FR1365283A - Fabrication de dispositifs semiconducteurs - Google Patents

Fabrication de dispositifs semiconducteurs

Info

Publication number
FR1365283A
FR1365283A FR911112A FR911112A FR1365283A FR 1365283 A FR1365283 A FR 1365283A FR 911112 A FR911112 A FR 911112A FR 911112 A FR911112 A FR 911112A FR 1365283 A FR1365283 A FR 1365283A
Authority
FR
France
Prior art keywords
semiconductor device
device manufacturing
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR911112A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1365283A publication Critical patent/FR1365283A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
FR911112A 1961-10-06 1962-10-03 Fabrication de dispositifs semiconducteurs Expired FR1365283A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US143322A US3171761A (en) 1961-10-06 1961-10-06 Particular masking configuration in a vapor deposition process

Publications (1)

Publication Number Publication Date
FR1365283A true FR1365283A (fr) 1964-07-03

Family

ID=22503562

Family Applications (1)

Application Number Title Priority Date Filing Date
FR911112A Expired FR1365283A (fr) 1961-10-06 1962-10-03 Fabrication de dispositifs semiconducteurs

Country Status (5)

Country Link
US (1) US3171761A (fr)
DE (1) DE1178518C2 (fr)
FR (1) FR1365283A (fr)
GB (1) GB989890A (fr)
NL (1) NL283619A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3237062A (en) * 1961-10-20 1966-02-22 Westinghouse Electric Corp Monolithic semiconductor devices
GB1001908A (en) * 1962-08-31 1965-08-18 Texas Instruments Inc Semiconductor devices
FR1413980A (fr) * 1963-09-12 1965-10-15 Litton Industries Inc Procédé de fabrication d'éléments à circuit incorporé isolés
US3461003A (en) * 1964-12-14 1969-08-12 Motorola Inc Method of fabricating a semiconductor structure with an electrically isolated region of semiconductor material
DE1286511B (de) * 1964-12-19 1969-01-09 Telefunken Patent Verfahren zum Herstellen eines Halbleiterkoerpers mit einem niederohmigen Substrat
DE1250514B (fr) * 1965-06-28 1900-01-01
US3460240A (en) * 1965-08-24 1969-08-12 Westinghouse Electric Corp Manufacture of semiconductor solar cells
DE1639581B1 (de) * 1965-10-06 1970-01-15 Telefunken Patent Verfahren zum Herstellen einer Halbleiteranordnung
DE2151346C3 (de) * 1971-10-15 1981-04-09 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum Herstellung einer aus Einkristallschichtteilen und Polykristallschichtteilen bestehenden Halbleiterschicht auf einem Einkristallkörper
CA1296816C (fr) * 1987-02-28 1992-03-03 Kenji Yamagata Methode de fabrication d'un semi-conducteur
US7767627B1 (en) 1994-10-18 2010-08-03 Symyx Solutions, Inc. Combinatorial synthesis of inorganic or composite materials
US5985356A (en) * 1994-10-18 1999-11-16 The Regents Of The University Of California Combinatorial synthesis of novel materials

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE548791A (fr) * 1955-06-20
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten
US2910634A (en) * 1957-05-31 1959-10-27 Ibm Semiconductor device
NL256300A (fr) * 1959-05-28 1900-01-01
US3012902A (en) * 1959-12-08 1961-12-12 Owens Illinois Glass Co Process of reacting a vaporous metal with a glass surface
BE607571A (fr) * 1960-09-09

Also Published As

Publication number Publication date
DE1178518B (de) 1964-09-24
NL283619A (fr)
US3171761A (en) 1965-03-02
GB989890A (en) 1965-04-22
DE1178518C2 (de) 1965-05-26

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