NL267831A - - Google Patents
Info
- Publication number
- NL267831A NL267831A NL267831DA NL267831A NL 267831 A NL267831 A NL 267831A NL 267831D A NL267831D A NL 267831DA NL 267831 A NL267831 A NL 267831A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Cold Cathode And The Manufacture (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50156A US3056888A (en) | 1960-08-17 | 1960-08-17 | Semiconductor triode |
Publications (1)
Publication Number | Publication Date |
---|---|
NL267831A true NL267831A (de) |
Family
ID=21963656
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL267831D NL267831A (de) | 1960-08-17 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3056888A (de) |
BE (1) | BE606948A (de) |
DE (1) | DE1181328B (de) |
GB (1) | GB993314A (de) |
NL (1) | NL267831A (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL299911A (de) * | 1951-08-02 | |||
NL265382A (de) * | 1960-03-08 | |||
DE1160106B (de) * | 1960-11-11 | 1963-12-27 | Intermetall | Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen |
NL274830A (de) * | 1961-04-12 | |||
US3197681A (en) * | 1961-09-29 | 1965-07-27 | Texas Instruments Inc | Semiconductor devices with heavily doped region to prevent surface inversion |
NL293292A (de) * | 1962-06-11 | |||
NL297002A (de) * | 1962-08-23 | 1900-01-01 | ||
NL297602A (de) * | 1962-09-07 | |||
BE637064A (de) * | 1962-09-07 | Rca Corp | ||
US3268827A (en) * | 1963-04-01 | 1966-08-23 | Rca Corp | Insulated-gate field-effect transistor amplifier having means to reduce high frequency instability |
NL302841A (de) * | 1963-01-02 | |||
NL132570C (de) * | 1963-03-07 | |||
GB1052379A (de) * | 1963-03-28 | 1900-01-01 | ||
US3267389A (en) * | 1963-04-10 | 1966-08-16 | Burroughs Corp | Quantum mechanical tunnel injection amplifying apparatus |
US3472703A (en) * | 1963-06-06 | 1969-10-14 | Hitachi Ltd | Method for producing semiconductor devices |
US3360736A (en) * | 1963-09-10 | 1967-12-26 | Hitachi Ltd | Two input field effect transistor amplifier |
DE1228343B (de) * | 1963-10-22 | 1966-11-10 | Siemens Ag | Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie |
US3273066A (en) * | 1963-12-20 | 1966-09-13 | Litton Systems Inc | Apparatus for detecting changes in the atmospheric electric field |
GB1094068A (en) * | 1963-12-26 | 1967-12-06 | Rca Corp | Semiconductive devices and methods of producing them |
GB1100124A (en) * | 1964-02-13 | 1968-01-24 | Hitachi Ltd | Semiconductor devices and methods for producing the same |
US3339272A (en) * | 1964-05-28 | 1967-09-05 | Gen Motors Corp | Method of forming contacts in semiconductor devices |
USB381501I5 (de) * | 1964-07-09 | |||
US3358195A (en) * | 1964-07-24 | 1967-12-12 | Motorola Inc | Remote cutoff field effect transistor |
US3339128A (en) * | 1964-07-31 | 1967-08-29 | Rca Corp | Insulated offset gate field effect transistor |
GB1095412A (de) * | 1964-08-26 | |||
FR1424482A (fr) * | 1964-12-01 | 1966-01-14 | Csf | élément de circuit électrique intégré à réactance inductive |
US3414781A (en) * | 1965-01-22 | 1968-12-03 | Hughes Aircraft Co | Field effect transistor having interdigitated source and drain and overlying, insulated gate |
US3391282A (en) * | 1965-02-19 | 1968-07-02 | Fairchild Camera Instr Co | Variable length photodiode using an inversion plate |
GB1153428A (en) | 1965-06-18 | 1969-05-29 | Philips Nv | Improvements in Semiconductor Devices. |
US3445924A (en) * | 1965-06-30 | 1969-05-27 | Ibm | Method for fabricating insulated-gate field effect transistors having controlled operating characteristics |
US3396317A (en) * | 1965-11-30 | 1968-08-06 | Texas Instruments Inc | Surface-oriented high frequency diode |
US3336486A (en) * | 1966-09-06 | 1967-08-15 | Energy Conversion Devices Inc | Control system having multiple electrode current controlling device |
GB1173150A (en) * | 1966-12-13 | 1969-12-03 | Associated Semiconductor Mft | Improvements in Insulated Gate Field Effect Transistors |
DE1589683A1 (de) * | 1967-04-04 | 1970-03-26 | Itt Ind Gmbh Deutsche | Flaechentransistor |
US3497776A (en) * | 1968-03-06 | 1970-02-24 | Westinghouse Electric Corp | Uniform avalanche-breakdown rectifiers |
US3535600A (en) * | 1968-10-10 | 1970-10-20 | Gen Electric | Mos varactor diode |
US3590477A (en) * | 1968-12-19 | 1971-07-06 | Ibm | Method for fabricating insulated-gate field effect transistors having controlled operating characeristics |
US3600647A (en) * | 1970-03-02 | 1971-08-17 | Gen Electric | Field-effect transistor with reduced drain-to-substrate capacitance |
US3611070A (en) * | 1970-06-15 | 1971-10-05 | Gen Electric | Voltage-variable capacitor with controllably extendible pn junction region |
US3648127A (en) * | 1970-09-28 | 1972-03-07 | Fairchild Camera Instr Co | Reach through or punch{13 through breakdown for gate protection in mos devices |
CN107635769B (zh) | 2015-05-19 | 2020-09-15 | 康宁股份有限公司 | 使片材与载体粘结的制品和方法 |
TWI810161B (zh) | 2016-08-31 | 2023-08-01 | 美商康寧公司 | 具以可控制式黏結的薄片之製品及製作其之方法 |
JP7260523B2 (ja) | 2017-08-18 | 2023-04-18 | コーニング インコーポレイテッド | ポリカチオン性高分子を使用した一時的結合 |
CN111615567B (zh) * | 2017-12-15 | 2023-04-14 | 康宁股份有限公司 | 用于处理基板的方法和用于制备包括粘合片材的制品的方法 |
CN112259428A (zh) * | 2020-10-23 | 2021-01-22 | 陕西科技大学 | 一种平面型纳米沟道真空场发射三极管装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2617865A (en) * | 1948-06-17 | 1952-11-11 | Bell Telephone Labor Inc | Semiconductor amplifier and electrode structures therefor |
NL97896C (de) * | 1955-02-18 |
-
0
- NL NL267831D patent/NL267831A/xx unknown
-
1960
- 1960-08-17 US US50156A patent/US3056888A/en not_active Expired - Lifetime
-
1961
- 1961-07-29 DE DEW30439A patent/DE1181328B/de active Pending
- 1961-08-03 GB GB28272/61A patent/GB993314A/en not_active Expired
- 1961-08-04 BE BE606948A patent/BE606948A/fr unknown
Also Published As
Publication number | Publication date |
---|---|
DE1181328B (de) | 1964-11-12 |
GB993314A (en) | 1965-05-26 |
US3056888A (en) | 1962-10-02 |
BE606948A (fr) | 1961-12-01 |