FR2077406A1 - - Google Patents

Info

Publication number
FR2077406A1
FR2077406A1 FR7045292A FR7045292A FR2077406A1 FR 2077406 A1 FR2077406 A1 FR 2077406A1 FR 7045292 A FR7045292 A FR 7045292A FR 7045292 A FR7045292 A FR 7045292A FR 2077406 A1 FR2077406 A1 FR 2077406A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7045292A
Other languages
French (fr)
Other versions
FR2077406B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2077406A1 publication Critical patent/FR2077406A1/fr
Application granted granted Critical
Publication of FR2077406B1 publication Critical patent/FR2077406B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
FR7045292A 1970-01-30 1970-12-08 Expired FR2077406B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702004090 DE2004090C3 (en) 1970-01-30 1970-01-30 Monolithically integrated transistor with reduced inverse gain factor

Publications (2)

Publication Number Publication Date
FR2077406A1 true FR2077406A1 (en) 1971-10-22
FR2077406B1 FR2077406B1 (en) 1973-12-28

Family

ID=5760890

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7045292A Expired FR2077406B1 (en) 1970-01-30 1970-12-08

Country Status (4)

Country Link
JP (1) JPS4935024B1 (en)
DE (1) DE2004090C3 (en)
FR (1) FR2077406B1 (en)
GB (1) GB1334924A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2525818A1 (en) * 1982-04-23 1983-10-28 Thomson Csf Saturation detection NPN transistor for logic circuit - has P=type annular zone surrounding base zone and supplementary metallisation

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162370U (en) * 1980-05-06 1981-12-02
JPS6023303U (en) * 1983-07-25 1985-02-18 株式会社　小金井製作所 Flow rate adjustment device
JPS616078U (en) * 1984-06-15 1986-01-14 三菱電機株式会社 flow control valve
JPS62261779A (en) * 1986-05-08 1987-11-13 Matsushita Electric Ind Co Ltd Gas control device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3333166A (en) * 1964-06-23 1967-07-25 Ncr Co Semiconductor circuit complex having low isolation capacitance and method of manufacturing same
CH455878A (en) * 1966-03-04 1968-05-15 Ncr Co Logic circuit device
GB1173880A (en) * 1967-12-18 1969-12-10 Ibm Semiconductor Devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3333166A (en) * 1964-06-23 1967-07-25 Ncr Co Semiconductor circuit complex having low isolation capacitance and method of manufacturing same
CH455878A (en) * 1966-03-04 1968-05-15 Ncr Co Logic circuit device
GB1173880A (en) * 1967-12-18 1969-12-10 Ibm Semiconductor Devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2525818A1 (en) * 1982-04-23 1983-10-28 Thomson Csf Saturation detection NPN transistor for logic circuit - has P=type annular zone surrounding base zone and supplementary metallisation

Also Published As

Publication number Publication date
FR2077406B1 (en) 1973-12-28
GB1334924A (en) 1973-10-24
DE2004090B2 (en) 1979-11-29
DE2004090C3 (en) 1980-08-07
JPS4935024B1 (en) 1974-09-19
DE2004090A1 (en) 1971-08-05

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Legal Events

Date Code Title Description
ST Notification of lapse