CH473475A - Procédé de fabrication de diodes - Google Patents

Procédé de fabrication de diodes

Info

Publication number
CH473475A
CH473475A CH514268A CH514268A CH473475A CH 473475 A CH473475 A CH 473475A CH 514268 A CH514268 A CH 514268A CH 514268 A CH514268 A CH 514268A CH 473475 A CH473475 A CH 473475A
Authority
CH
Switzerland
Prior art keywords
diodes
manufacturing process
manufacturing
Prior art date
Application number
CH514268A
Other languages
English (en)
Inventor
Carpentier Jacques Le
Original Assignee
Cit Alcatel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cit Alcatel filed Critical Cit Alcatel
Publication of CH473475A publication Critical patent/CH473475A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326Application of electric currents or fields, e.g. for electroforming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/979Tunnel diodes
CH514268A 1967-04-18 1968-04-05 Procédé de fabrication de diodes CH473475A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR103229A FR1527116A (fr) 1967-04-18 1967-04-18 Procédé de fabrication des diodes par impulsions électriques

Publications (1)

Publication Number Publication Date
CH473475A true CH473475A (fr) 1969-05-31

Family

ID=8629127

Family Applications (1)

Application Number Title Priority Date Filing Date
CH514268A CH473475A (fr) 1967-04-18 1968-04-05 Procédé de fabrication de diodes

Country Status (9)

Country Link
US (1) US3537920A (fr)
BE (1) BE713225A (fr)
CH (1) CH473475A (fr)
DE (1) DE1764178A1 (fr)
FR (1) FR1527116A (fr)
GB (1) GB1196515A (fr)
LU (1) LU55852A1 (fr)
NL (1) NL6804408A (fr)
SE (1) SE350153B (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1800212A1 (de) * 1968-10-01 1970-05-06 Telefunken Patent Verfahren zum Herstellen einer Halbleiteranordnung
US4081794A (en) * 1976-04-02 1978-03-28 General Electric Company Alloy junction archival memory plane and methods for writing data thereon

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3156592A (en) * 1959-04-20 1964-11-10 Sprague Electric Co Microalloying method for semiconductive device
US3291658A (en) * 1963-06-28 1966-12-13 Ibm Process of making tunnel diodes that results in a peak current that is maintained over a long period of time

Also Published As

Publication number Publication date
SE350153B (fr) 1972-10-16
LU55852A1 (fr) 1969-11-13
NL6804408A (fr) 1968-10-21
BE713225A (fr) 1968-10-04
DE1764178A1 (de) 1971-06-09
GB1196515A (en) 1970-06-24
US3537920A (en) 1970-11-03
FR1527116A (fr) 1968-05-31

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Legal Events

Date Code Title Description
PL Patent ceased