AT376844B - Halbleiterbauteil - Google Patents

Halbleiterbauteil

Info

Publication number
AT376844B
AT376844B AT1083973A AT1083973A AT376844B AT 376844 B AT376844 B AT 376844B AT 1083973 A AT1083973 A AT 1083973A AT 1083973 A AT1083973 A AT 1083973A AT 376844 B AT376844 B AT 376844B
Authority
AT
Austria
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Application number
AT1083973A
Other languages
German (de)
English (en)
Other versions
ATA1083973A (de
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of ATA1083973A publication Critical patent/ATA1083973A/de
Application granted granted Critical
Publication of AT376844B publication Critical patent/AT376844B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
AT1083973A 1972-12-29 1973-12-27 Halbleiterbauteil AT376844B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48000550A JPS5147583B2 (it) 1972-12-29 1972-12-29

Publications (2)

Publication Number Publication Date
ATA1083973A ATA1083973A (de) 1984-05-15
AT376844B true AT376844B (de) 1985-01-10

Family

ID=11476818

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1083973A AT376844B (de) 1972-12-29 1973-12-27 Halbleiterbauteil

Country Status (15)

Country Link
JP (1) JPS5147583B2 (it)
AT (1) AT376844B (it)
BE (1) BE809216A (it)
BR (1) BR7310275D0 (it)
CA (1) CA993568A (it)
CH (1) CH577750A5 (it)
DE (1) DE2364752A1 (it)
DK (1) DK140036C (it)
ES (1) ES421881A1 (it)
FR (1) FR2212645B1 (it)
GB (1) GB1460037A (it)
IT (1) IT1002384B (it)
NL (1) NL7317815A (it)
NO (1) NO140844C (it)
SE (1) SE398940B (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914897B2 (ja) * 1975-02-08 1984-04-06 ソニー株式会社 半導体装置
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5754969B2 (it) * 1974-04-04 1982-11-20
JPS5753672B2 (it) * 1974-04-10 1982-11-13
JPS57658B2 (it) * 1974-04-16 1982-01-07
JPS5714064B2 (it) * 1974-04-25 1982-03-20
JPS5718710B2 (it) * 1974-05-10 1982-04-17
JPS5648983B2 (it) * 1974-05-10 1981-11-19
JPS5426789Y2 (it) * 1974-07-23 1979-09-03
IT1061510B (it) * 1975-06-30 1983-04-30 Rca Corp Transistore bipolare presentante un emettitore con una elevata bassa concentrazione di impurezze e metodo di fabbricazione dello stesso
JPS52100978A (en) * 1976-02-20 1977-08-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS5565460A (en) * 1978-11-09 1980-05-16 Ibm Method of manufacturing semiconductor device improved in current gain
JPS5946103B2 (ja) * 1980-03-10 1984-11-10 日本電信電話株式会社 トランジスタ

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2822310A (en) * 1955-04-21 1958-02-04 Philips Corp Semi-conductor device
DE1221363B (de) * 1964-04-25 1966-07-21 Telefunken Patent Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen
DE1278023B (de) * 1964-02-20 1968-09-19 Westinghouse Electric Corp Halbleiterschaltelement und Verfahren zu seiner Herstellung
DE1297237B (de) * 1964-09-18 1969-06-12 Itt Ind Gmbh Deutsche Flaechentransistor und Verfahren zu seiner Herstellung
GB1160429A (en) * 1965-10-14 1969-08-06 Philco Ford Corp Improvements in and relating to Semiconductive Devices.
US3469117A (en) * 1966-01-08 1969-09-23 Nippon Telegraph & Telephone Electric circuit employing semiconductor devices
DE1917013A1 (de) * 1968-04-11 1969-10-23 Westinghouse Electric Corp Halbleitervierschichttriode
CH484519A (de) * 1967-08-11 1970-01-15 Westinghouse Electric Corp Steuerbares Halbleiterbauelement
US3500141A (en) * 1964-10-13 1970-03-10 Ibm Transistor structure
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
DE1614383A1 (de) * 1966-12-01 1970-05-27 Rca Corp Halbleiterbauelement und Verfahren zu seiner Herstellung
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
DE2048737A1 (de) * 1969-11-10 1971-05-13 Ibm Verfahren zur Herstellung integrierter Transistoren
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
DE1764765A1 (de) * 1967-08-03 1971-07-08 Rca Corp Halbleiter-Bauelement
DE2014173B2 (de) * 1969-03-28 1972-04-06 Hitachi, Ltd , Tokio Verfahren zum herstellen einer vielzahl von halbleiteranordnungen, insbesondere leistungstransistoren
DE2060854A1 (de) * 1970-12-10 1972-08-17 Siemens Ag Halbleiterbauelement mit drei Zonen abwechselnden Leitfaehigkeitstyps und Anordnung zu seiner Ansteuerung
FR2130399A1 (it) * 1971-03-20 1972-11-03 Philips Nv
DE2320563A1 (de) * 1972-04-20 1973-10-25 Sony Corp Vierschichttriode

