CH453507A - Flächentransistor - Google Patents
FlächentransistorInfo
- Publication number
- CH453507A CH453507A CH1609565A CH1609565A CH453507A CH 453507 A CH453507 A CH 453507A CH 1609565 A CH1609565 A CH 1609565A CH 1609565 A CH1609565 A CH 1609565A CH 453507 A CH453507 A CH 453507A
- Authority
- CH
- Switzerland
- Prior art keywords
- junction transistor
- junction
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41301264A | 1964-11-23 | 1964-11-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH453507A true CH453507A (de) | 1968-06-14 |
Family
ID=23635426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1609565A CH453507A (de) | 1964-11-23 | 1965-11-23 | Flächentransistor |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE672698A (de) |
| CH (1) | CH453507A (de) |
| DE (1) | DE1514062A1 (de) |
| ES (1) | ES319940A1 (de) |
| FR (1) | FR1454806A (de) |
| GB (1) | GB1132112A (de) |
| NL (1) | NL6515148A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2516396C3 (de) * | 1975-04-15 | 1981-11-19 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Halbleiterbauelement mit einer Diode |
| DE3225084A1 (de) * | 1982-07-05 | 1984-01-05 | Roman Efimovič Tomilino Moskovskaja oblast' Smoljanskij | Bipolare transistortetrode |
-
1965
- 1965-11-17 GB GB4883665A patent/GB1132112A/en not_active Expired
- 1965-11-22 DE DE19651514062 patent/DE1514062A1/de active Pending
- 1965-11-22 NL NL6515148A patent/NL6515148A/xx unknown
- 1965-11-23 BE BE672698D patent/BE672698A/xx unknown
- 1965-11-23 CH CH1609565A patent/CH453507A/de unknown
- 1965-11-23 ES ES0319940A patent/ES319940A1/es not_active Expired
- 1965-11-23 FR FR39442A patent/FR1454806A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1454806A (fr) | 1966-10-07 |
| BE672698A (de) | 1966-05-23 |
| ES319940A1 (es) | 1966-05-01 |
| DE1514062A1 (de) | 1970-04-02 |
| GB1132112A (en) | 1968-10-30 |
| NL6515148A (de) | 1966-05-24 |
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