GB1496306A - Semiconductor integrated circuit including an epitaxial base type vertical transistor - Google Patents
Semiconductor integrated circuit including an epitaxial base type vertical transistorInfo
- Publication number
- GB1496306A GB1496306A GB1630176A GB1630176A GB1496306A GB 1496306 A GB1496306 A GB 1496306A GB 1630176 A GB1630176 A GB 1630176A GB 1630176 A GB1630176 A GB 1630176A GB 1496306 A GB1496306 A GB 1496306A
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- integrated circuit
- vertical transistor
- semiconductor integrated
- circuit including
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50048189A JPS51123577A (en) | 1975-04-22 | 1975-04-22 | Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1496306A true GB1496306A (en) | 1977-12-30 |
Family
ID=12796429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1630176A Expired GB1496306A (en) | 1975-04-22 | 1976-04-22 | Semiconductor integrated circuit including an epitaxial base type vertical transistor |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS51123577A (fr) |
| DE (1) | DE2617521A1 (fr) |
| FR (1) | FR2309040A1 (fr) |
| GB (1) | GB1496306A (fr) |
| IT (1) | IT1058177B (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1101096B (it) * | 1978-12-22 | 1985-09-28 | Ates Componenti Elettron | Perfezionamento al procedimento per produrre dispositivi integrati a semiconduttore e prodotto risultante |
| JPS5917409A (ja) * | 1982-07-21 | 1984-01-28 | Nissan Motor Co Ltd | 搬送用ハンガ− |
| JPS6377144A (ja) * | 1986-09-19 | 1988-04-07 | Sanyo Electric Co Ltd | 半導体集積回路 |
| JP2835116B2 (ja) * | 1989-09-29 | 1998-12-14 | 株式会社東芝 | 電力用ｉｃおよびその製造方法 |
| JP3653963B2 (ja) * | 1997-12-25 | 2005-06-02 | ソニー株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4841675A (fr) * | 1971-09-28 | 1973-06-18 | ||
| JPS4842685A (fr) * | 1971-09-30 | 1973-06-21 | ||
| JPS5942463B2 (ja) * | 1972-09-22 | 1984-10-15 | ソニー株式会社 | 半導体集積回路装置 |
-
1975
- 1975-04-22 JP JP50048189A patent/JPS51123577A/ja active Pending
-
1976
- 1976-04-21 IT IT4911076A patent/IT1058177B/it active
- 1976-04-22 GB GB1630176A patent/GB1496306A/en not_active Expired
- 1976-04-22 FR FR7611931A patent/FR2309040A1/fr active Granted
- 1976-04-22 DE DE19762617521 patent/DE2617521A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| FR2309040A1 (fr) | 1976-11-19 |
| IT1058177B (it) | 1982-04-10 |
| DE2617521A1 (de) | 1976-11-04 |
| FR2309040B1 (fr) | 1979-01-12 |
| JPS51123577A (en) | 1976-10-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19960421 |