ES319940A1 - Mejoras en transistores. - Google Patents
Mejoras en transistores.Info
- Publication number
- ES319940A1 ES319940A1 ES0319940A ES319940A ES319940A1 ES 319940 A1 ES319940 A1 ES 319940A1 ES 0319940 A ES0319940 A ES 0319940A ES 319940 A ES319940 A ES 319940A ES 319940 A1 ES319940 A1 ES 319940A1
- Authority
- ES
- Spain
- Prior art keywords
- emitter
- base
- translation
- machine
- legally binding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41301264A | 1964-11-23 | 1964-11-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES319940A1 true ES319940A1 (es) | 1966-05-01 |
Family
ID=23635426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES0319940A Expired ES319940A1 (es) | 1964-11-23 | 1965-11-23 | Mejoras en transistores. |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE672698A (es) |
| CH (1) | CH453507A (es) |
| DE (1) | DE1514062A1 (es) |
| ES (1) | ES319940A1 (es) |
| FR (1) | FR1454806A (es) |
| GB (1) | GB1132112A (es) |
| NL (1) | NL6515148A (es) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2516396C3 (de) * | 1975-04-15 | 1981-11-19 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Halbleiterbauelement mit einer Diode |
| DE3225084A1 (de) * | 1982-07-05 | 1984-01-05 | Roman Efimovič Tomilino Moskovskaja oblast' Smoljanskij | Bipolare transistortetrode |
-
1965
- 1965-11-17 GB GB4883665A patent/GB1132112A/en not_active Expired
- 1965-11-22 DE DE19651514062 patent/DE1514062A1/de active Pending
- 1965-11-22 NL NL6515148A patent/NL6515148A/xx unknown
- 1965-11-23 CH CH1609565A patent/CH453507A/de unknown
- 1965-11-23 FR FR39442A patent/FR1454806A/fr not_active Expired
- 1965-11-23 BE BE672698D patent/BE672698A/xx unknown
- 1965-11-23 ES ES0319940A patent/ES319940A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1454806A (fr) | 1966-10-07 |
| DE1514062A1 (de) | 1970-04-02 |
| CH453507A (de) | 1968-06-14 |
| NL6515148A (es) | 1966-05-24 |
| GB1132112A (en) | 1968-10-30 |
| BE672698A (es) | 1966-05-23 |
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