FR1424482A - élément de circuit électrique intégré à réactance inductive - Google Patents

élément de circuit électrique intégré à réactance inductive

Info

Publication number
FR1424482A
FR1424482A FR996940A FR996940A FR1424482A FR 1424482 A FR1424482 A FR 1424482A FR 996940 A FR996940 A FR 996940A FR 996940 A FR996940 A FR 996940A FR 1424482 A FR1424482 A FR 1424482A
Authority
FR
France
Prior art keywords
electric circuit
circuit element
inductive reactance
integrated electric
reactance integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR996940A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Priority to FR996940A priority Critical patent/FR1424482A/fr
Priority to GB50886/65A priority patent/GB1094010A/en
Priority to DEC37530A priority patent/DE1285634B/de
Priority to US510530A priority patent/US3510806A/en
Application granted granted Critical
Publication of FR1424482A publication Critical patent/FR1424482A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/46—One-port networks
    • H03H11/48—One-port networks simulating reactances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00—Continuous tuning
    • H03J3/02—Details
    • H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
    • H03J3/18—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
    • H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes
FR996940A 1964-12-01 1964-12-01 élément de circuit électrique intégré à réactance inductive Expired FR1424482A (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR996940A FR1424482A (fr) 1964-12-01 1964-12-01 élément de circuit électrique intégré à réactance inductive
GB50886/65A GB1094010A (en) 1964-12-01 1965-11-30 Improved inductive reactance circuit
DEC37530A DE1285634B (de) 1964-12-01 1965-11-30 Induktive Transistor-Blindwiderstandsschaltung
US510530A US3510806A (en) 1964-12-01 1965-11-30 Inductive reactance circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR996940A FR1424482A (fr) 1964-12-01 1964-12-01 élément de circuit électrique intégré à réactance inductive

Publications (1)

Publication Number Publication Date
FR1424482A true FR1424482A (fr) 1966-01-14

Family

ID=8843741

Family Applications (1)

Application Number Title Priority Date Filing Date
FR996940A Expired FR1424482A (fr) 1964-12-01 1964-12-01 élément de circuit électrique intégré à réactance inductive

Country Status (4)

Country Link
US (1) US3510806A (fr)
DE (1) DE1285634B (fr)
FR (1) FR1424482A (fr)
GB (1) GB1094010A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0626728A1 (fr) * 1993-05-28 1994-11-30 STMicroelectronics S.A. Circuit integré du type à résistance, capacité et transistor, procédé de fabrication d'un tel circuit intégré et application à un oscillateur

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3581123A (en) * 1969-03-27 1971-05-25 Gen Electric Circuit for providing inductive impedance
US3742261A (en) * 1971-10-06 1973-06-26 Teledyne Inc Solid state vacuum tube replacement
FR2570867B1 (fr) * 1984-09-21 1987-05-22 Thomson Csf Inductance, notamment pour circuits integres monolithiques micro-ondes
US5434536A (en) * 1987-03-23 1995-07-18 Pritchard; Eric K. Semiconductor emulation of vacuum tubes
US5256991A (en) * 1992-05-15 1993-10-26 Iowa State University Research Foundation, Inc. Broadband microwave active inductor circuit
FR2730812B1 (fr) * 1995-02-17 1997-03-14 Thomson Csf Capteur biochimique

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2929999A (en) * 1955-09-19 1960-03-22 Philco Corp Semiconductive device and apparatus
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
NL267831A (fr) * 1960-08-17
US3152309A (en) * 1960-08-23 1964-10-06 Philco Corp Simulated high-q inductor
US3160835A (en) * 1960-11-21 1964-12-08 Westinghouse Electric Corp Monolithic semiconductor circuit with energy storage junction and feedback to active transistor to produce two terminal inductance
US3289118A (en) * 1962-03-29 1966-11-29 Globe Union Inc Filter
FR1321942A (fr) * 1962-05-14 1963-03-22 Pye Ltd Circuit transformateur de réactance
US3255364A (en) * 1963-07-10 1966-06-07 Motorola Inc Three field effect transistor gyrator
US3343003A (en) * 1964-01-24 1967-09-19 Itt Transistor inductor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0626728A1 (fr) * 1993-05-28 1994-11-30 STMicroelectronics S.A. Circuit integré du type à résistance, capacité et transistor, procédé de fabrication d'un tel circuit intégré et application à un oscillateur
FR2705833A1 (fr) * 1993-05-28 1994-12-02 Sgs Thomson Microelectronics Circuit intégré du type à résistance, capacité et transistor, procédé de fabrication d'un tel circuit intégré et application à un oscillateur.
US5430319A (en) * 1993-05-28 1995-07-04 Sgs-Thomson Microelectronics, S.A. Resistor-capacitor-transistor type integrated circuit, method for the manufacture of such a circuit and application to an oscillator
US5661324A (en) * 1993-05-28 1997-08-26 Sgs-Thomson Microelectronics S.A. Relaxation oscillator using integrated RTC structure

Also Published As

Publication number Publication date
US3510806A (en) 1970-05-05
GB1094010A (en) 1967-12-06
DE1285634B (de) 1968-12-19

Similar Documents

Publication Publication Date Title
CH445668A (de) Biegsames elektrisches Widerstandselement
FR1424103A (fr) élément électrique à supraconducteurs
FR1443514A (fr) Disjoncteur électrique
FR1420864A (fr) Circuit électrique de protection
FR1374648A (fr) élément de contrat électrique
FR1424482A (fr) élément de circuit électrique intégré à réactance inductive
FR1434035A (fr) Réactance électrique
FR1491905A (fr) Bobine électrique
FR1535059A (fr) élément chauffant électrique
FR1440067A (fr) Disjoncteur électrique
FR1431180A (fr) Transformateur électrique
FR1385201A (fr) élément de contact électrique
FR1358573A (fr) Circuit électrique intégré
FR1406624A (fr) Mutateur électrique
FR1491008A (fr) élément de circuit enfichable
MC523A1 (fr) Bobine électrique
FR1442614A (fr) Disjoncteur électrique
FR1486110A (fr) élément chauffant électrique
BE613228A (fr) Elément de circuit électrique
FR1440474A (fr) Arrangement de circuit électrique
FR1483380A (fr) élément chauffant électrique
FR1406961A (fr) Transformateur électrique
FR1414845A (fr) Circuit transformateur électrique
FR1534644A (fr) Bobine électrique
FR1398940A (fr) Inductance électrique