SE374467B - - Google Patents

Info

Publication number
SE374467B
SE374467B SE7105309A SE530971A SE374467B SE 374467 B SE374467 B SE 374467B SE 7105309 A SE7105309 A SE 7105309A SE 530971 A SE530971 A SE 530971A SE 374467 B SE374467 B SE 374467B
Authority
SE
Sweden
Application number
SE7105309A
Inventor
I Hayashi
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE374467B publication Critical patent/SE374467B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
SE7105309A 1970-05-01 1971-04-23 SE374467B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3370570A 1970-05-01 1970-05-01

Publications (1)

Publication Number Publication Date
SE374467B true SE374467B (es) 1975-03-03

Family

ID=21871982

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7105309A SE374467B (es) 1970-05-01 1971-04-23

Country Status (6)

Country Link
JP (2) JPS541153B1 (es)
KR (1) KR780000083B1 (es)
CA (1) CA977448A (es)
ES (1) ES391099A1 (es)
IE (1) IE35169B1 (es)
SE (1) SE374467B (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH084151B2 (ja) * 1988-03-04 1996-01-17 三菱化学株式会社 エピタキシャル・ウエハ

Also Published As

Publication number Publication date
IE35169B1 (en) 1975-11-26
ES391099A1 (es) 1974-11-16
IE35169L (en) 1971-11-01
CA977448A (en) 1975-11-04
JPS5456387A (en) 1979-05-07
JPS541153B1 (es) 1979-01-20
KR780000083B1 (en) 1978-03-30
JPS5544471B2 (es) 1980-11-12

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