AT303817B - Flächentransistor - Google Patents

Flächentransistor

Info

Publication number
AT303817B
AT303817B AT1213068A AT1213068A AT303817B AT 303817 B AT303817 B AT 303817B AT 1213068 A AT1213068 A AT 1213068A AT 1213068 A AT1213068 A AT 1213068A AT 303817 B AT303817 B AT 303817B
Authority
AT
Austria
Prior art keywords
junction transistor
junction
transistor
Prior art date
Application number
AT1213068A
Other languages
English (en)
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of AT303817B publication Critical patent/AT303817B/de

Links

Classifications

    • H10W20/48—
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M3/00—Liquid compositions essentially based on lubricating components other than mineral lubricating oils or fatty oils and their use as lubricants; Use as lubricants of single liquid substances
    • H10W20/40—
    • H10W20/484—
    • H10W72/90—
    • H10W72/536—
    • H10W72/5522—
    • H10W72/59—
    • H10W72/932—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
AT1213068A 1967-12-13 1968-12-12 Flächentransistor AT303817B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8021467 1967-12-13

Publications (1)

Publication Number Publication Date
AT303817B true AT303817B (de) 1972-12-11

Family

ID=13712117

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1213068A AT303817B (de) 1967-12-13 1968-12-12 Flächentransistor

Country Status (6)

Country Link
US (1) US3973271A (de)
AT (1) AT303817B (de)
CH (1) CH500587A (de)
DE (1) DE1813551C3 (de)
FR (1) FR1597817A (de)
GB (1) GB1188879A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5783868A (en) * 1996-09-20 1998-07-21 Integrated Device Technology, Inc. Extended bond pads with a plurality of perforations
US5886414A (en) * 1996-09-20 1999-03-23 Integrated Device Technology, Inc. Removal of extended bond pads using intermetallics
JP3530414B2 (ja) * 1999-03-26 2004-05-24 三洋電機株式会社 半導体装置
US6414371B1 (en) * 2000-05-30 2002-07-02 International Business Machines Corporation Process and structure for 50+ gigahertz transistor
JP2008198916A (ja) * 2007-02-15 2008-08-28 Spansion Llc 半導体装置及びその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3204321A (en) * 1962-09-24 1965-09-07 Philco Corp Method of fabricating passivated mesa transistor without contamination of junctions
US3191070A (en) * 1963-01-21 1965-06-22 Fairchild Camera Instr Co Transistor agg device
US3454846A (en) * 1963-01-29 1969-07-08 Motorola Inc High frequency transistor having a base region substrate
US3237271A (en) * 1963-08-07 1966-03-01 Bell Telephone Labor Inc Method of fabricating semiconductor devices
US3339274A (en) * 1964-03-16 1967-09-05 Hughes Aircraft Co Top contact for surface protected semiconductor devices
US3290570A (en) * 1964-04-28 1966-12-06 Texas Instruments Inc Multilevel expanded metallic contacts for semiconductor devices
NL134388C (de) * 1964-05-15 1900-01-01
US3363150A (en) * 1964-05-25 1968-01-09 Gen Electric Glass encapsulated double heat sink diode assembly
USB311264I5 (de) * 1964-12-31 1900-01-01
US3287610A (en) * 1965-03-30 1966-11-22 Bendix Corp Compatible package and transistor for high frequency operation "compact"
US3457631A (en) * 1965-11-09 1969-07-29 Gen Electric Method of making a high frequency transistor structure
US3496427A (en) * 1966-01-13 1970-02-17 Gen Electric Semiconductor device with composite encapsulation
US3443173A (en) * 1966-05-17 1969-05-06 Sprague Electric Co Narrow emitter lateral transistor
US3483440A (en) * 1966-09-08 1969-12-09 Int Rectifier Corp Plastic coated semiconductor device for high-voltage low-pressure application
US3462349A (en) * 1966-09-19 1969-08-19 Hughes Aircraft Co Method of forming metal contacts on electrical components
JPS5139075B1 (de) * 1966-09-22 1976-10-26
US3431468A (en) * 1967-04-17 1969-03-04 Motorola Inc Buried integrated circuit radiation shields
US3471755A (en) * 1967-08-28 1969-10-07 Sprague Electric Co Distributed variable attenuator network

Also Published As

Publication number Publication date
DE1813551B2 (de) 1972-06-22
CH500587A (de) 1970-12-15
GB1188879A (en) 1970-04-22
DE1813551C3 (de) 1978-11-16
FR1597817A (de) 1970-06-29
DE1813551A1 (de) 1969-07-03
US3973271A (en) 1976-08-03

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