AT292787B - Verfahren zum Herstellen eines Transistors - Google Patents

Verfahren zum Herstellen eines Transistors

Info

Publication number
AT292787B
AT292787B AT323869A AT323869A AT292787B AT 292787 B AT292787 B AT 292787B AT 323869 A AT323869 A AT 323869A AT 323869 A AT323869 A AT 323869A AT 292787 B AT292787 B AT 292787B
Authority
AT
Austria
Prior art keywords
transistor
manufacturing
Prior art date
Application number
AT323869A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT292787B publication Critical patent/AT292787B/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
AT323869A 1968-04-04 1969-04-02 Verfahren zum Herstellen eines Transistors AT292787B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681764124 DE1764124A1 (de) 1968-04-04 1968-04-04 Verfahren zum Herstellen eines Transistors

Publications (1)

Publication Number Publication Date
AT292787B true AT292787B (de) 1971-09-10

Family

ID=5697864

Family Applications (1)

Application Number Title Priority Date Filing Date
AT323869A AT292787B (de) 1968-04-04 1969-04-02 Verfahren zum Herstellen eines Transistors

Country Status (7)

Country Link
AT (1) AT292787B (de)
CH (1) CH490736A (de)
DE (1) DE1764124A1 (de)
FR (1) FR1598562A (de)
GB (1) GB1231672A (de)
NL (1) NL6903751A (de)
SE (1) SE338108B (de)

Also Published As

Publication number Publication date
FR1598562A (de) 1970-07-06
CH490736A (de) 1970-05-15
DE1764124A1 (de) 1971-05-06
SE338108B (de) 1971-08-30
NL6903751A (de) 1969-10-07
GB1231672A (de) 1971-05-12

Similar Documents

Publication Publication Date Title
DE1938365B2 (de) Verfahren zum herstellen eines transistors
CH505473A (de) Verfahren zum Herstellen einer Halbleitervorrichtung
CH495842A (de) Verfahren zum Herstellen eines Schichtbauteils
DE1803028B2 (de) Verfahren zum herstellen eines feldeffekttransistors
CH498490A (de) Verfahren zum Herstellen eines Halbleiterbauelementes
CH498493A (de) Verfahren zum Herstellen monolithischer Halbleiteranordnungen
AT264596B (de) Verfahren zum Herstellen eines Transistors
CH447393A (de) Verfahren zum Herstellen von Feldeffekttransistoren
AT278093B (de) Verfahren zur Herstellung eines Transistors
AT266041B (de) Verfahren zum Herstellen eines geformten kohlenstoffenthaltenden Gegenstandes
CH516476A (de) Verfahren zum Herstellen eines Kristalls einer Halbleiterverbindung
CH387720A (de) Verfahren zum Herstellen eines thermoelektrischen Bauelementes
CH414572A (de) Verfahren zum Herstellen eines halbleitenden Elements
ATA580771A (de) Verfahren zum behandeln eines bahnfoermigen faservlieses
AT324426B (de) Verfahren zum herstellen eines pnp-silizium-transistors
AT267613B (de) Verfahren zum Herstellen eines Transistors
DE2037589B2 (de) Verfahren zum herstellen eines sperrschicht-feldeffekttransistors
AT292787B (de) Verfahren zum Herstellen eines Transistors
CH414019A (de) Verfahren zum Herstellen eines Halbleiter-Bauelements
CH385349A (de) Verfahren zum Herstellen eines Transistors
CH474857A (de) Verfahren zum Herstellen eines Germanium-Planar-Transistors
AT286361B (de) Verfahren zum herstellen eines diffusionstransistors aus silizium
CH523594A (de) Verfahren zum Herstellen einer Planardiode oder eines Planartransistors
CH481489A (de) Verfahren zur Herstellung eines Transistors
AT312054B (de) Verfahren zum Herstellen eines Silizium-Planartransistors

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee