AT303817B - Flächentransistor - Google Patents

Flächentransistor

Info

Publication number
AT303817B
AT303817B AT1213068A AT1213068A AT303817B AT 303817 B AT303817 B AT 303817B AT 1213068 A AT1213068 A AT 1213068A AT 1213068 A AT1213068 A AT 1213068A AT 303817 B AT303817 B AT 303817B
Authority
AT
Austria
Prior art keywords
junction transistor
junction
transistor
Prior art date
Application number
AT1213068A
Other languages
English (en)
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of AT303817B publication Critical patent/AT303817B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M3/00—Liquid compositions essentially based on lubricating components other than mineral lubricating oils or fatty oils and their use as lubricants; Use as lubricants of single liquid substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
AT1213068A 1967-12-13 1968-12-12 Flächentransistor AT303817B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8021467 1967-12-13

Publications (1)

Publication Number Publication Date
AT303817B true AT303817B (de) 1972-12-11

Family

ID=13712117

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1213068A AT303817B (de) 1967-12-13 1968-12-12 Flächentransistor

Country Status (6)

Country Link
US (1) US3973271A (de)
AT (1) AT303817B (de)
CH (1) CH500587A (de)
DE (1) DE1813551C3 (de)
FR (1) FR1597817A (de)
GB (1) GB1188879A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5886414A (en) * 1996-09-20 1999-03-23 Integrated Device Technology, Inc. Removal of extended bond pads using intermetallics
US5783868A (en) * 1996-09-20 1998-07-21 Integrated Device Technology, Inc. Extended bond pads with a plurality of perforations
JP3530414B2 (ja) * 1999-03-26 2004-05-24 三洋電機株式会社 半導体装置
US6414371B1 (en) * 2000-05-30 2002-07-02 International Business Machines Corporation Process and structure for 50+ gigahertz transistor
JP2008198916A (ja) * 2007-02-15 2008-08-28 Spansion Llc 半導体装置及びその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3204321A (en) * 1962-09-24 1965-09-07 Philco Corp Method of fabricating passivated mesa transistor without contamination of junctions
US3191070A (en) * 1963-01-21 1965-06-22 Fairchild Camera Instr Co Transistor agg device
US3473979A (en) * 1963-01-29 1969-10-21 Motorola Inc Semiconductor device
US3237271A (en) * 1963-08-07 1966-03-01 Bell Telephone Labor Inc Method of fabricating semiconductor devices
US3323956A (en) * 1964-03-16 1967-06-06 Hughes Aircraft Co Method of manufacturing semiconductor devices
US3290570A (en) * 1964-04-28 1966-12-06 Texas Instruments Inc Multilevel expanded metallic contacts for semiconductor devices
NL134388C (de) * 1964-05-15 1900-01-01
US3363150A (en) * 1964-05-25 1968-01-09 Gen Electric Glass encapsulated double heat sink diode assembly
USB422695I5 (de) * 1964-12-31 1900-01-01
US3287610A (en) * 1965-03-30 1966-11-22 Bendix Corp Compatible package and transistor for high frequency operation "compact"
US3457631A (en) * 1965-11-09 1969-07-29 Gen Electric Method of making a high frequency transistor structure
US3496427A (en) * 1966-01-13 1970-02-17 Gen Electric Semiconductor device with composite encapsulation
US3443173A (en) * 1966-05-17 1969-05-06 Sprague Electric Co Narrow emitter lateral transistor
US3483440A (en) * 1966-09-08 1969-12-09 Int Rectifier Corp Plastic coated semiconductor device for high-voltage low-pressure application
US3462349A (en) * 1966-09-19 1969-08-19 Hughes Aircraft Co Method of forming metal contacts on electrical components
JPS5139075B1 (de) * 1966-09-22 1976-10-26
US3431468A (en) * 1967-04-17 1969-03-04 Motorola Inc Buried integrated circuit radiation shields
US3471755A (en) * 1967-08-28 1969-10-07 Sprague Electric Co Distributed variable attenuator network

Also Published As

Publication number Publication date
FR1597817A (de) 1970-06-29
CH500587A (de) 1970-12-15
US3973271A (en) 1976-08-03
DE1813551A1 (de) 1969-07-03
DE1813551C3 (de) 1978-11-16
GB1188879A (en) 1970-04-22
DE1813551B2 (de) 1972-06-22

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee