GB755456A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB755456A GB755456A GB11837/54A GB1183754A GB755456A GB 755456 A GB755456 A GB 755456A GB 11837/54 A GB11837/54 A GB 11837/54A GB 1183754 A GB1183754 A GB 1183754A GB 755456 A GB755456 A GB 755456A
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductivity
- type
- regions
- zone
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000463 material Substances 0.000 abstract 4
- 239000000370 acceptor Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
755,456. Semi-conductor devices. RADIO CORPORATION OF AMERICA. April 23, 1954 [May 22, 1953], No. 11837/54. Class 37. A semi-conductor device comprises two regions of one conductivity-type with an intermediate zone of opposite conductivity type having variable conductivity along the line joining the two regions, the region of greatest conductivity being adjacent one of the two regions. Fig. 1 shows a transistor comprising emitter zone 12 and collector zone 16 of P-type material, and a base zone comprising a thinhigh-conductivity portion 18 and a lowerconductivity portion 20 both of N-type material. The base electrode is connected to portion 18. The arrangement provides low base resistance, low emitter input capacitance (due to the short diffusion path provided by the thin portion 18) and relatively high collector breakdown voltage (due to the high resistivity and space charge layer in portion 20). The semiconductor body may be prepared by successively alloying and diffusing donor and acceptor impurities into a layer of material of one conductivity type, or by growing a crystal from a melt the composition of which is modified to form regions of the desired type, or by bombardment with charged particles. Germanium and silicon are given as examples of semi-conductor material; indium, aluminium, gallium, boron or zinc as acceptors and antimony, bismuth, arsenic, selenium, tellurium and phosphorus as donors.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US755456XA | 1953-05-22 | 1953-05-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB755456A true GB755456A (en) | 1956-08-22 |
Family
ID=22126455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB11837/54A Expired GB755456A (en) | 1953-05-22 | 1954-04-23 | Semiconductor devices |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1098372A (en) |
| GB (1) | GB755456A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL107344C (en) * | 1955-03-23 | |||
| US2857527A (en) * | 1955-04-28 | 1958-10-21 | Rca Corp | Semiconductor devices including biased p+p or n+n rectifying barriers |
| DE1073632B (en) * | 1956-06-18 | 1960-01-21 | Radio Corporation Of America, New York, N. Y. (V. St. A.) | Drift transistor with a zone sequence P-N-P or N-P-N and process for its production |
| US2914715A (en) * | 1956-07-02 | 1959-11-24 | Bell Telephone Labor Inc | Semiconductor diode |
| DE1166941B (en) * | 1957-02-07 | 1964-04-02 | Telefunken Patent | Semiconductor component with pn junction |
-
1954
- 1954-04-08 FR FR1098372D patent/FR1098372A/en not_active Expired
- 1954-04-23 GB GB11837/54A patent/GB755456A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1098372A (en) | 1955-07-25 |
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