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2822310A (en) * 1955-04-21 1958-02-04 Philips Corp Semi-conductor device
DE1278023B (de) * 1964-02-20 1968-09-19 Westinghouse Electric Corp Halbleiterschaltelement und Verfahren zu seiner Herstellung
DE1221363B (de) * 1964-04-25 1966-07-21 Telefunken Patent Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen
DE1297237B (de) * 1964-09-18 1969-06-12 Itt Ind Gmbh Deutsche Flaechentransistor und Verfahren zu seiner Herstellung
US3500141A (en) * 1964-10-13 1970-03-10 Ibm Transistor structure
GB1160429A (en) * 1965-10-14 1969-08-06 Philco Ford Corp Improvements in and relating to Semiconductive Devices.
DE1564509A1 (de) * 1965-10-14 1970-03-05 Philco Ford Corp Transistor
US3469117A (en) * 1966-01-08 1969-09-23 Nippon Telegraph & Telephone Electric circuit employing semiconductor devices
DE1614383A1 (de) * 1966-12-01 1970-05-27 Rca Corp Halbleiterbauelement und Verfahren zu seiner Herstellung
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
DE1764765A1 (de) * 1967-08-03 1971-07-08 Rca Corp Halbleiter-Bauelement
CH484519A (de) * 1967-08-11 1970-01-15 Westinghouse Electric Corp Steuerbares Halbleiterbauelement
DE1917013A1 (de) * 1968-04-11 1969-10-23 Westinghouse Electric Corp Halbleitervierschichttriode
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
DE2014173B2 (de) * 1969-03-28 1972-04-06 Hitachi, Ltd , Tokio Verfahren zum herstellen einer vielzahl von halbleiteranordnungen, insbesondere leistungstransistoren
DE2048737A1 (de) * 1969-11-10 1971-05-13 Ibm Verfahren zur Herstellung integrierter Transistoren
DE2060854A1 (de) * 1970-12-10 1972-08-17 Siemens Ag Halbleiterbauelement mit drei Zonen abwechselnden Leitfaehigkeitstyps und Anordnung zu seiner Ansteuerung
FR2130399A1 (it) * 1971-03-20 1972-11-03 Philips Nv
DE2320563A1 (de) * 1972-04-20 1973-10-25 Sony Corp Vierschichttriode

Also Published As

Publication number Publication date
NO140844B (no) 1979-08-13
SE398940B (sv) 1978-01-23
NO140844C (no) 1979-11-21
JPS5147583B2 (it) 1976-12-15
DK140036C (da) 1979-12-24
JPS4991191A (it) 1974-08-30
NL7317815A (it) 1974-07-02
BE809216A (fr) 1974-04-16
FR2212645A1 (it) 1974-07-26
FR2212645B1 (it) 1977-08-05
CA993568A (en) 1976-07-20
DK140036B (da) 1979-06-05
ATA1083973A (de) 1984-05-15
BR7310275D0 (pt) 1974-09-24
IT1002384B (it) 1976-05-20
AU6378973A (en) 1975-06-19
DE2364752A1 (de) 1974-08-01
GB1460037A (en) 1976-12-31
CH577750A5 (it) 1976-07-15
ES421881A1 (es) 1976-08-01

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