gate type transistor |
US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
US4274105A (en) * | 1978-12-29 | 1981-06-16 | International Business Machines Corporation | MOSFET Substrate sensitivity control |
US5130767C1 (en) * | 1979-05-14 | 2001-08-14 | Int Rectifier Corp | Plural polygon source pattern for mosfet |
US5348898A (en) * | 1979-05-25 | 1994-09-20 | Hitachi, Ltd. | Semiconductor device and method for manufacturing the same |
JPS55156370A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Manufacture of semiconductor device |
JPS56155572A (en) * | 1980-04-30 | 1981-12-01 | Sanyo Electric Co Ltd | Insulated gate field effect type semiconductor device |
DE3208500A1 (de) * | 1982-03-09 | 1983-09-15 | Siemens AG, 1000 Berlin und 8000 München | Spannungsfester mos-transistor fuer hoechstintegrierte schaltungen |
EP0122313B1 (de) * | 1983-04-18 | 1987-01-07 | Deutsche ITT Industries GmbH | Verfahren zum Herstellen einer monolithisch integrierten Schaltung mit mindestens einem integrierten Isolierschicht-Feldeffekttransistor |
JPS60123055A (ja) * | 1983-12-07 | 1985-07-01 | Fujitsu Ltd | 半導体装置及びその製造方法 |
EP0436038A4 (en) * | 1989-07-14 | 1991-09-04 | Seiko Instruments & Electronics Ltd. | Semiconductor device and method of producing the same |
KR960002100B1 (ko) * | 1993-03-27 | 1996-02-10 | 삼성전자주식회사 | 전하결합소자형 이미지센서 |
DE4415568C2 (de) * | 1994-05-03 | 1996-03-07 | Siemens Ag | Herstellungsverfahren für MOSFETs mit LDD |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE545324A (es) | 1955-02-18 | |||
US2869055A (en) * | 1957-09-20 | 1959-01-13 | Beckman Instruments Inc | Field effect transistor |
NL267831A (es) | 1960-08-17 | |||
NL297601A (es) | 1962-09-07 | Rca Corp |
-
1965
- 1965-06-18 GB GB25874/65A patent/GB1153428A/en not_active Expired
-
1966
- 1966-06-15 SE SE8214/66A patent/SE344656B/xx unknown
- 1966-06-15 DK DK308366AA patent/DK119016B/da unknown
- 1966-06-15 NL NL6608260.A patent/NL156268B/xx not_active IP Right Cessation
- 1966-06-16 ES ES0327989A patent/ES327989A1/es not_active Expired
- 1966-06-16 AT AT576966A patent/AT263084B/de active
- 1966-06-16 CH CH872066A patent/CH466434A/de unknown
- 1966-06-17 BE BE682752D patent/BE682752A/xx not_active IP Right Cessation
- 1966-06-17 US US00558427A patent/US3745425A/en not_active Expired - Lifetime
- 1966-06-18 DE DE1789206A patent/DE1789206C3/de not_active Expired
- 1966-06-18 DE DE1564411A patent/DE1564411C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL156268B (nl) | 1978-03-15 |
AT263084B (de) | 1968-07-10 |
CH466434A (de) | 1968-12-15 |
US3745425A (en) | 1973-07-10 |
SE344656B (es) | 1972-04-24 |
NL6608260A (es) | 1966-12-19 |
DE1564411C3 (de) | 1981-02-05 |
BE682752A (es) | 1966-12-19 |
DK119016B (da) | 1970-11-02 |
DE1789206C3 (de) | 1984-02-02 |
DE1564411B2 (de) | 1973-10-31 |
DE1564411A1 (de) | 1969-07-24 |
GB1153428A (en) | 1969-05-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES327989A1 (es) | Un dispositivo semiconductor. | |
ES326632A1 (es) | Un dispositivo semiconductor. | |
ES375322A1 (es) | Perfeccionamientos en la construccion de estructuras de se-miconductores. | |
ES319914A1 (es) | Un dispositivo transitor de efecto de campo de barrera aislada. | |
ES315030A1 (es) | Un dispositivo semiconductor de efecto de campo de portal aislado. | |
ES442755A1 (es) | Un dispositivo transistor de efecto de campo mejorado. | |
KR840009183A (ko) | 반도체 장치 | |
GB1060208A (en) | Avalanche transistor | |
GB1331761A (en) | Epi base high speed power transistor | |
ES420364A1 (es) | Un dispositivo de semiconductor. | |
ES404386A1 (es) | Un dispositivo semiconductor. | |
KR840000081A (ko) | 반도체 메모리 | |
KR850005169A (ko) | 우물영역을 갖는 반도체기판상에 형성되는 mis형 반도체장치 | |
ES360290A1 (es) | Perfeccionamientos en la construccion de dispositivos semi-conductores. | |
GB1304741A (es) | ||
GB1334745A (en) | Semiconductor devices | |
UST964009I4 (en) | High voltage semiconductor structure | |
ES321146A1 (es) | Un dispositivo semiconductor. | |
ES482691A1 (es) | Un dispositivo semiconductor. | |
ES329361A1 (es) | Un dispositivo semiconductor de union. | |
GB1318047A (en) | Insulated gate field effect transistors | |
ES364523A1 (es) | Dispositivo semiconductor | |
ES294824A1 (es) | Un metodo para fabricar un dispositivo semiconductor | |
GB1037850A (en) | Improvements in or relating to semiconductor devices | |
GB1208030A (en) | A semiconductor device |