GB2114365B - Process for forming a doped oxide film and composite article - Google Patents

Process for forming a doped oxide film and composite article

Info

Publication number
GB2114365B
GB2114365B GB08234629A GB8234629A GB2114365B GB 2114365 B GB2114365 B GB 2114365B GB 08234629 A GB08234629 A GB 08234629A GB 8234629 A GB8234629 A GB 8234629A GB 2114365 B GB2114365 B GB 2114365B
Authority
GB
United Kingdom
Prior art keywords
forming
oxide film
composite article
doped oxide
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08234629A
Other versions
GB2114365A (en
Inventor
Ian Melville Thomas
James Joseph Tillman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OI Glass Inc
Original Assignee
Owens Illinois Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Owens Illinois Inc filed Critical Owens Illinois Inc
Publication of GB2114365A publication Critical patent/GB2114365A/en
Application granted granted Critical
Publication of GB2114365B publication Critical patent/GB2114365B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Polymers (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
GB08234629A 1982-01-28 1982-12-03 Process for forming a doped oxide film and composite article Expired GB2114365B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US34366782A 1982-01-28 1982-01-28

Publications (2)

Publication Number Publication Date
GB2114365A GB2114365A (en) 1983-08-17
GB2114365B true GB2114365B (en) 1986-08-06

Family

ID=23347085

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08234629A Expired GB2114365B (en) 1982-01-28 1982-12-03 Process for forming a doped oxide film and composite article

Country Status (4)

Country Link
JP (1) JPS58131730A (en)
DE (1) DE3247173C2 (en)
FR (1) FR2520554B1 (en)
GB (1) GB2114365B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105518828A (en) * 2013-08-30 2016-04-20 日立化成株式会社 Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, method for producing semiconductor substrate with n-type diffusion layer, and method for manufacturing solar cell element

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4571366A (en) * 1982-02-11 1986-02-18 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
EP0165507A3 (en) * 1984-06-18 1987-12-02 Allied Corporation Phosphoric triamides and polymers thereof as dopants
JPS6366929A (en) * 1986-09-08 1988-03-25 Tokyo Ohka Kogyo Co Ltd Silica group film forming composition for diffusing antimony
DE3704518A1 (en) 1987-02-13 1988-08-25 Hoechst Ag COATING SOLUTION AND METHOD FOR PRODUCING GLASS-LIKE LAYERS
JP2004538231A (en) * 2001-08-10 2004-12-24 エバーグリーン ソーラー， インコーポレイテッド Method and apparatus for doping semiconductors
JP5666254B2 (en) * 2010-11-11 2015-02-12 東京応化工業株式会社 Diffusion agent composition and method for forming impurity diffusion layer
JP2013026524A (en) * 2011-07-22 2013-02-04 Hitachi Chem Co Ltd N-type diffusion layer forming composition, manufacturing method of n-type diffusion layer, manufacturing method of solar cell element, and solar cell
JP6139155B2 (en) * 2012-05-07 2017-05-31 東京応化工業株式会社 Diffusion agent composition and method for forming impurity diffusion layer
US9076719B2 (en) * 2013-08-21 2015-07-07 The Regents Of The University Of California Doping of a substrate via a dopant containing polymer film
JP2015213177A (en) * 2015-06-15 2015-11-26 日立化成株式会社 N-type diffusion layer forming composition, manufacturing method of n-type diffusion layer, manufacturing method of solar cell element, and solar cell

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
FR2123652A5 (en) * 1970-02-19 1972-09-15 Ibm
US3837873A (en) * 1972-05-31 1974-09-24 Texas Instruments Inc Compositions for use in forming a doped oxide film
US3789023A (en) * 1972-08-09 1974-01-29 Motorola Inc Liquid diffusion dopant source for semiconductors
JPS53135263A (en) * 1977-04-28 1978-11-25 Nec Corp Production of semiconductor device
US4152286A (en) * 1977-09-13 1979-05-01 Texas Instruments Incorporated Composition and method for forming a doped oxide film
US4243427A (en) * 1977-11-21 1981-01-06 Trw Inc. High concentration phosphoro-silica spin-on dopant
DE2952116A1 (en) * 1979-12-22 1981-07-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Liquid dopant for high phosphorus doping of silicon semiconductor - contains ethyl orthosilicate, solvent and aq. phosphoric acid, esp. for spin-on coating

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105518828A (en) * 2013-08-30 2016-04-20 日立化成株式会社 Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, method for producing semiconductor substrate with n-type diffusion layer, and method for manufacturing solar cell element

Also Published As

Publication number Publication date
DE3247173C2 (en) 1986-10-30
FR2520554B1 (en) 1987-02-27
JPS58131730A (en) 1983-08-05
GB2114365A (en) 1983-08-17
DE3247173A1 (en) 1983-08-04
FR2520554A1 (en) 1983-07-29

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee