NL154362B - Werkwijze om een halfgeleiderinrichting, met een isolerende laag die een siliciumnitride bevat, te vervaardigen. - Google Patents

Werkwijze om een halfgeleiderinrichting, met een isolerende laag die een siliciumnitride bevat, te vervaardigen.

Info

Publication number
NL154362B
NL154362B NL676708560A NL6708560A NL154362B NL 154362 B NL154362 B NL 154362B NL 676708560 A NL676708560 A NL 676708560A NL 6708560 A NL6708560 A NL 6708560A NL 154362 B NL154362 B NL 154362B
Authority
NL
Netherlands
Prior art keywords
procedure
manufacturing
semiconductor device
insulating layer
silicon nitride
Prior art date
Application number
NL676708560A
Other languages
English (en)
Other versions
NL6708560A (nl
Original Assignee
Sperry Rand Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sperry Rand Corp filed Critical Sperry Rand Corp
Publication of NL6708560A publication Critical patent/NL6708560A/xx
Publication of NL154362B publication Critical patent/NL154362B/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
NL676708560A 1966-06-20 1967-06-20 Werkwijze om een halfgeleiderinrichting, met een isolerende laag die een siliciumnitride bevat, te vervaardigen. NL154362B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55880366A 1966-06-20 1966-06-20

Publications (2)

Publication Number Publication Date
NL6708560A NL6708560A (nl) 1967-12-21
NL154362B true NL154362B (nl) 1977-08-15

Family

ID=24231046

Family Applications (1)

Application Number Title Priority Date Filing Date
NL676708560A NL154362B (nl) 1966-06-20 1967-06-20 Werkwijze om een halfgeleiderinrichting, met een isolerende laag die een siliciumnitride bevat, te vervaardigen.

Country Status (5)

Country Link
US (1) US3422321A (nl)
DE (1) DE1614540C3 (nl)
GB (1) GB1130138A (nl)
NL (1) NL154362B (nl)
SE (1) SE318653B (nl)

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DE1696625C3 (de) * 1966-10-07 1979-03-08 Syumpei, Yamazaki Verfahren zum Erzeugen einer Nitridschutzschicht auf einem Halbleiterkörper
US3520722A (en) * 1967-05-10 1970-07-14 Rca Corp Fabrication of semiconductive devices with silicon nitride coatings
US3508211A (en) * 1967-06-23 1970-04-21 Sperry Rand Corp Electrically alterable non-destructive readout field effect transistor memory
US3698071A (en) * 1968-02-19 1972-10-17 Texas Instruments Inc Method and device employing high resistivity aluminum oxide film
US3629088A (en) * 1968-07-11 1971-12-21 Sperry Rand Corp Sputtering method for deposition of silicon oxynitride
US3652324A (en) * 1968-08-15 1972-03-28 Westinghouse Electric Corp A METHOD OF VAPOR DEPOSITING A LAYER OF Si{11 N{11 {0 ON A SILICON BASE
US3590337A (en) * 1968-10-14 1971-06-29 Sperry Rand Corp Plural dielectric layered electrically alterable non-destructive readout memory element
US4058887A (en) * 1971-02-19 1977-11-22 Ibm Corporation Method for forming a transistor comprising layers of silicon dioxide and silicon nitride
US3707656A (en) * 1971-02-19 1972-12-26 Ibm Transistor comprising layers of silicon dioxide and silicon nitride
US3765935A (en) * 1971-08-10 1973-10-16 Bell Telephone Labor Inc Radiation resistant coatings for semiconductor devices
US4004046A (en) * 1972-03-30 1977-01-18 Motorola, Inc. Method of fabricating thin monocrystalline semiconductive layer on an insulating substrate
US3829886A (en) * 1973-05-21 1974-08-13 Sperry Rand Corp Bistable semiconductor temperature sensor
JPS5193874A (en) * 1975-02-15 1976-08-17 Handotaisochino seizohoho
US4097889A (en) * 1976-11-01 1978-06-27 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
US4091406A (en) * 1976-11-01 1978-05-23 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
US4091407A (en) * 1976-11-01 1978-05-23 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
JPS5559729A (en) * 1978-10-27 1980-05-06 Fujitsu Ltd Forming method of semiconductor surface insulating film
US4250206A (en) * 1978-12-11 1981-02-10 Texas Instruments Incorporated Method of making non-volatile semiconductor memory elements
EP0024305B1 (de) * 1979-08-16 1985-05-02 International Business Machines Corporation Verfahren zum Aufbringen von SiO2-Filmen mittels chemischen Niederschlagens aus der Dampfphase
JPS5693344A (en) * 1979-12-26 1981-07-28 Fujitsu Ltd Manufacture of semiconductor device
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
US4613556A (en) * 1984-10-18 1986-09-23 Xerox Corporation Heterogeneous electrophotographic imaging members of amorphous silicon and silicon oxide
US4948662A (en) * 1985-03-14 1990-08-14 The Boeing Company Boron nitride coated ceramic fibers and coating method
US4605588A (en) * 1985-03-14 1986-08-12 The Boeing Company Barrier coated ceramic fiber and coating method
US5397720A (en) * 1994-01-07 1995-03-14 The Regents Of The University Of Texas System Method of making MOS transistor having improved oxynitride dielectric
US5478765A (en) * 1994-05-04 1995-12-26 Regents Of The University Of Texas System Method of making an ultra thin dielectric for electronic devices
JP3273582B2 (ja) 1994-05-13 2002-04-08 キヤノン株式会社 記憶装置
US5541141A (en) * 1995-02-27 1996-07-30 Hyundai Electronics Industries Co., Ltd. Method for forming an oxynitride film in a semiconductor device
US5710067A (en) * 1995-06-07 1998-01-20 Advanced Micro Devices, Inc. Silicon oxime film
US6022799A (en) * 1995-06-07 2000-02-08 Advanced Micro Devices, Inc. Methods for making a semiconductor device with improved hot carrier lifetime
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
FR2801426B1 (fr) * 1999-11-18 2002-10-11 St Microelectronics Sa Capacite integree a dielectrique mixte
CN102362355A (zh) * 2009-03-25 2012-02-22 陶氏环球技术有限责任公司 在薄膜光伏制品上形成保护层的方法和用这样的层制成的制品

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US3165430A (en) * 1963-01-21 1965-01-12 Siliconix Inc Method of ultra-fine semiconductor manufacture
US3246214A (en) * 1963-04-22 1966-04-12 Siliconix Inc Horizontally aligned junction transistor structure
GB1060925A (en) * 1964-04-27 1967-03-08 Westinghouse Electric Corp Growth of insulating films such as for semiconductor devices
US3312879A (en) * 1964-07-29 1967-04-04 North American Aviation Inc Semiconductor structure including opposite conductivity segments
US3287243A (en) * 1965-03-29 1966-11-22 Bell Telephone Labor Inc Deposition of insulating films by cathode sputtering in an rf-supported discharge

Also Published As

Publication number Publication date
US3422321A (en) 1969-01-14
GB1130138A (en) 1968-10-09
SE318653B (nl) 1969-12-15
DE1614540C3 (de) 1979-09-13
DE1614540A1 (de) 1970-07-02
NL6708560A (nl) 1967-12-21
DE1614540B2 (de) 1977-12-22

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Legal Events

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NL80 Information provided on patent owner name for an already discontinued patent

Owner name: SPERRY