FR1594824A - - Google Patents
Info
- Publication number
- FR1594824A FR1594824A FR1594824DA FR1594824A FR 1594824 A FR1594824 A FR 1594824A FR 1594824D A FR1594824D A FR 1594824DA FR 1594824 A FR1594824 A FR 1594824A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69153567A | 1967-12-18 | 1967-12-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1594824A true FR1594824A (en) | 1970-06-08 |
Family
ID=24776926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1594824D Expired FR1594824A (en) | 1967-12-18 | 1968-11-12 |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR1594824A (en) |
GB (1) | GB1173880A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2004090C3 (en) * | 1970-01-30 | 1980-08-07 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithically integrated transistor with reduced inverse gain factor |
DE2021824C3 (en) * | 1970-05-05 | 1980-08-14 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithic semiconductor circuit |
DE2214018B2 (en) * | 1972-03-23 | 1974-03-14 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithically integrated solid-state circuit used as a two-pole with Zener diode characteristics |
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1968
- 1968-11-12 FR FR1594824D patent/FR1594824A/fr not_active Expired
- 1968-11-19 GB GB5481268A patent/GB1173880A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1809687B2 (en) | 1971-09-30 |
GB1173880A (en) | 1969-12-10 |
DE1809687A1 (en) | 1970-02-26 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |