CH473475A - Procédé de fabrication de diodes - Google Patents
Procédé de fabrication de diodesInfo
- Publication number
- CH473475A CH473475A CH514268A CH514268A CH473475A CH 473475 A CH473475 A CH 473475A CH 514268 A CH514268 A CH 514268A CH 514268 A CH514268 A CH 514268A CH 473475 A CH473475 A CH 473475A
- Authority
- CH
- Switzerland
- Prior art keywords
- diodes
- manufacturing process
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/326—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/979—Tunnel diodes
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR103229A FR1527116A (fr) | 1967-04-18 | 1967-04-18 | Procédé de fabrication des diodes par impulsions électriques |
Publications (1)
Publication Number | Publication Date |
---|---|
CH473475A true CH473475A (fr) | 1969-05-31 |
Family
ID=8629127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH514268A CH473475A (fr) | 1967-04-18 | 1968-04-05 | Procédé de fabrication de diodes |
Country Status (9)
Country | Link |
---|---|
US (1) | US3537920A (fr) |
BE (1) | BE713225A (fr) |
CH (1) | CH473475A (fr) |
DE (1) | DE1764178A1 (fr) |
FR (1) | FR1527116A (fr) |
GB (1) | GB1196515A (fr) |
LU (1) | LU55852A1 (fr) |
NL (1) | NL6804408A (fr) |
SE (1) | SE350153B (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1800212A1 (de) * | 1968-10-01 | 1970-05-06 | Telefunken Patent | Verfahren zum Herstellen einer Halbleiteranordnung |
US4081794A (en) * | 1976-04-02 | 1978-03-28 | General Electric Company | Alloy junction archival memory plane and methods for writing data thereon |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3156592A (en) * | 1959-04-20 | 1964-11-10 | Sprague Electric Co | Microalloying method for semiconductive device |
US3291658A (en) * | 1963-06-28 | 1966-12-13 | Ibm | Process of making tunnel diodes that results in a peak current that is maintained over a long period of time |
-
1967
- 1967-04-18 FR FR103229A patent/FR1527116A/fr not_active Expired
-
1968
- 1968-03-15 GB GB12746/68A patent/GB1196515A/en not_active Expired
- 1968-03-29 NL NL6804408A patent/NL6804408A/xx unknown
- 1968-04-04 BE BE713225D patent/BE713225A/xx unknown
- 1968-04-05 CH CH514268A patent/CH473475A/fr not_active IP Right Cessation
- 1968-04-05 US US719024A patent/US3537920A/en not_active Expired - Lifetime
- 1968-04-08 LU LU55852D patent/LU55852A1/xx unknown
- 1968-04-17 SE SE05147/68A patent/SE350153B/xx unknown
- 1968-04-18 DE DE19681764178 patent/DE1764178A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
SE350153B (fr) | 1972-10-16 |
LU55852A1 (fr) | 1969-11-13 |
NL6804408A (fr) | 1968-10-21 |
BE713225A (fr) | 1968-10-04 |
DE1764178A1 (de) | 1971-06-09 |
GB1196515A (en) | 1970-06-24 |
US3537920A (en) | 1970-11-03 |
FR1527116A (fr) | 1968-05-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |