CH429951A - Transistor - Google Patents

Transistor

Info

Publication number
CH429951A
CH429951A CH1600864A CH1600864A CH429951A CH 429951 A CH429951 A CH 429951A CH 1600864 A CH1600864 A CH 1600864A CH 1600864 A CH1600864 A CH 1600864A CH 429951 A CH429951 A CH 429951A
Authority
CH
Switzerland
Prior art keywords
transistor
Prior art date
Application number
CH1600864A
Other languages
English (en)
Inventor
Anthony Beale Julian Robert
Francis Beer Andrew
William Moulding Kenneth
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH429951A publication Critical patent/CH429951A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/038Diffusions-staged
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CH1600864A 1963-12-13 1964-12-10 Transistor CH429951A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB49355/63A GB1074287A (en) 1963-12-13 1963-12-13 Improvements in and relating to semiconductor devices
US418414A US3377526A (en) 1963-12-13 1964-12-15 Variable gain transistor structure employing base zones of various thicknesses and resistivities

Publications (1)

Publication Number Publication Date
CH429951A true CH429951A (de) 1967-02-15

Family

ID=26266465

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1600864A CH429951A (de) 1963-12-13 1964-12-10 Transistor

Country Status (5)

Country Link
US (1) US3377526A (de)
CH (1) CH429951A (de)
DE (1) DE1489192A1 (de)
GB (1) GB1074287A (de)
NL (1) NL6414232A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153497A (en) * 1966-07-25 1969-05-29 Associated Semiconductor Mft Improvements in and relating to Semiconductor Devices
US3884732A (en) * 1971-07-29 1975-05-20 Ibm Monolithic storage array and method of making
IT946150B (it) * 1971-12-15 1973-05-21 Ates Componenti Elettron Perfezionamento al processo plana re epistssiale per la produzione di circuiti integrati lineari di potenza
US4980315A (en) * 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL216979A (de) * 1956-05-18
US2910653A (en) * 1956-10-17 1959-10-27 Gen Electric Junction transistors and circuits therefor
US2869055A (en) * 1957-09-20 1959-01-13 Beckman Instruments Inc Field effect transistor
US3246172A (en) * 1963-03-26 1966-04-12 Richard J Sanford Four-layer semiconductor switch with means to provide recombination centers
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating

Also Published As

Publication number Publication date
DE1489192A1 (de) 1969-06-04
US3377526A (en) 1968-04-09
GB1074287A (en) 1967-07-05
NL6414232A (de) 1965-06-14

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