USB377311I5 - - Google Patents
Info
- Publication number
- USB377311I5 USB377311I5 US377311DD USB377311I5 US B377311 I5 USB377311 I5 US B377311I5 US 377311D D US377311D D US 377311DD US B377311 I5 USB377311 I5 US B377311I5
- Authority
- US
- United States
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0772—Vertical bipolar transistor in combination with resistors only
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/031—Diffusion at an edge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/035—Diffusion through a layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US377311A US3333166A (en) | 1964-06-23 | 1964-06-23 | Semiconductor circuit complex having low isolation capacitance and method of manufacturing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| USB377311I5 true USB377311I5 (en) | 1900-01-01 |
Family
ID=23488588
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US377311D Pending USB377311I5 (en) | 1964-06-23 | ||
| US377311A Expired - Lifetime US3333166A (en) | 1964-06-23 | 1964-06-23 | Semiconductor circuit complex having low isolation capacitance and method of manufacturing same |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US377311A Expired - Lifetime US3333166A (en) | 1964-06-23 | 1964-06-23 | Semiconductor circuit complex having low isolation capacitance and method of manufacturing same |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US3333166A (en) |
| BE (1) | BE665131A (en) |
| DE (1) | DE1639549C2 (en) |
| FR (1) | FR1437276A (en) |
| GB (1) | GB1050805A (en) |
| NL (1) | NL144439B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1073551A (en) * | 1964-07-02 | 1967-06-28 | Westinghouse Electric Corp | Integrated circuit comprising a diode and method of making the same |
| US3922706A (en) * | 1965-07-31 | 1975-11-25 | Telefunken Patent | Transistor having emitter with high circumference-surface area ratio |
| US3430110A (en) * | 1965-12-02 | 1969-02-25 | Rca Corp | Monolithic integrated circuits with a plurality of isolation zones |
| US3460006A (en) * | 1966-02-28 | 1969-08-05 | Westinghouse Electric Corp | Semiconductor integrated circuits with improved isolation |
| US3483446A (en) * | 1967-06-15 | 1969-12-09 | Westinghouse Electric Corp | Semiconductor integrated circuit including a bidirectional transistor and method of making the same |
| GB1280022A (en) * | 1968-08-30 | 1972-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
| DE2004090C3 (en) * | 1970-01-30 | 1980-08-07 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithically integrated transistor with reduced inverse gain factor |
| NL7307527A (en) * | 1973-05-30 | 1974-12-03 | ||
| US3979230A (en) * | 1973-10-30 | 1976-09-07 | General Electric Company | Method of making isolation grids in bodies of semiconductor material |
| US4113512A (en) * | 1976-10-28 | 1978-09-12 | International Business Machines Corporation | Technique for preventing forward biased epi-isolation degradation |
| US6169801B1 (en) | 1998-03-16 | 2001-01-02 | Midcom, Inc. | Digital isolation apparatus and method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3150299A (en) * | 1959-09-11 | 1964-09-22 | Fairchild Camera Instr Co | Semiconductor circuit complex having isolation means |
| GB1047388A (en) * | 1962-10-05 | |||
| US3229119A (en) * | 1963-05-17 | 1966-01-11 | Sylvania Electric Prod | Transistor logic circuits |
-
0
- GB GB1050805D patent/GB1050805A/en not_active Expired
- US US377311D patent/USB377311I5/en active Pending
-
1964
- 1964-06-23 US US377311A patent/US3333166A/en not_active Expired - Lifetime
-
1965
- 1965-05-18 NL NL656506311A patent/NL144439B/en unknown
- 1965-06-09 BE BE665131A patent/BE665131A/xx unknown
- 1965-06-19 DE DE1639549A patent/DE1639549C2/en not_active Expired
- 1965-06-21 FR FR21549A patent/FR1437276A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1437276A (en) | 1966-04-29 |
| NL6506311A (en) | 1965-12-24 |
| BE665131A (en) | 1965-10-01 |
| GB1050805A (en) | 1900-01-01 |
| US3333166A (en) | 1967-07-25 |
| DE1639549C2 (en) | 1974-08-22 |
| DE1639549B1 (en) | 1970-01-29 |
| NL144439B (en) | 1974-12-16 |