CH466434A - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
CH466434A
CH466434A CH872066A CH872066A CH466434A CH 466434 A CH466434 A CH 466434A CH 872066 A CH872066 A CH 872066A CH 872066 A CH872066 A CH 872066A CH 466434 A CH466434 A CH 466434A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
CH872066A
Other languages
English (en)
Inventor
Anthony Beal Julian Robert
Francis Beer Andrew
Klein Thomas
Malcolm St John Murphy Nigel
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH466434A publication Critical patent/CH466434A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CH872066A 1965-06-18 1966-06-16 Halbleitervorrichtung CH466434A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB25874/65A GB1153428A (en) 1965-06-18 1965-06-18 Improvements in Semiconductor Devices.

Publications (1)

Publication Number Publication Date
CH466434A true CH466434A (de) 1968-12-15

Family

ID=10234780

Family Applications (1)

Application Number Title Priority Date Filing Date
CH872066A CH466434A (de) 1965-06-18 1966-06-16 Halbleitervorrichtung

Country Status (10)

Country Link
US (1) US3745425A (de)
AT (1) AT263084B (de)
BE (1) BE682752A (de)
CH (1) CH466434A (de)
DE (2) DE1789206C3 (de)
DK (1) DK119016B (de)
ES (1) ES327989A1 (de)
GB (1) GB1153428A (de)
NL (1) NL156268B (de)
SE (1) SE344656B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007478A (en) * 1971-08-26 1977-02-08 Sony Corporation Field effect transistor
US4334235A (en) * 1978-03-23 1982-06-08 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated gate type semiconductor device

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
DE2000093C2 (de) * 1970-01-02 1982-04-01 6000 Frankfurt Licentia Patent-Verwaltungs-Gmbh Feldeffekttransistor
JPS4936514B1 (de) * 1970-05-13 1974-10-01
US3927418A (en) * 1971-12-11 1975-12-16 Sony Corp Charge transfer device
JPS5024084A (de) * 1973-07-05 1975-03-14
DE2812049C2 (de) * 1974-09-20 1982-05-27 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
US4011105A (en) * 1975-09-15 1977-03-08 Mos Technology, Inc. Field inversion control for n-channel device integrated circuits
GB1569897A (en) * 1975-12-31 1980-06-25 Ibm Field effect transistor
JPS52131483A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Mis-type semiconductor device
NL7606483A (nl) * 1976-06-16 1977-12-20 Philips Nv Inrichting voor het mengen van signalen.
US4350991A (en) * 1978-01-06 1982-09-21 International Business Machines Corp. Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
US5348898A (en) * 1979-05-25 1994-09-20 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
JPS55156370A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Manufacture of semiconductor device
JPS56155572A (en) * 1980-04-30 1981-12-01 Sanyo Electric Co Ltd Insulated gate field effect type semiconductor device
DE3208500A1 (de) * 1982-03-09 1983-09-15 Siemens AG, 1000 Berlin und 8000 München Spannungsfester mos-transistor fuer hoechstintegrierte schaltungen
EP0122313B1 (de) * 1983-04-18 1987-01-07 Deutsche ITT Industries GmbH Verfahren zum Herstellen einer monolithisch integrierten Schaltung mit mindestens einem integrierten Isolierschicht-Feldeffekttransistor
JPS60123055A (ja) * 1983-12-07 1985-07-01 Fujitsu Ltd 半導体装置及びその製造方法
EP0436038A4 (en) * 1989-07-14 1991-09-04 Seiko Instruments & Electronics Ltd. Semiconductor device and method of producing the same
KR960002100B1 (ko) * 1993-03-27 1996-02-10 삼성전자주식회사 전하결합소자형 이미지센서
DE4415568C2 (de) * 1994-05-03 1996-03-07 Siemens Ag Herstellungsverfahren für MOSFETs mit LDD
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL202404A (de) 1955-02-18
US2869055A (en) * 1957-09-20 1959-01-13 Beckman Instruments Inc Field effect transistor
NL267831A (de) 1960-08-17
NL297601A (de) 1962-09-07 Rca Corp

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007478A (en) * 1971-08-26 1977-02-08 Sony Corporation Field effect transistor
US4334235A (en) * 1978-03-23 1982-06-08 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated gate type semiconductor device

Also Published As

Publication number Publication date
NL6608260A (de) 1966-12-19
DE1564411B2 (de) 1973-10-31
DE1564411A1 (de) 1969-07-24
DE1789206C3 (de) 1984-02-02
US3745425A (en) 1973-07-10
DK119016B (da) 1970-11-02
BE682752A (de) 1966-12-19
GB1153428A (en) 1969-05-29
NL156268B (nl) 1978-03-15
ES327989A1 (es) 1967-04-01
SE344656B (de) 1972-04-24
DE1564411C3 (de) 1981-02-05
AT263084B (de) 1968-07-10

Similar Documents

Publication Publication Date Title
FR1479917A (fr) Dispositif semi-conducteur
AT263084B (de) Halbleitervorrichtung
CH470085A (de) Halbleitervorrichtung
CH474851A (de) Halbleiteranordnung
FR1475436A (fr) Dispositif semi-conducteur
AT264589B (de) Halbleiteranordnung
AT269217B (de) Halbleitervorrichtung
BR6677894D0 (pt) Dispositivo semicondutor
CH437539A (de) Halbleiteranordnung
CH438497A (de) Halbleiteranordnung
FR1489272A (fr) Dispositif semi-conducteur
AT273227B (de) Halbleitervorrichtung
AT254987B (de) Halbleiteranordnung
CH469357A (de) Halbleiteranordnung
AT265432B (de) Halbleiterbauelement
AT271583B (de) Optoelektronische Halbleiteranordnung
CH444318A (de) Halbleiterbauelement
CH443492A (de) Halbleiteranordnung
FR1481737A (fr) Semi-conducteur
CH446539A (de) Halbleiterbauelement
AT266218B (de) Halbleiterbauelement
FR1471729A (fr) Dispositif semi-conducteur
FR1470898A (fr) Dispositif semi-conducteur
AT266921B (de) Halbleitervorrichtung
CH484520A (de) Halbleitervorrichtung