GB1334924A - Circuits including monolithic transistor structures - Google Patents

Circuits including monolithic transistor structures

Info

Publication number
GB1334924A
GB1334924A GB2047171A GB2047171A GB1334924A GB 1334924 A GB1334924 A GB 1334924A GB 2047171 A GB2047171 A GB 2047171A GB 2047171 A GB2047171 A GB 2047171A GB 1334924 A GB1334924 A GB 1334924A
Authority
GB
United Kingdom
Prior art keywords
transistor
collector
base
auxiliary
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2047171A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1334924A publication Critical patent/GB1334924A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

1334924 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 19 April 1971 [30 Jan 1970] 20471/71 Heading H1K A transistor structure comprises emitter, base and collector zones with a further, auxiliary zone, of the opposite conductivity type to the collector, diffused into the collector, the current amplification factor of the transistor in its inverse mode being reduced by application of suitable potentials to all four zones. The device may be considered as forming a main transistor and an auxiliary transistor connected base and collector of the main transistor to emitter and base of the auxiliary transistor respectively, this structure resulting in a reduction of the emitter current to base current gain (#) of the main transistor. The auxiliary zone may be located beside the base-collector junction, or in an integrated circuit as a peripheral zone adjoining or overlapping the isolation zone.
GB2047171A 1970-01-30 1971-04-19 Circuits including monolithic transistor structures Expired GB1334924A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702004090 DE2004090C3 (en) 1970-01-30 1970-01-30 Monolithically integrated transistor with reduced inverse gain factor

Publications (1)

Publication Number Publication Date
GB1334924A true GB1334924A (en) 1973-10-24

Family

ID=5760890

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2047171A Expired GB1334924A (en) 1970-01-30 1971-04-19 Circuits including monolithic transistor structures

Country Status (4)

Country Link
JP (1) JPS4935024B1 (en)
DE (1) DE2004090C3 (en)
FR (1) FR2077406B1 (en)
GB (1) GB1334924A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162370U (en) * 1980-05-06 1981-12-02
FR2525818A1 (en) * 1982-04-23 1983-10-28 Thomson Csf Saturation detection NPN transistor for logic circuit - has P=type annular zone surrounding base zone and supplementary metallisation
JPS6023303U (en) * 1983-07-25 1985-02-18 株式会社　小金井製作所 Flow rate adjustment device
JPS616078U (en) * 1984-06-15 1986-01-14 三菱電機株式会社 flow control valve
JPS62261779A (en) * 1986-05-08 1987-11-13 Matsushita Electric Ind Co Ltd Gas control device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB377311I5 (en) * 1964-06-23 1900-01-01
US3482111A (en) * 1966-03-04 1969-12-02 Ncr Co High speed logical circuit
FR1594824A (en) * 1967-12-18 1970-06-08

Also Published As

Publication number Publication date
DE2004090C3 (en) 1980-08-07
FR2077406A1 (en) 1971-10-22
DE2004090A1 (en) 1971-08-05
FR2077406B1 (en) 1973-12-28
JPS4935024B1 (en) 1974-09-19
DE2004090B2 (en) 1979-11-29

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee